Improvement of LDMOS MMICs compactness

Abstract

This paper describes an innovative mean of realizing input matching networks for LDMOS MMICs, by using a very compact broadband transformer balun, which is integrated in the input matching network, in the active device gate plane instead of the 50 ohms port. The aim of this technique is to significantly reduce the silicon area, which is induced by the base station market trend of compactness improvement. This is illustrated through the design of a 1.8 GHz to 2.2 GHz MMIC.