3.6 W/mm高功率密度W波段InAlGaN/GaN HEMT MMIC功率放大器

2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR) Pub Date : 1900-01-01 DOI:10.1109/PAWR.2016.7440153

Y. Niida, Y. Kamada, T. Ohki, S. Ozaki, K. Makiyama, Y. Minoura, N. Okamoto, Masaru Sato, K. Joshin, Keiji Watanabe

{"title":"3.6 W/mm高功率密度W波段InAlGaN/GaN HEMT MMIC功率放大器","authors":"Y. Niida, Y. Kamada, T. Ohki, S. Ozaki, K. Makiyama, Y. Minoura, N. Okamoto, Masaru Sato, K. Joshin, Keiji Watanabe","doi":"10.1109/PAWR.2016.7440153","DOIUrl":null,"url":null,"abstract":"We demonstrated a W-band high-power-density MMIC power amplifier with 80 nm InAlGaN/GaN HEMTs. The MMIC consists of two-stage cascade units, each of which has two transistors with the same gate periphery for a high gain and low-loss matching circuit. The MMIC achieved a maximum output power of 1.15 W and maximum PAE of 12.3 % at 86 GHz under CW operation. Its power density reached 3.6 W/mm, representing the highest performance of the W-band GaN HEMT MMIC power amplifier.","PeriodicalId":103290,"journal":{"name":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"48","resultStr":"{\"title\":\"3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier\",\"authors\":\"Y. Niida, Y. Kamada, T. Ohki, S. Ozaki, K. Makiyama, Y. Minoura, N. Okamoto, Masaru Sato, K. Joshin, Keiji Watanabe\",\"doi\":\"10.1109/PAWR.2016.7440153\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrated a W-band high-power-density MMIC power amplifier with 80 nm InAlGaN/GaN HEMTs. The MMIC consists of two-stage cascade units, each of which has two transistors with the same gate periphery for a high gain and low-loss matching circuit. The MMIC achieved a maximum output power of 1.15 W and maximum PAE of 12.3 % at 86 GHz under CW operation. Its power density reached 3.6 W/mm, representing the highest performance of the W-band GaN HEMT MMIC power amplifier.\",\"PeriodicalId\":103290,\"journal\":{\"name\":\"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"48\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PAWR.2016.7440153\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PAWR.2016.7440153","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 48

摘要

我们展示了一个w波段高功率密度的MMIC功率放大器，该功率放大器具有80 nm的InAlGaN/GaN hemt。MMIC由两级级联单元组成，每个级联单元具有两个具有相同栅极外围的晶体管，用于高增益低损耗匹配电路。在连续波工作下，MMIC在86 GHz时的最大输出功率为1.15 W，最大PAE为12.3%。其功率密度达到3.6 W/mm，代表了W波段GaN HEMT MMIC功率放大器的最高性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

3.6 W/mm high power density W-band InAlGaN/GaN HEMT MMIC power amplifier

We demonstrated a W-band high-power-density MMIC power amplifier with 80 nm InAlGaN/GaN HEMTs. The MMIC consists of two-stage cascade units, each of which has two transistors with the same gate periphery for a high gain and low-loss matching circuit. The MMIC achieved a maximum output power of 1.15 W and maximum PAE of 12.3 % at 86 GHz under CW operation. Its power density reached 3.6 W/mm, representing the highest performance of the W-band GaN HEMT MMIC power amplifier.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR)

自引率

0.00%

发文量