Chinese Physics B最新文献

In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits 用于铌超导量子电路的原位沉积抗老化 TiN 盖层

IF 1.7 4区物理与天体物理

Chinese Physics B Pub Date : 2024-09-01 DOI: 10.1088/1674-1056/ad6a3c

Hao-Ran Tao, Lei Du, Liang-Liang Guo, Yong Chen, Hai-Feng Zhang, Xiao-Yan Yang, Guo-Liang Xu, Chi Zhang, Zhi-Long Jia, Peng Duan, Guo-Ping Guo

引用次数: 0

Imaging a force field via an optically levitated nanoparticle array 通过光学悬浮纳米粒子阵列成像力场

IF 1.7 4区物理与天体物理

Chinese Physics B Pub Date : 2024-09-01 DOI: 10.1088/1674-1056/ad6b86

Bihu Lv, Jiandong Zhang, Chuang Li

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Theoretical insights into the structures and fundamental properties of pnictogen nitrides 对氮化镤结构和基本特性的理论见解

IF 1.7 4区物理与天体物理

Chinese Physics B Pub Date : 2024-09-01 DOI: 10.1088/1674-1056/ad6a07

Jingjing Wang, Panlong Kong, Dingmei Zhang, Defang Gao, Zaifu Jiang, Wei Dai

{"title":"Theoretical insights into the structures and fundamental properties of pnictogen nitrides","authors":"Jingjing Wang, Panlong Kong, Dingmei Zhang, Defang Gao, Zaifu Jiang, Wei Dai","doi":"10.1088/1674-1056/ad6a07","DOIUrl":"https://doi.org/10.1088/1674-1056/ad6a07","url":null,"abstract":"Recent experimental advancements reported a chemical reaction between antimony and nitrogen under high temperature and high pressure, yielding crystalline antimony nitride (Sb3N5) with an orthorhombic structure. Motivated by this statement, we calculate the stability, elastic properties, electronic properties and energy density of the <italic toggle=\"yes\">Cmc</italic>21 structure for pnictogen nitrides <italic toggle=\"yes\">X</italic>3N5 (<italic toggle=\"yes\">X</italic> = P, As, Sb, and Bi) using first-principles calculations combined with particle swarm optimization algorithms. Calculations of formation enthalpies, elastic constants and phonon spectra show that P3N5, As3N5 and Sb3N5 are thermodynamically, mechanically and kinetically stable at 35 GPa, whereas Bi3N5 is mechanically and kinetically stable but thermodynamically unstable. The computed electronic density of states shows strong covalent bonding between the N atoms and the phosphorus group atoms in the four compounds, confirmed by the calculated electronic localization function. We also calculate the energy densities for Sb3N5 and find it to be a potentially high-energy-density material.","PeriodicalId":10253,"journal":{"name":"Chinese Physics B","volume":"10 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142209258","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator 硅/硅锗三量子点阵列与微波谐振器的耦合和特性分析

IF 1.7 4区物理与天体物理

Chinese Physics B Pub Date : 2024-09-01 DOI: 10.1088/1674-1056/ad711d

Shun-Li Jiang, Tian-Yi Jiang, Yong-Qiang Xu, Rui Wu, Tian-Yue Hao, Shu-Kun Ye, Ran-Ran Cai, Bao-Chuan Wang, Hai-Ou Li, Gang Cao, Guo-Ping Guo

{"title":"Coupling and characterization of a Si/SiGe triple quantum dot array with a microwave resonator","authors":"Shun-Li Jiang, Tian-Yi Jiang, Yong-Qiang Xu, Rui Wu, Tian-Yue Hao, Shu-Kun Ye, Ran-Ran Cai, Bao-Chuan Wang, Hai-Ou Li, Gang Cao, Guo-Ping Guo","doi":"10.1088/1674-1056/ad711d","DOIUrl":"https://doi.org/10.1088/1674-1056/ad711d","url":null,"abstract":"Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation. To satisfy the connectivity requirements and reduce the lithographic complexity, utilizing the qubit array structure and the circuit quantum electrodynamics (cQED) architecture together is expected to be a feasible scaling scheme. A triple-quantum dot (TQD) coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension scheme. In this article, we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide (CPW) resonator. The TQD can couple to the resonator via the right double-quantum dot (RDQD), which reaches the strong coupling regime with a charge–photon coupling strength of <italic toggle=\"yes\">g</italic>0/(2<italic toggle=\"yes\">π</italic>) = 175 MHz. Moreover, we illustrate the high tunability of the TQD through the characterization of stability diagrams, quadruple points (QPs), and the quantum cellular automata (QCA) process. Our results contribute to fostering the exploration of silicon-based qubit integration.","PeriodicalId":10253,"journal":{"name":"Chinese Physics B","volume":"26 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142209229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Probing nickelate superconductors at atomic scale: A STEM review 在原子尺度上探测镍酸盐超导体：STEM 综述

IF 1.7 4区物理与天体物理

Chinese Physics B Pub Date : 2024-09-01 DOI: 10.1088/1674-1056/ad6a0d

Yihan Lei, Yanghe Wang, Jiahao Song, Jinxin Ge, Dirui Wu, Yingli Zhang, Changjian Li

引用次数: 0

Preparation and magnetic hardening of low Ti content (Sm,Zr)(Fe,Co,Ti)12 magnets by rapid solidification non-equilibrium method 用快速凝固非平衡法制备低钛含量 (Sm,Zr)(Fe,Co,Ti)12磁体并对其进行磁强化

IF 1.7 4区物理与天体物理

Chinese Physics B Pub Date : 2024-09-01 DOI: 10.1088/1674-1056/ad58c4

Xing-Feng Zhang, Li-Bin Liu, Yu-Qing Li, Dong-Tao Zhang, Wei-Qiang Liu, Ming Yue

{"title":"Preparation and magnetic hardening of low Ti content (Sm,Zr)(Fe,Co,Ti)12 magnets by rapid solidification non-equilibrium method","authors":"Xing-Feng Zhang, Li-Bin Liu, Yu-Qing Li, Dong-Tao Zhang, Wei-Qiang Liu, Ming Yue","doi":"10.1088/1674-1056/ad58c4","DOIUrl":"https://doi.org/10.1088/1674-1056/ad58c4","url":null,"abstract":"The Sm–Zr–Fe–Co–Ti quinary-alloys with ThMn12 structure has attracted wide attention for ultra-high intrinsic magnetic properties, showing potentiality to be developed into rare-earth permanent magnets. The Ti element in alloys is crucial for phase stability and magnetic properties, and lower Ti content can increase intrinsic magnetic properties but reduce phase stability. In this study, the 1:12 single-phase melt-spun ribbons with low Ti content was successfully prepared using a rapid solidification non-equilibrium method for the Sm1.1Zr0.2Fe9.2Co2.3Ti0.5 quinary-alloy. However, this non-equilibrium ribbon did not achieve good magnetic hardening due to the uneven microstructure and microstrain. Then, annealing was carried out to eliminate micro-strain and homogenize microstructure, therefore, remanence and coercivity were significantly improved even the precipitation of a small amount of <italic toggle=\"yes\">α</italic>-Fe phase which were not conducive to coercivity. The remanence of 86.1 emu/g and coercivity of 151 kA/m was achieved when annealing at 850 °C for 45 min. After hot pressing, under the action of high temperature and pressure, a small portion of ThMn12 phases in the magnet decompose into Sm-rich phases and <italic toggle=\"yes\">α</italic>-Fe, while remanence of 4.02 kGs (1 Gs = 10−4 T), and coercivity of 1.12 kOe (1 Oe = 79.5775 A⋅m−1) were still acquired. Our findings can provide reference for exploring practical permanent magnets made of 1:12 type quinary-alloys.","PeriodicalId":10253,"journal":{"name":"Chinese Physics B","volume":"9 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142209233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum confinement of carriers in the type-I quantum wells structure I 型量子阱结构中载流子的量子约束

IF 1.7 4区物理与天体物理

Chinese Physics B Pub Date : 2024-09-01 DOI: 10.1088/1674-1056/ad5d99

Xinxin Li, Zhen Deng, Yang Jiang, Chunhua Du, Haiqiang Jia, Wenxin Wang, Hong Chen

{"title":"Quantum confinement of carriers in the type-I quantum wells structure","authors":"Xinxin Li, Zhen Deng, Yang Jiang, Chunhua Du, Haiqiang Jia, Wenxin Wang, Hong Chen","doi":"10.1088/1674-1056/ad5d99","DOIUrl":"https://doi.org/10.1088/1674-1056/ad5d99","url":null,"abstract":"Quantum confinement is recognized to be an inherent property in low-dimensional structures. Traditionally, it is believed that the carriers trapped within the well cannot escape due to the discrete energy levels. However, our previous research has revealed efficient carrier escape in low-dimensional structures, contradicting this conventional understanding. In this study, we review the energy band structure of quantum wells along the growth direction considering it as a superposition of the bulk material dispersion and quantization energy dispersion resulting from the quantum confinement across the whole Brillouin zone. By accounting for all wave vectors, we obtain a certain distribution of carrier energy at each quantized energy level, giving rise to the energy subbands. These results enable carriers to escape from the well under the influence of an electric field. Additionally, we have compiled a comprehensive summary of various energy band scenarios in quantum well structures relevant to carrier transport. Such a new interpretation holds significant value in deepening our comprehension of low-dimensional energy bands, discovering new physical phenomena, and designing novel devices with superior performance.","PeriodicalId":10253,"journal":{"name":"Chinese Physics B","volume":"42 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142209232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A quantum-enhanced magnetometer using a single high-spin nucleus in silicon 利用硅中单个高自旋原子核的量子增强磁力计

IF 1.7 4区物理与天体物理

Chinese Physics B Pub Date : 2024-08-31 DOI: 10.1088/1674-1056/ad5a75

Tao Xin, 涛辛, Ke Zhang, 科张, Jun Li and 俊李

引用次数: 0

Different topological phase transitions in the Su–Schrieffer–Heeger model under different disorder structures 不同无序结构下苏-施里弗-希格模型的不同拓扑相变

IF 1.7 4区物理与天体物理

Chinese Physics B Pub Date : 2024-08-01 DOI: 10.1088/1674-1056/ad59fb

Yan Gu, Zhanpeng Lu

引用次数: 0

Current-perpendicular-to-plane transport properties of 2D ferromagnetic material CrTe2 二维铁磁材料 CrTe2 的电流垂直于平面传输特性

IF 1.7 4区物理与天体物理

Chinese Physics B Pub Date : 2024-08-01 DOI: 10.1088/1674-1056/ad5af1

Jin Wang, Yu Liu, Taikun Wang, Yongkang Xu, Shuanghai Wang, Kun He, Yafeng Deng, Pengfei Yan, Liang He

{"title":"Current-perpendicular-to-plane transport properties of 2D ferromagnetic material CrTe2","authors":"Jin Wang, Yu Liu, Taikun Wang, Yongkang Xu, Shuanghai Wang, Kun He, Yafeng Deng, Pengfei Yan, Liang He","doi":"10.1088/1674-1056/ad5af1","DOIUrl":"https://doi.org/10.1088/1674-1056/ad5af1","url":null,"abstract":"Heterostructures of van der Waals (vdW) ferromagnetic materials have become a focal point in research of low-dimensional spintronic devices. The current direction in spin valves is commonly perpendicular to the plane (CPP). However, the transport properties of the CPP mode remain largely unexplored. In this work, current-in-plane (CIP) mode and CPP mode for CrTe2 thin films are carefully studied. The temperature-dependent longitudinal resistance transitions from metallic (CIP) to semiconductor behavior (CPP), with the electrical resistivity of CPP increased by five orders of magnitude. More importantly, the transport properties of the CPP can be categorized into a single-gap tunneling-through model with the activation energy (<italic toggle=\"yes\">E</italic>a) of ∼ 1.34 meV/gap at 300–150 K, the variable range hopping model with a linear negative magnetoresistance at 150–20 K, and weak localization region with a nonlinear magnetic resistance below 20 K. This study explores the vertical transport in CrTe2 materials for the first time, contributing to understand its unique properties and to pave the way for its potential in spin valve devices.","PeriodicalId":10253,"journal":{"name":"Chinese Physics B","volume":"28 1","pages":""},"PeriodicalIF":1.7,"publicationDate":"2024-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142209300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0