Hao-Ran Tao, Lei Du, Liang-Liang Guo, Yong Chen, Hai-Feng Zhang, Xiao-Yan Yang, Guo-Liang Xu, Chi Zhang, Zhi-Long Jia, Peng Duan, Guo-Ping Guo
{"title":"用于铌超导量子电路的原位沉积抗老化 TiN 盖层","authors":"Hao-Ran Tao, Lei Du, Liang-Liang Guo, Yong Chen, Hai-Feng Zhang, Xiao-Yan Yang, Guo-Liang Xu, Chi Zhang, Zhi-Long Jia, Peng Duan, Guo-Ping Guo","doi":"10.1088/1674-1056/ad6a3c","DOIUrl":null,"url":null,"abstract":"The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface, where Nb<sub>2</sub>O<sub>5</sub> is considered the main loss source. Here, we suppress the formation of native oxides by <italic toggle=\"yes\">in-situ</italic> deposition of a TiN capping layer on the Nb film. With TiN capping layers, no Nb<sub>2</sub>O<sub>5</sub> forms on the surface of the Nb film. The quality factor <italic toggle=\"yes\">Q</italic><sub>i</sub> of the Nb resonator increases from 5.6 × 10<sup>5</sup> to 7.9 × 10<sup>5</sup> at low input power and from 6.8 × 10<sup>6</sup> to 1.1 × 10<sup>7</sup> at high input power. Furthermore, the TiN capping layer also shows good aging resistance in Nb resonator devices, with no significant performance fluctuations after one month of aging. These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.","PeriodicalId":10253,"journal":{"name":"Chinese Physics B","volume":"46 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits\",\"authors\":\"Hao-Ran Tao, Lei Du, Liang-Liang Guo, Yong Chen, Hai-Feng Zhang, Xiao-Yan Yang, Guo-Liang Xu, Chi Zhang, Zhi-Long Jia, Peng Duan, Guo-Ping Guo\",\"doi\":\"10.1088/1674-1056/ad6a3c\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface, where Nb<sub>2</sub>O<sub>5</sub> is considered the main loss source. Here, we suppress the formation of native oxides by <italic toggle=\\\"yes\\\">in-situ</italic> deposition of a TiN capping layer on the Nb film. With TiN capping layers, no Nb<sub>2</sub>O<sub>5</sub> forms on the surface of the Nb film. The quality factor <italic toggle=\\\"yes\\\">Q</italic><sub>i</sub> of the Nb resonator increases from 5.6 × 10<sup>5</sup> to 7.9 × 10<sup>5</sup> at low input power and from 6.8 × 10<sup>6</sup> to 1.1 × 10<sup>7</sup> at high input power. Furthermore, the TiN capping layer also shows good aging resistance in Nb resonator devices, with no significant performance fluctuations after one month of aging. These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.\",\"PeriodicalId\":10253,\"journal\":{\"name\":\"Chinese Physics B\",\"volume\":\"46 1\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chinese Physics B\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1088/1674-1056/ad6a3c\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Physics B","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/1674-1056/ad6a3c","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
铌超导量子器件的性能主要受限于金属-空气界面的介电损耗,其中 Nb2O5 被认为是主要的损耗源。在这里,我们通过在铌薄膜上原位沉积 TiN 盖层来抑制原生氧化物的形成。有了 TiN 盖层,铌薄膜表面就不会形成 Nb2O5。在低输入功率时,铌谐振器的品质因数 Qi 从 5.6 × 105 提高到 7.9 × 105,在高输入功率时,品质因数 Qi 从 6.8 × 106 提高到 1.1 × 107。此外,TiN 盖层在铌谐振器器件中也表现出良好的抗老化性,老化一个月后性能没有明显波动。这些发现凸显了 TiN 盖层在提高铌超导量子器件的性能和寿命方面的有效性。
In-situ deposited anti-aging TiN capping layer for Nb superconducting quantum circuits
The performance of Nb superconducting quantum devices is predominantly limited by dielectric loss at the metal–air interface, where Nb2O5 is considered the main loss source. Here, we suppress the formation of native oxides by in-situ deposition of a TiN capping layer on the Nb film. With TiN capping layers, no Nb2O5 forms on the surface of the Nb film. The quality factor Qi of the Nb resonator increases from 5.6 × 105 to 7.9 × 105 at low input power and from 6.8 × 106 to 1.1 × 107 at high input power. Furthermore, the TiN capping layer also shows good aging resistance in Nb resonator devices, with no significant performance fluctuations after one month of aging. These findings highlight the effectiveness of TiN capping layers in enhancing the performance and longevity of Nb superconducting quantum devices.
期刊介绍:
Chinese Physics B is an international journal covering the latest developments and achievements in all branches of physics worldwide (with the exception of nuclear physics and physics of elementary particles and fields, which is covered by Chinese Physics C). It publishes original research papers and rapid communications reflecting creative and innovative achievements across the field of physics, as well as review articles covering important accomplishments in the frontiers of physics.
Subject coverage includes:
Condensed matter physics and the physics of materials
Atomic, molecular and optical physics
Statistical, nonlinear and soft matter physics
Plasma physics
Interdisciplinary physics.