Electron最新文献_第6页

Synthesis and Structure–Activity Relationship of Porous Coordination Polymers and Their Composites as Photocatalysts: Environmental Remediation 多孔配位聚合物及其复合光催化剂的合成及构效关系：环境修复

Electron Pub Date : 2025-05-16 DOI: 10.1002/elt2.70002

Wenting Li, Wei Kang, Ting Zhou, Nina Wu, Huan Pang

引用次数: 0

Passive Transmissive Reconfigurable Intelligent Surface 被动传输可重构智能表面

Electron Pub Date : 2025-04-23 DOI: 10.1002/elt2.70003

Xiangming Wu, Chong He, Ivan D. Rukhlenko, Qingqing Wu, Weiren Zhu

引用次数: 0

Sodium Chloride-Assisted Crystalline Graphitic Carbon Nitride for Efficient Photocatalytic Hydrogen Evolution 用于高效光催化析氢的氯化钠辅助结晶石墨氮化碳

Electron Pub Date : 2025-03-15 DOI: 10.1002/elt2.70000

Xueze Chu, C. I. Sathish, Jae-Hun Yang, Wei Li, Dongchen Qi, Xinwei Guan, Xiaojiang Yu, Mark B. H. Breese, Liang Qiao, Jiabao Yi

{"title":"Sodium Chloride-Assisted Crystalline Graphitic Carbon Nitride for Efficient Photocatalytic Hydrogen Evolution","authors":"Xueze Chu, C. I. Sathish, Jae-Hun Yang, Wei Li, Dongchen Qi, Xinwei Guan, Xiaojiang Yu, Mark B. H. Breese, Liang Qiao, Jiabao Yi","doi":"10.1002/elt2.70000","DOIUrl":"https://doi.org/10.1002/elt2.70000","url":null,"abstract":"Graphitic carbon nitride (g-C3N4) has attracted enormous attention as a photocatalyst due to its appropriate bandgap, high chemical stability, and visible light response. However, it is still challenging to synthesize highly crystalline g-C3N4, favoring the separation of photogenerated electron–hole pairs and promoting improved photocatalytic activity. Herein, we report a novel approach to achieve highly crystalline g-C3N4 by simply pressing sodium chloride and carbon nitride into a pellet followed by heat treatment, which is different from conventional molten salt methods. The resulting g-C3N4 has an optimum band structure that benefits enhanced light absorption and charge separation efficiency. The intimate contact between sodium chloride and carbon nitride in the pressed pellet facilitates the diffusion of sodium ions and increases the material's resistance to high annealing temperatures, leading to improved crystallinity. The photocurrent response of this highly crystalline material under visible light irradiation is approximately four times higher than that of its bulk counterpart, resulting in a hydrogen production rate of up to 650 μmol g−1 h−1 (10% TEOA). This work paves a new path in designing novel carbon nitrides with enhanced photoelectrochemical and photocatalytic performance.","PeriodicalId":100403,"journal":{"name":"Electron","volume":"3 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2025-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.70000","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144220173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cover Image, Volume 3, Number 1, February 封面图片，第3卷，第1期，二月

Electron Pub Date : 2025-03-04 DOI: 10.1002/elt2.70001

Xianliang Mai, Qundao Xu, Zhe Yang, Huan Wang, Yongpeng Liu, Yinghua Shen, Hengyi Hu, Meng Xu, Zhongrui Wang, Hao Tong, Chengliang Wang, Xiangshui Miao, Ming Xu

引用次数: 0

Nanowire-Based Flexible Sensors for Wearable Electronics, Brain–Computer Interfaces, and Artificial Skins 用于可穿戴电子产品、脑机接口和人造皮肤的纳米线柔性传感器

Electron Pub Date : 2025-02-22 DOI: 10.1002/elt2.77

Xiaopan Song, Yang Gu, Sheng Wang, Junzhuan Wang, Linwei Yu

{"title":"Nanowire-Based Flexible Sensors for Wearable Electronics, Brain–Computer Interfaces, and Artificial Skins","authors":"Xiaopan Song, Yang Gu, Sheng Wang, Junzhuan Wang, Linwei Yu","doi":"10.1002/elt2.77","DOIUrl":"https://doi.org/10.1002/elt2.77","url":null,"abstract":"Flexible electronic devices with compliant mechanical deformability and electrical reliability have been a focal point of research over the past decade, particularly in the fields of wearable devices, brain–computer interfaces (BCIs), and electronic skins. These emerging applications impose stringent requirements on flexible sensors, necessitating not only their ability to withstand dynamic strains and conform to irregular surfaces but also to ensure long-term stable monitoring. To meet these demands, one-dimensional nanowires, with high aspect ratios, large surface-to-volume ratios, and programmable geometric engineering, are widely regarded as ideal candidates for constructing high-performance flexible sensors. Various innovative assembly techniques have enabled the effective integration of these nanowires with flexible substrates. More excitingly, semiconductor nanowires, prepared through low-cost and efficient catalytic growth methods, have been successfully employed in the fabrication of highly flexible and stretchable nanoprobes for intracellular sensing. Additionally, nanowire arrays can be deployed on the cerebral cortex to record and analyze neural activity, opening new avenues for the treatment of neurological disorders. This review systematically examines recent advancements in nanowire-based flexible sensing technologies applied to wearable electronics, BCIs, and electronic skins, highlighting key design principles, operational mechanisms, and technological milestones achieved through growth, assembly, and transfer processes. These developments collectively advance high-performance health monitoring, deepen our understanding of neural activities, and facilitate the creation of novel, flexible, and stretchable electronic skins. Finally, we also present a summary and perspectives on the current challenges and future opportunities for nanowire-based flexible sensors.","PeriodicalId":100403,"journal":{"name":"Electron","volume":"3 2","pages":""},"PeriodicalIF":0.0,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.77","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144219956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cover Image, Volume 2, Number 4, November 2024 封面图片，第二卷，第4期，2024年11月

Electron Pub Date : 2024-11-30 DOI: 10.1002/elt2.75

Yang Li, Xukang Han, Jiaying Zhu, Yuhao Feng, Panpan Liu, Xiao Chen

引用次数: 0

Cover Image, Volume 2, Number 4, November 2024 封面图片，第二卷，第4期，2024年11月

Electron Pub Date : 2024-11-30 DOI: 10.1002/elt2.74

Keming Cheng, Kai Shen, Chuang Li, Daqian Guo, Hao Wang, Jiang Wu

引用次数: 0

Design of long-wavelength infrared InAs/InAsSb type-II superlattice avalanche photodetector with stepped grading layer 阶梯式分级长波红外InAs/InAsSb型超晶格雪崩光电探测器的设计

Electron Pub Date : 2024-11-25 DOI: 10.1002/elt2.73

Keming Cheng, Kai Shen, Chuang Li, Daqian Guo, Hao Wang, Jiang Wu

{"title":"Design of long-wavelength infrared InAs/InAsSb type-II superlattice avalanche photodetector with stepped grading layer","authors":"Keming Cheng, Kai Shen, Chuang Li, Daqian Guo, Hao Wang, Jiang Wu","doi":"10.1002/elt2.73","DOIUrl":"https://doi.org/10.1002/elt2.73","url":null,"abstract":"Weak response in long-wavelength infrared (LWIR) detection has long been a perennial concern, significantly limiting the reliability of applications. Avalanche photodetectors (APDs) offer excellent responsivity but are plagued by high dark current during the multiplication process. Here, we propose a high-performance type-II superlattices (T2SLs) LWIR APD to address these issues. The low Auger recombination rate of the InAs/InAsSb T2SLs absorption layer is exploited to reduce the dark current initially. AlAsSb with a low k value is employed as the multiplication layer to suppress device noise while maintaining sufficient gain. To facilitate carrier transport, the conduction band discontinuity is optimized by inserting an InAs/AlSb T2SLs stepped grading layer between the absorption and multiplication layers. As a result, the device exhibits excellent photoresponse at 8.4 μm at 100 K and maintains a low dark current density of 5.48 × 10−2 A/cm2. Specifically, it achieves a maximum gain of 366, a responsivity of 650 A/W, and a quantum efficiency of 26.28% under breakdown voltage. This design offers a promising solution for the advancement of LWIR detection.","PeriodicalId":100403,"journal":{"name":"Electron","volume":"2 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.73","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Recent progress on heteroepitaxial growth of single crystal diamond films 单晶金刚石薄膜异质外延生长研究进展

Electron Pub Date : 2024-11-07 DOI: 10.1002/elt2.70

Vedaste Uwihoreye, Yushuo Hu, Guangyu Cao, Xing Zhang, Freddy E. Oropeza, Kelvin H. L. Zhang

引用次数: 0

Strategies for improving the performance of practical Li-CO2 battery 提高实用锂-二氧化碳电池性能的策略

Electron Pub Date : 2024-11-07 DOI: 10.1002/elt2.71

Kaige Zhu, Shuai Yin, Feiyue Zhai, Dezhi Yan, Diyin Tang, Yalan Xing, Shichao Zhang

引用次数: 0