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Cover Image, Volume 3, Number 1, February 封面图片，第3卷，第1期，二月
Electron Pub Date : 2025-03-04 DOI: 10.1002/elt2.70001
Xianliang Mai, Qundao Xu, Zhe Yang, Huan Wang, Yongpeng Liu, Yinghua Shen, Hengyi Hu, Meng Xu, Zhongrui Wang, Hao Tong, Chengliang Wang, Xiangshui Miao, Ming Xu
{"title":"Cover Image, Volume 3, Number 1, February","authors":"Xianliang Mai,&nbsp;Qundao Xu,&nbsp;Zhe Yang,&nbsp;Huan Wang,&nbsp;Yongpeng Liu,&nbsp;Yinghua Shen,&nbsp;Hengyi Hu,&nbsp;Meng Xu,&nbsp;Zhongrui Wang,&nbsp;Hao Tong,&nbsp;Chengliang Wang,&nbsp;Xiangshui Miao,&nbsp;Ming Xu","doi":"10.1002/elt2.70001","DOIUrl":"https://doi.org/10.1002/elt2.70001","url":null,"abstract":"<p>The chalcogenide-based ovonic threshold switching (OTS) device, renowned for its swift and reliable attributes, emerges as an indispensable component in memory chips and neuromorphic computing architectures. Nevertheless, the functional material is prone to glass relaxation, which engenders performance deterioration and threshold switching voltage variability over multiple switching cycles. In this cover image (DOI: 10.1002/elt2.46), the authors proposed a simple binary OTS device to address this issue. A comprehensive exploration via first-principles calculations has unveiled the fundamental mechanisms underpinning the material’s robust performance.\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.70001","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143535895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cover Image, Volume 2, Number 4, November 2024 封面图片，第二卷，第4期，2024年11月
Electron Pub Date : 2024-11-30 DOI: 10.1002/elt2.75
Yang Li, Xukang Han, Jiaying Zhu, Yuhao Feng, Panpan Liu, Xiao Chen
{"title":"Cover Image, Volume 2, Number 4, November 2024","authors":"Yang Li,&nbsp;Xukang Han,&nbsp;Jiaying Zhu,&nbsp;Yuhao Feng,&nbsp;Panpan Liu,&nbsp;Xiao Chen","doi":"10.1002/elt2.75","DOIUrl":"https://doi.org/10.1002/elt2.75","url":null,"abstract":"<p>The cover image (DOI: 10.1002/elt2.56) depicts MoS2-based composite phase change materials that integrate thermal storage, thermal conduction, and microwave absorption functions. With an alchemy furnace serving as the overall backdrop, advanced multifunctional nanoflower-like composite materials are utilized for miniaturized and integrated electronic devices, simultaneously addressing issues of electromagnetic interference, heat dissipation, and transient thermal shock.\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"2 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.75","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cover Image, Volume 2, Number 4, November 2024 封面图片，第二卷，第4期，2024年11月
Electron Pub Date : 2024-11-30 DOI: 10.1002/elt2.74
Keming Cheng, Kai Shen, Chuang Li, Daqian Guo, Hao Wang, Jiang Wu
{"title":"Cover Image, Volume 2, Number 4, November 2024","authors":"Keming Cheng,&nbsp;Kai Shen,&nbsp;Chuang Li,&nbsp;Daqian Guo,&nbsp;Hao Wang,&nbsp;Jiang Wu","doi":"10.1002/elt2.74","DOIUrl":"https://doi.org/10.1002/elt2.74","url":null,"abstract":"<p>Long wave infrared (LWIR) detectors have significant advantages in military and civilian detection of low light targets. This article (DOI: 10.1002/elt2.73) proposes a high-performance avalanche photodetector (APD) for LWIR detection by integrating band engineering with the unique properties of superlattice materials. By optimizing device structure and materials, enhanced responsivity and gain have been achieved, advancing the development of space-based infrared systems and deep space exploration.\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"2 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.74","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of long-wavelength infrared InAs/InAsSb type-II superlattice avalanche photodetector with stepped grading layer 阶梯式分级长波红外InAs/InAsSb型超晶格雪崩光电探测器的设计
Electron Pub Date : 2024-11-25 DOI: 10.1002/elt2.73
Keming Cheng, Kai Shen, Chuang Li, Daqian Guo, Hao Wang, Jiang Wu
{"title":"Design of long-wavelength infrared InAs/InAsSb type-II superlattice avalanche photodetector with stepped grading layer","authors":"Keming Cheng,&nbsp;Kai Shen,&nbsp;Chuang Li,&nbsp;Daqian Guo,&nbsp;Hao Wang,&nbsp;Jiang Wu","doi":"10.1002/elt2.73","DOIUrl":"https://doi.org/10.1002/elt2.73","url":null,"abstract":"<p>Weak response in long-wavelength infrared (LWIR) detection has long been a perennial concern, significantly limiting the reliability of applications. Avalanche photodetectors (APDs) offer excellent responsivity but are plagued by high dark current during the multiplication process. Here, we propose a high-performance type-II superlattices (T2SLs) LWIR APD to address these issues. The low Auger recombination rate of the InAs/InAsSb T2SLs absorption layer is exploited to reduce the dark current initially. AlAsSb with a low <i>k</i> value is employed as the multiplication layer to suppress device noise while maintaining sufficient gain. To facilitate carrier transport, the conduction band discontinuity is optimized by inserting an InAs/AlSb T2SLs stepped grading layer between the absorption and multiplication layers. As a result, the device exhibits excellent photoresponse at 8.4 μm at 100 K and maintains a low dark current density of 5.48 × 10<sup>−2</sup> A/cm<sup>2</sup>. Specifically, it achieves a maximum gain of 366, a responsivity of 650 A/W, and a quantum efficiency of 26.28% under breakdown voltage. This design offers a promising solution for the advancement of LWIR detection.</p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"2 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-11-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.73","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Recent progress on heteroepitaxial growth of single crystal diamond films 单晶金刚石薄膜异质外延生长研究进展
Electron Pub Date : 2024-11-07 DOI: 10.1002/elt2.70
Vedaste Uwihoreye, Yushuo Hu, Guangyu Cao, Xing Zhang, Freddy E. Oropeza, Kelvin H. L. Zhang
{"title":"Recent progress on heteroepitaxial growth of single crystal diamond films","authors":"Vedaste Uwihoreye,&nbsp;Yushuo Hu,&nbsp;Guangyu Cao,&nbsp;Xing Zhang,&nbsp;Freddy E. Oropeza,&nbsp;Kelvin H. L. Zhang","doi":"10.1002/elt2.70","DOIUrl":"https://doi.org/10.1002/elt2.70","url":null,"abstract":"<p>Diamond is an ultimate semiconductor with exceptional physical and chemical properties, such as an ultra-wide bandgap, excellent carrier mobility, extreme thermal conductivity, and stability, making it highly desirable for various applications including power electronics, sensors, and optoelectronic devices. However, the challenge lies in growing the large-size and high-quality single-crystal diamond films, which are crucial for realizing the full potential of this wonder material. Heteroepitaxial growth has emerged as a promising approach to achieve single-crystal diamond wafers with large sizes of up to 3 inches and controlled electrical properties. This review provides an overview of the advancements in diamond heteroepitaxy using microwave plasma-assisted chemical vapor deposition, including the mechanism of heteroepitaxial growth, selection of substrates, film optimization, chemistry of defects, and doping. Moreover, recent progress on the device applications and perspectives is also discussed.</p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"2 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.70","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strategies for improving the performance of practical Li-CO2 battery 提高实用锂-二氧化碳电池性能的策略
Electron Pub Date : 2024-11-07 DOI: 10.1002/elt2.71
Kaige Zhu, Shuai Yin, Feiyue Zhai, Dezhi Yan, Diyin Tang, Yalan Xing, Shichao Zhang
{"title":"Strategies for improving the performance of practical Li-CO2 battery","authors":"Kaige Zhu,&nbsp;Shuai Yin,&nbsp;Feiyue Zhai,&nbsp;Dezhi Yan,&nbsp;Diyin Tang,&nbsp;Yalan Xing,&nbsp;Shichao Zhang","doi":"10.1002/elt2.71","DOIUrl":"https://doi.org/10.1002/elt2.71","url":null,"abstract":"<p>The Li-CO<sub>2</sub> battery represented an enticing energy storage/output system characterized by its high-specific energy capacity and simultaneously achieving CO<sub>2</sub> fixation and conversion, which held significant promise in mitigating global warming and advancing toward carbon neutrality. Nonetheless, the current Li-CO<sub>2</sub> battery's practical capacity and energy efficiency lagged behind traditional lithium-ion battery considerably, posing great challenges for practical applications and commercialization. This review comprehensively summarized recent advancements and prospective strategies aimed at enhancing the effectiveness of practical Li-CO<sub>2</sub> battery, encompassing insights into the cycling reaction mechanisms, anode electrode protection, key interface optimization, electrolyte design, and cathode catalyst innovations. Furthermore, insights into the prospects and key obstacles that lay ahead in advancing the Li-CO<sub>2</sub> battery toward practical applications were provided.</p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.71","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143533411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Functional organic 7,7,8,8-tetracyanoquinodimethane artificial layers for the dendrite suppressed lithium metal anodes 枝晶抑制锂金属阳极的功能有机7,7,8,8-四氰喹二甲烷人工层
Electron Pub Date : 2024-10-26 DOI: 10.1002/elt2.72
Qing Liu, Zhiyong Zheng, Peixun Xiong, Chun Huang, Shengyang Huang, Baohuai Zhao, Yongan Wu, Yi Zhang, Bo-Kyong Kim, Xu Yu, Ho Seok Park
{"title":"Functional organic 7,7,8,8-tetracyanoquinodimethane artificial layers for the dendrite suppressed lithium metal anodes","authors":"Qing Liu,&nbsp;Zhiyong Zheng,&nbsp;Peixun Xiong,&nbsp;Chun Huang,&nbsp;Shengyang Huang,&nbsp;Baohuai Zhao,&nbsp;Yongan Wu,&nbsp;Yi Zhang,&nbsp;Bo-Kyong Kim,&nbsp;Xu Yu,&nbsp;Ho Seok Park","doi":"10.1002/elt2.72","DOIUrl":"https://doi.org/10.1002/elt2.72","url":null,"abstract":"<p>The large-scale industrialization of lithium metal (Li), as a potential anode for a high energy density energy storage system, has been hindered by dendrite growth. The construction of an artificial solid electrolyte interphase layer featuring high ionic and low electronic conductivity has been verified to be a high-performance strategy to confine the dendrite growth and promote the Li anode stability. Therefore, a functional organic protective layer is homogeneously deposited on the Li anode surface via an in situ chemical reaction between tetracyanoquinodimethane (TCNQ) and Li. The as-synthesized Li<sub>n</sub>-TCNQ organic film could efficiently trap non-uniform Li deposition and restrain dendrite propagation. Particularly, an asymmetric M-TCNQ-Li|Cu cell with the Li<sub>n</sub>-TCNQ layer breezed through a high Coulombic efficiency of 91.15% after 100 cycles at 1.0 mA cm<sup>−2</sup>. The M-TCNQ-Li|NCM622 cell delivered a high capacity of 143.40 mAh g<sup>−1</sup> at 0.2 C and maintained a good cyclic stability of 110.44 mAh g<sup>−1</sup> after 160 cycles. The analysis results of spectroscopic tests further demonstrate that the Li<sub>n</sub>-TCNQ with the enhanced absorption energy is conducive to lithiophilicity and decreases the overpotential of Li deposition.</p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"2 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.72","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142753987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Assessing electronic structure modulation strategies toward the development of low-cost oxygen evolution reaction catalysts 开发低成本析氧反应催化剂的电子结构调制策略评估
Electron Pub Date : 2024-10-24 DOI: 10.1002/elt2.65
Zhen Zhang, Shaobo Han, Cheng Li, Chao Cai, Meng Danny Gu
{"title":"Assessing electronic structure modulation strategies toward the development of low-cost oxygen evolution reaction catalysts","authors":"Zhen Zhang,&nbsp;Shaobo Han,&nbsp;Cheng Li,&nbsp;Chao Cai,&nbsp;Meng Danny Gu","doi":"10.1002/elt2.65","DOIUrl":"https://doi.org/10.1002/elt2.65","url":null,"abstract":"<p>Oxygen evolution reactions (OER) are critical to electrochemical synthesis reactions, including hydrogen production and organic hydrogenation. However, the high cost of existing OER catalysts (primarily Ir/Ru and its derived oxides) limits their practical application for electrochemical synthesis. To develop a low-cost, high-efficiency alternative, we need a deeper understanding of both the mechanisms that drive OER and the relationship between the catalyst's electronic structure and active sites. Here, we summarized recent developments of catalysts, especially focusing on the electronic structure modulation strategies and their subsequent activity enhancement. Most importantly, we pointed out the study directions for further work.</p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"2 4","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.65","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142754142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Impact of neutron radiation induced defects on the surge current robustness of silicon carbide P-intrinsic-N diodes 中子辐射诱导缺陷对碳化硅p -本征n二极管浪涌电流稳健性的影响
Electron Pub Date : 2024-10-11 DOI: 10.1002/elt2.64
Haoshu Tan, Lin Zhang, Zhiqiang Li, Jun Tao Li, Peng Dong
{"title":"Impact of neutron radiation induced defects on the surge current robustness of silicon carbide P-intrinsic-N diodes","authors":"Haoshu Tan,&nbsp;Lin Zhang,&nbsp;Zhiqiang Li,&nbsp;Jun Tao Li,&nbsp;Peng Dong","doi":"10.1002/elt2.64","DOIUrl":"https://doi.org/10.1002/elt2.64","url":null,"abstract":"<p>Surge current (SC) capability is one of the main aspects of reliability for silicon carbide (SiC) power devices. In this work, the influences of neutron radiation-induced defects on the SC capability and reliability of SiC P-intrinsic-N (PiN) diodes were comprehensively investigated. It was found that the surge capability of the diodes can be deteriorated even under the slightly enhanced formation of carbon-vacancy-related Z<sub>1/2</sub> and EH<sub>6/7</sub> defects introduced by neutron irradiation. Surprisingly, it was found that the forward voltage (<i>V</i><sub>F</sub>) decreases with the increased SC and the stress cycles in the irradiated diodes, which is usually found to increase under the SC tests and attributed to the bipolar degradation (BPD). By using technology computer-aided design simulation and deep-level transient spectroscopy characterization, it was found that the significant self-heating during surge stress leads to the annealing effect on the Z<sub>1/2</sub> defects through the promoted recombination with the nearest and second neighbor carbon interstitials injected by irradiation, which thus plays a dominant role in the decrease of <i>V</i><sub>F</sub> over the BPD.</p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.64","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143535852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cover Image, Volume 2, Number 3, August 2024 封面图片，第 2 卷第 3 号，2024 年 8 月
Electron Pub Date : 2024-08-30 DOI: 10.1002/elt2.66
Hui Xie, Jianyou Yu, Yuchen Fang, Zhijun Wang, Shihe Yang, Zheng Xing
{"title":"Cover Image, Volume 2, Number 3, August 2024","authors":"Hui Xie,&nbsp;Jianyou Yu,&nbsp;Yuchen Fang,&nbsp;Zhijun Wang,&nbsp;Shihe Yang,&nbsp;Zheng Xing","doi":"10.1002/elt2.66","DOIUrl":"https://doi.org/10.1002/elt2.66","url":null,"abstract":"<p>Photocathodic protection has emerged as an eco-friendly and energy-saving technology for alleviating the corrosion of underwater metallic infrastructures. In a photocathodic protection system built from single-domain ferroelectric PbTiO<sub>3</sub> nanoplates, the aligned depolarization fields of individual nanoplates provide a “highway” for the photogenerated charges so that the electrons are guided to unidirectionally flow to the protected metal. The cover image (DOI: 10.1002/elt2.51) depicts the schematic diagram of the well-aligned depolarization fields of the PbTiO<sub>3</sub> nanoplates, the induced directional transport “highway” of electrons and holes, and the photogenerated electrons traveling to metallic structures (such as bridges and ships) for anti-corrosion purposes.\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"2 3","pages":""},"PeriodicalIF":0.0,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.66","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142100261","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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