{"title":"Cover Image, Volume 3, Number 3, August","authors":"Shenglong Wei, Xiuheng Zhou, Xiaofeng Chen, Rongkun Chen, Feifan Ma, Yihong Chen, Vedaste Uwihoreye, Freddy E. Oropeza, Yongxing Liu, Likai Xun, Haihui Xin, Kaiyi Wu, Xitian Liu, Yongzhou Zhao, Kelvin H. L. Zhang","doi":"10.1002/elt2.70018","DOIUrl":null,"url":null,"abstract":"<p>Gallium nitride (GaN)-based micro- or mini- light-emitting diodes (micro-LEDs and mini-LEDs) have emerged as promising candidate for next-generation display technologies due to their high resolution, exceptional brightness, long lifetime and superior contrast ratio compared with traditional display technologies like liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs). V-pits play a vital role in enhancing performance in devices by affecting the quality of epitaxy wafer, the banding structure and carrier injection efficiency. In this cover image (DOI: 10.1002/elt2.70014), the study offers a systematic and comprehensive analysis of optical and electronic properties in LED chips affected by the V-pits coverage.\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":100403,"journal":{"name":"Electron","volume":"3 3","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/elt2.70018","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electron","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/elt2.70018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Gallium nitride (GaN)-based micro- or mini- light-emitting diodes (micro-LEDs and mini-LEDs) have emerged as promising candidate for next-generation display technologies due to their high resolution, exceptional brightness, long lifetime and superior contrast ratio compared with traditional display technologies like liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs). V-pits play a vital role in enhancing performance in devices by affecting the quality of epitaxy wafer, the banding structure and carrier injection efficiency. In this cover image (DOI: 10.1002/elt2.70014), the study offers a systematic and comprehensive analysis of optical and electronic properties in LED chips affected by the V-pits coverage.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
