IF 17.1 1区材料科学

ACS Nano Pub Date : 2026-10-20 DOI: 10.1021/acsnano.6c10625

Pooja Sharma,Soheil Haddadzadegan,Mahsa Ghafouri,Sushanth Gudlur,Ali Miserez

{"title":"Peptide Coacervates with Cathepsin B-Triggered Intracellular Cargo Release","authors":"Pooja Sharma,Soheil Haddadzadegan,Mahsa Ghafouri,Sushanth Gudlur,Ali Miserez","doi":"10.1021/acsnano.6c10625","DOIUrl":"https://doi.org/10.1021/acsnano.6c10625","url":null,"abstract":"Understanding the molecular grammar of liquid–liquid phase separation has enabled rational design of peptide coacervates as intracellular therapeutic carriers with tunable viscoelasticity, controlled cargo partitioning, and enhanced cellular uptake. However, sequence-level determinants governing coacervate disassembly remain poorly characterized. Encoding protease-recognition motifs within phase-separating peptides offers controlled, localized catalytic disassembly without requiring global perturbation via macroscopic triggers such as pH, ionic strength, temperature, or redox potential. Yet, enzymatic cleavage of coacervates is spatially biased and constrained by limited enzyme partitioning, restricted substrate accessibility, and altered kinetics relative to the dilute phase. Here, we test whether the lysosomal protease cathepsin B (CatB)─often upregulated in cancer cells─acts on coacervates assembled from phase-separating peptides encoding CatB-recognition motifs to enable intracellular cargo release in cancer cells. Common CatB-recognition motifs (GFLG and EVCit), developed for linker-based delivery systems under dilute conditions, preserved phase separation but exhibited poor CatB-triggered cleavage and cargo release. In contrast, a de novo motif, FRFV, designed from CatB subsite preferences, retained catalytic activity as confirmed by mass spectrometry and enabled protease-triggered cargo release in vitro and in cancer cells. Thus, protease-recognition motifs require reevaluation within dense-phase architectures to enable efficient intracellular cargo release through coacervate disassembly.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"34 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149221515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Assembly of negatively charged gold nanoparticles induced by a negatively charged polysaccharide (Gum Arabic)

IF 6.7 3区材料科学

Nanoscale Pub Date : 2026-10-20 DOI: 10.1039/d6nr03124b

Tal Zeharia,Ariel Cohen,Yaelle Schilt,Yael Levi-Kalisman,Uri Raviv,Rachel Yerushalmi-Rozen

引用次数: 0

Exploring the photovoltaic potential of perovskite-based multilayer solar cells: a computational investigation for solar energy applications

IF 6.7 3区材料科学

Nanoscale Pub Date : 2026-10-20 DOI: 10.1039/d6nr02444k

Imran Shakir,Hayat Khan,Muhammad Tahir Amin,Fiaz Hussain

{"title":"Exploring the photovoltaic potential of perovskite-based multilayer solar cells: a computational investigation for solar energy applications","authors":"Imran Shakir,Hayat Khan,Muhammad Tahir Amin,Fiaz Hussain","doi":"10.1039/d6nr02444k","DOIUrl":"https://doi.org/10.1039/d6nr02444k","url":null,"abstract":"Approximately 80% of our energy needs are fulfilled by fossil fuels, leading to carbon dioxide (CO2) emissions and environmental deterioration. Consequently, there is a growing global effort to identify sustainable alternatives for power generation. Among renewable resources, solar energy is prominent because of its minimal environmental impact. In this study, a numerical simulation of a lead-free organic–inorganic photovoltaic device based on the ZnSe/Na2AgRhBr6/CsSnI3/Spiro-OMeTAD heterostructure was performed using COMSOL Multiphysics. ZnSe functioned as an electron-transport layer, while Na2AgRhBr6 and CsSnI3 served as absorber layers for efficient photon harvesting, and a hole-transport layer was formed using Spiro-OMeTAD. The device characteristics were assessed by varying the thickness of layers, temperature, and carrier concentrations. The simulation yielded a short-circuit current density of 31.192 mA cm−2 when the acceptor concentration was 1 × 1020 cm−3. At the lowest investigated temperature of 275 K, the maximum power density (211.32 W m−2) was attained by the device, with a corresponding efficiency of 21.13%. The elevated temperatures caused thermal vibrations, resulting in reduced efficiency (19.01%). The resistance analysis revealed that for a device to work efficiently, lower series resistance, higher shunt resistance, and moderate values of the characteristic resistance are required. These results demonstrate the potential of the proposed structure for efficient photovoltaic applications.","PeriodicalId":92,"journal":{"name":"Nanoscale","volume":"33 1","pages":""},"PeriodicalIF":6.7,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149225855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Throughput Screening of Alucone and Zincone Photoresists through Molecular Layer Deposition

IF 11.9 2区材料科学

Journal of Materials Chemistry A Pub Date : 2026-10-20 DOI: 10.1039/d6ta03808e

Duncan J Reece,Emily R Crum,Jane Keth,David S Bergsman

{"title":"High-Throughput Screening of Alucone and Zincone Photoresists through Molecular Layer Deposition","authors":"Duncan J Reece,Emily R Crum,Jane Keth,David S Bergsman","doi":"10.1039/d6ta03808e","DOIUrl":"https://doi.org/10.1039/d6ta03808e","url":null,"abstract":"As extreme ultraviolet (EUV) lithography advances toward sub-10 nm half-pitch patterning, photoresists must deliver improved sensitivity while enabling higher resolution and reduced line-edge roughness. Hybrid organic–inorganic thin films deposited via molecular layer deposition (MLD) offer tunable composition and enhanced EUV absorptivity, making them promising resist candidates. Here, using a high-throughput MLD reactor, we screen twelve chemistries, comprising aluminum- and zinc-based hybrids linked by one of six organic diols, for their stability and processability. From these, an alkynefunctionalized alucone incorporating 2-butyne-1,4-diol (BTY) emerged as the leading candidate for detailed study. Characterization of this chemistry through Fourier-transform infrared spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry confirmed alkyne incorporation within the hybrid network, where the electron-rich triple bond may serve as a preferential site for radiation-induced crosslinking. Using electron-beam lithography at 100 kV as a proxy for EUV resist evaluation, a sensitivity of 𝐷50 = 2695 μC cm−2 with high contrast, 𝛾 = 2.19, was achieved while requiring 300× more dilute developer than previously reported hafnium-based MLD resists. Compared to other aluminum-based MLD resists, BTY-alucone exhibited 21–33× higher sensitivity. Dense patterns at 20 nm half-pitch were also achieved. These results establish alkyne-functionalized alucone as a promising EUV resist candidate and validate high-throughput MLD screening for accelerated resist development.","PeriodicalId":82,"journal":{"name":"Journal of Materials Chemistry A","volume":"12 1","pages":""},"PeriodicalIF":11.9,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149225863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-Mobility a-InZnO Thin-Film Transistors Incorporating an Oxygen-Related Defect Control Layer for Improved Illumination Stability and Environmental Reliability 采用氧相关缺陷控制层的高迁移率a-InZnO薄膜晶体管提高了照明稳定性和环境可靠性

IF 9.5 2区材料科学

ACS Applied Materials & Interfaces Pub Date : 2026-10-20 DOI: 10.1021/acsami.6c17895

Jihoon Han,Dong Keun Lee,Shilin Lu,Hyun Jae Kim

{"title":"High-Mobility a-InZnO Thin-Film Transistors Incorporating an Oxygen-Related Defect Control Layer for Improved Illumination Stability and Environmental Reliability","authors":"Jihoon Han,Dong Keun Lee,Shilin Lu,Hyun Jae Kim","doi":"10.1021/acsami.6c17895","DOIUrl":"https://doi.org/10.1021/acsami.6c17895","url":null,"abstract":"The introduction of an appropriate passivation layer is considered a viable strategy for improving the long-term stability and electrical performance of thin-film transistors (TFTs). In this study, an additional layer deposition strategy involving the deposition of a single-layer oxygen-related defect control layer on amorphous indium zinc oxide (a-IZO) thin-film transistors is developed. This approach improves the electrical characteristics and negative-bias illumination stress (NBIS) stability of the channel layer. The oxygen-related defect control layer is a hafnium oxynitride (HfON) layer. It functions as an insulating material with a relatively high dielectric constant, high film density, and low surface energy, serving as a protective barrier against environmental degradation such as exposure to ambient air and moisture. In addition, it contributes to the improvement of NBIS-induced stability by passivating the defect sites in a-IZO during the activation annealing process. Furthermore, the number of carriers in the channel layer increased because of the formation of oxygen vacancies in the a-IZO front channel through the oxygen adsorption of the oxygen-related defect control layer, resulting in the fabrication of thin films with better electrical properties. This resulted in field-effect mobility improving from 37.53 to 66.43 cm2/(V s), the on/off current ratio was enhanced from 1.93 × 109 to 5.77 × 1011, and the threshold voltage shift under NBIS at green light (532 nm) flux density of 1 mW/cm2 for 10,000 s decreased from 15.25 to 2.64 V.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"56 1","pages":""},"PeriodicalIF":9.5,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149218680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cascade-Catalytic MnO2 Nanoreactor Amplifies Oxidative Stress and Activates cGAS–STING Pathway To Remodel the Immunosuppressive Microenvironment of Triple-Negative Breast Cancer 级联催化MnO2纳米反应器放大氧化应激并激活cGAS-STING通路重塑三阴性乳腺癌免疫抑制微环境

IF 9.5 2区材料科学

ACS Applied Materials & Interfaces Pub Date : 2026-10-20 DOI: 10.1021/acsami.6c15680

Shiman Li,Shuchang Yao,Jingwen Yang,Wenqi Wang,Wenjing Li,Xinzhu Wang,Ke Zhang,Sha Xie,Xiaoyu Peng,Jian Ni,Xiaoxv Dong

{"title":"Cascade-Catalytic MnO2 Nanoreactor Amplifies Oxidative Stress and Activates cGAS–STING Pathway To Remodel the Immunosuppressive Microenvironment of Triple-Negative Breast Cancer","authors":"Shiman Li,Shuchang Yao,Jingwen Yang,Wenqi Wang,Wenjing Li,Xinzhu Wang,Ke Zhang,Sha Xie,Xiaoyu Peng,Jian Ni,Xiaoxv Dong","doi":"10.1021/acsami.6c15680","DOIUrl":"https://doi.org/10.1021/acsami.6c15680","url":null,"abstract":"Triple-negative breast cancer (TNBC) is characterized by a highly immunosuppressive tumor microenvironment, which severely limits the therapeutic efficacy of current immunotherapies. To address this challenge, we developed a hyaluronic acid-modified tumor-targeted MnO2 nanoreactor (HMGR@HA) for the codelivery of GOx and 20(S)-ginsenoside Rg3 (Rg3), thereby integrating metabolic interference with cascade catalytic therapy and endogenous immune activation. In this system, GOx continuously catalyzed the oxidation of glucose to generate H2O2, which was subsequently converted by MnO2 into highly cytotoxic reactive oxygen species (ROS) while simultaneously producing oxygen. This process established a self-reinforcing catalytic cycle that effectively circumvented the intrinsic limitation of insufficient endogenous H2O2 within the tumor microenvironment. The resulting amplified oxidative stress, in synergy with the chemotherapeutic effect of Rg3, induced profound mitochondrial dysfunction and triggered the cytosolic release of mtDNA. As a potent endogenous danger signal, cytosolic mtDNA robustly activated the cGAS-STING signaling axis, thereby converting localized oxidative damage into strong innate immune activation. In addition, HMGR@HA induced immunogenic cell death (ICD), promoted dendritic cells (DCs) maturation, enhanced infiltration of CD4+ and CD8+ effector T cells, and significantly depleted regulatory T cells (Tregs), collectively leading to extensive remodeling of the tumor immune microenvironment. Ultimately, this self-amplifying catalytic platform effectively drives the transition from localized tumor eradication to systemic antitumor immunity, offering a highly efficient therapeutic strategy for TNBC immunotherapy.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"7 1","pages":""},"PeriodicalIF":9.5,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149218686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Invisible Patterned Silver-Based Transparent Electrodes via Control of Light Scattering and Absorption 通过控制光散射和吸收的不可见图案银基透明电极

IF 9.5 2区材料科学

ACS Applied Materials & Interfaces Pub Date : 2026-10-20 DOI: 10.1021/acsami.6c09340

Aleksandra Pająk,Pavel Pleskunov,Oleg Zabeida,Bill Baloukas,Jolanta Klemberg-Sapieha,Ludvik Martinu

{"title":"Invisible Patterned Silver-Based Transparent Electrodes via Control of Light Scattering and Absorption","authors":"Aleksandra Pająk,Pavel Pleskunov,Oleg Zabeida,Bill Baloukas,Jolanta Klemberg-Sapieha,Ludvik Martinu","doi":"10.1021/acsami.6c09340","DOIUrl":"https://doi.org/10.1021/acsami.6c09340","url":null,"abstract":"The demand for transparent flexible electrodes (TFEs) with superior simultaneous optical, electrical, and mechanical performance beyond indium tin oxide (ITO) has driven the development of various nanostructured architectures. Metal-based patterned surfaces have become strong contenders in the TFEs field due to their significantly higher mechanical flexibility; however, their current use is, in part, limited by their scattering-induced visibility to the naked eye. Herein, we report polymeric web-assisted two-dimensional nanostructures, fabricated via electrospinning and integrated with gas-phase deposition methods such as magnetron sputtering, yielding thin film nanopatterning with ultra-high luminous transmittance (Tlum) of 98.1% and sheet resistance (Rs) of 17 Ω □–1. The addition of an antireflective coating enhances the Tlum to 99.7%. The designed trilayer, highly absorbing Fabry–Perot stack (Ag/ITO/NiCr) sputtered on patterned nanolines (NLs) leads to backward scattering suppression, rendering them significantly less visible than the “uncloaked” Ag-only NLs. Our findings are confirmed by finite-difference time-domain (FDTD) simulations. These high-performing, near-invisible electrodes allow for adjustable conductivity through thickness control without compromising transparency, while maintaining mechanical robustness under bending. They are also compatible with polymeric substrates, requiring only room-temperature polymer template dissolution, eliminating the need for high-temperature annealing and representing a promising route toward next-generation optoelectronic applications, including displays, photovoltaics, and wearable electronics.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"1 1","pages":""},"PeriodicalIF":9.5,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149221487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Monolithic 3D Stacked Carbon Nanotube/Indium–Tin–Oxide Complementary Transistors for High-Frequency Logic and Sense Amplifier Integration with Memory 单片3D堆叠碳纳米管/铟锡氧化物互补晶体管用于高频逻辑和感测放大器与存储器集成

IF 17.1 1区材料科学

ACS Nano Pub Date : 2026-10-20 DOI: 10.1021/acsnano.6c11662

Ranhui Liu,Yuansheng Zhao,Shenwu Zhu,Tianyue Fu,Zhiyu Wang,Yuzhe Zhu,Chao Wang,Lianmao Peng,Qianlan Hu

{"title":"Monolithic 3D Stacked Carbon Nanotube/Indium–Tin–Oxide Complementary Transistors for High-Frequency Logic and Sense Amplifier Integration with Memory","authors":"Ranhui Liu,Yuansheng Zhao,Shenwu Zhu,Tianyue Fu,Zhiyu Wang,Yuzhe Zhu,Chao Wang,Lianmao Peng,Qianlan Hu","doi":"10.1021/acsnano.6c11662","DOIUrl":"https://doi.org/10.1021/acsnano.6c11662","url":null,"abstract":"Complementary field-effect transistors (CFETs) maximize 3D integration density but face two fundamental bottlenecks: the stringent thermal budget of silicon-based sequential stacking and the inherent electrical mismatches in homogeneous material systems. To overcome these challenges, we demonstrate a monolithic 3D-stacked heterogeneous CFET architecture integrating back-end-of-line (BEOL)-compatible p-type carbon nanotube (CNT) and n-type indium–tin–oxide (ITO) channels. Both materials exhibit high carrier mobility and low-temperature process, which simultaneously resolve the bipolar transport disparity and mitigate thermal degradation. Consequently, the resulting CFET inverters exhibit favorable statistical uniformity and symmetric transfer characteristics, enabling the fabrication of versatile logic gates. Besides, a 5-stage ring oscillator (RO) achieves a high frequency of 334 MHz, with a 0.3 ns stage delay, demonstrating potential applications of CFET in high-speed digital circuits. Furthermore, bridging logic and memory, a CFET-based sense amplifier (SA) is integrated with an ITO-based planar capacitorless (2T0C) dynamic random-access memory (DRAM) cell. This hybrid system achieves data write/read operations and signal amplification, providing an architectural platform for next-generation ultradense 3D logic and memory systems.","PeriodicalId":21,"journal":{"name":"ACS Nano","volume":"73 1","pages":""},"PeriodicalIF":17.1,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149221497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Charge-Density-Dependent Ionomer Effects in Pure-Water CO2 Electrolysis 纯水CO2电解中的电荷-密度依赖离聚体效应

IF 22 1区材料科学

ACS Energy Letters Pub Date : 2026-10-20 DOI: 10.1021/acsenergylett.6c02712

Minqiu Lan,Wenhao Ren,Linsen Huang,Xiaogang Sun,Shi-Zhang Qiao

{"title":"Charge-Density-Dependent Ionomer Effects in Pure-Water CO2 Electrolysis","authors":"Minqiu Lan,Wenhao Ren,Linsen Huang,Xiaogang Sun,Shi-Zhang Qiao","doi":"10.1021/acsenergylett.6c02712","DOIUrl":"https://doi.org/10.1021/acsenergylett.6c02712","url":null,"abstract":"Pure-water membrane electrode assemblies (MEAs) represent a promising strategy to eliminate (bi)carbonate salt precipitation for electrochemical CO2 reduction (CO2R). However, the absence of alkali metal cations fundamentally restricts CO2 activation and intermediate stabilization, thereby reducing catalytic performance. Here, we overcome this limitation by identifying the ionomer charge density as a key molecular-level parameter associated with pure-water CO2R. By comparing anion-exchange ionomers with varying charge characteristics, we reveal that high-charge-density ionomer (HCDI) introduces a favorable catalyst–membrane interfacial environment, enabling superior macroscopic CO2R performance. HCDI-enabled MEAs achieve >99% CO Faradaic efficiency at 100 mA cm–2 and sustain ∼92% at 1000 mA cm–2. In situ diagnosis and electrochemical characterization reveal that the HCDI-functionalized interface produces a substantial *CO signal, while concurrently suppressing hydrogen evolution. By decoupling cation effects from liquid electrolytes, these findings support interfacial ionomer charge density as a useful comparative parameter for pure-water CO2 MEA electrolyzers.","PeriodicalId":16,"journal":{"name":"ACS Energy Letters ","volume":"12 1","pages":""},"PeriodicalIF":22.0,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149221517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Thermal Transport in Atomic Layer Deposition-Grown Beryllium Oxide Thin Films and Implications on Device Cooling 原子层沉积生长氧化铍薄膜的热输运及其对器件冷却的影响

IF 9.5 2区材料科学

ACS Applied Materials & Interfaces Pub Date : 2026-10-20 DOI: 10.1021/acsami.6c16056

Husam Walwil,Jonghyun Bae,Seokjun Kim,Dohwan Jung,Nipun Sutradhar,Asad Ali,Sadikul Alam,Robert M. Lavelle,Mohamadali Malakoutian,Kelly Woo,Kaiyan Shan,Hongkun Li,Weidong Zheng,Prakash R. Sultane,Christopher W. Bielawski,Minji Kim,Jiun Oh,Joon Seop Kwak,Srabanti Chowdhury,Jinwoo Hwang,Jae-Hyun Ryou,Jungwoo Oh,Sukwon Choi

{"title":"Thermal Transport in Atomic Layer Deposition-Grown Beryllium Oxide Thin Films and Implications on Device Cooling","authors":"Husam Walwil,Jonghyun Bae,Seokjun Kim,Dohwan Jung,Nipun Sutradhar,Asad Ali,Sadikul Alam,Robert M. Lavelle,Mohamadali Malakoutian,Kelly Woo,Kaiyan Shan,Hongkun Li,Weidong Zheng,Prakash R. Sultane,Christopher W. Bielawski,Minji Kim,Jiun Oh,Joon Seop Kwak,Srabanti Chowdhury,Jinwoo Hwang,Jae-Hyun Ryou,Jungwoo Oh,Sukwon Choi","doi":"10.1021/acsami.6c16056","DOIUrl":"https://doi.org/10.1021/acsami.6c16056","url":null,"abstract":"Thin film beryllium oxide (BeO) is an emerging material that can potentially be used as a high thermal conductivity gate dielectric and/or passivation layer for high power electronic devices. This study presents the measurement of the thermal conductivity and thermal boundary conductance associated with plasma-enhanced atomic layer deposition (PEALD)-grown polycrystalline BeO films on Si substrates with thicknesses ranging from 25 to 250 nm. The measured out-of-plane thermal conductivities of the 250, 113, 53, and 26 nm-thick BeO films are 13.45 ± 1.45, 8.7 ± 1.35, 7.2 ± 2.1, and 5 ± 2.2 W m–1 K–1, respectively, representing an order-of-magnitude improvement over conventional dielectric materials such as SiN and SiO2. The measured thermal boundary conductance across the BeO/Si interface is ∼200 MW m–2 K–1 at room temperature, which approaches the intrinsic interface limit and suggests that interfacial heat transport is predominantly governed by elastic phonon transmission. The growth of a ∼200 nm-thick polycrystalline diamond film on an AlGaN/GaN-on-Si epitaxial wafer using a 5 nm-thick BeO diamond-seeding is demonstrated, where the structural integrity of the underlying AlGaN/GaN heterostructure is fully preserved. Thermal simulations of AlGaN/GaN high electron mobility transistors (HEMTs) integrated with a top-side polycrystalline diamond heat spreader predict that replacing the conventional SiO2 passivation and nucleation layers with BeO helps reduce the channel temperature rise by an additional 5.2%.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"63 1","pages":""},"PeriodicalIF":9.5,"publicationDate":"2026-10-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149221602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

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