A self-powered and cost-effective rGO/n-Si photodetector with broad spectral response including visible, UV, and near-IR regions

IF 4.6 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-08-04 DOI:10.1016/j.mseb.2025.118659

Mehmet Yilmaz , Mehmet Yaman , Fatma Yildirim , Samsoor Nuhzat , Sakir Aydogan

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引用次数: 0

Abstract

Schottky-type photodetectors are considered an attractive research focus by researchers due to their simple fabrication process and fast response time. However, optimization of the Schottky barrier height is still considered a major challenge, which is being investigated to improve device performance for visible light sensing applications. The study aims to fabricate a reduced graphene oxide/silicon (rGO/n-Si) Schottky photodetector optimized for high-performance visible light sensing and characterize the diode parameters. The fabricated device exhibited a high ON/OFF ratio of 10³, a detection of 5.21 × 10¹¹ Jones (D^∗) and a responsivity of 700 mA/W (R) under 590 nm illumination. The instrument also demonstrated excellent spectral sensitivity in the UV range with high external quantum efficiency (EQE) exceeding 200 % at 365 nm. The obtained results have demonstrated the potential of rGO as a tunable interfacial material to obtain optimized Schottky junctions in optoelectronic applications and are thought to be instructive for other researchers.

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一种自供电且具有成本效益的rGO/n-Si光电探测器，具有广谱响应，包括可见光，紫外和近红外区域

肖特基型光电探测器由于其制作工艺简单、响应时间快等优点，一直是研究人员关注的热点。然而，肖特基势垒高度的优化仍然被认为是一个主要的挑战，正在研究以提高可见光传感应用的器件性能。该研究旨在制造一种用于高性能可见光传感的还原氧化石墨烯/硅（rGO/n-Si）肖特基光电探测器，并表征二极管参数。该器件在590nm光照下具有高达103的开/关比、5.21 × 1011 Jones （D∗）的检出率和700 mA/W (R)的响应度。该仪器在紫外范围内表现出优异的光谱灵敏度，在365 nm处具有高的外量子效率（EQE），超过200%。所获得的结果证明了氧化石墨烯作为可调界面材料在光电应用中获得优化肖特基结的潜力，并被认为对其他研究人员具有指导意义。

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.