Materials Science and Engineering: B最新文献

{"title":"Performance assessment and machine learning-driven optimization of Ca3NBr3-based bifacial perovskite solar cells: improving VOC via HTL and charge transport layer analysis","authors":"Asadul Islam Shimul ,&nbsp;Bipul Chandra Biswas ,&nbsp;Avijit Ghosh ,&nbsp;Nasser S. Awwad ,&nbsp;Aijaz Rasool Chaudhry","doi":"10.1016/j.mseb.2025.118600","DOIUrl":"10.1016/j.mseb.2025.118600","url":null,"abstract":"<div><div>This study examines the optoelectronic characteristics of Calcium Nitride Bromide (Ca₃NBr₃) as a prospective absorber material for heterojunction solar cells. This work assesses the efficacy of two-hole transport layers (HTLs), MASnBr₃ and P3HT, in conjunction with two electron transport layers (ETLs), C₆₀ and ZnO, through SCAPS-1D modeling. By optimizing layer thickness, doping concentrations, defects, and recombination parameters, a peak power conversion efficiency (PCE) of 28.76 % was obtained using MASnBr₃ as the HTL and ZnO as the ETL. The enhancement in performance is ascribed to the reduced recombination losses at the absorber/HTL interface, resulting in increased open-circuit voltage (V_OC) and overall efficiency. The device exhibited notable bifacial performance, with an efficiency of 32.83 % and a bifacial gain of 17.69 %. A machine learning model was developed to predict solar cell performance, attaining an accuracy of 82.75 %. The findings indicate that Ca₃NBr₃ may improve the performance of perovskite-based solar cells.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"322 ","pages":"Article 118600"},"PeriodicalIF":3.9,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144614840","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical and experimental investigation on using Arrhenius equation to analyze conductivities of proton ceramic electrolytes","authors":"Fa Zheng ,&nbsp;Ruiming Qiu ,&nbsp;Jihao Zhang ,&nbsp;Zetian Tao ,&nbsp;Libin Lei","doi":"10.1016/j.mseb.2025.118580","DOIUrl":"10.1016/j.mseb.2025.118580","url":null,"abstract":"<div><div>Protonic ceramic electrolytes (PCEs) are widely applied to proton ceramic electrochemical cells. The Arrhenius equation is commonly used to analyze the electrical conductivity of PCEs. However, for the same material, the activation energy (<span><math><msub><mi>E</mi><mi>a</mi></msub></math></span>) derived from this equation varies in different studies, raising concerns about its reliability. In this study, to clarify this issue, a precise defect model, considering proton defects, oxygen vacancies, and electron-holes, is established to analyze the experimentally measured conductivities of BaZr_0.8Y_0.2O₃ (BZY82). <span><math><msub><mi>E</mi><mi>a</mi></msub></math></span> determined by the Arrhenius equation under various conditions are compared with those from the precise model. Based on the investigation, new practical guidelines for using the Arrhenius equation to analyze the conduction properties of PCEs are provided.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"322 ","pages":"Article 118580"},"PeriodicalIF":3.9,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144614928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preliminary exploration of the deposition time compensation of APPJ direction to thickness of SiO2 electrical insulation coating","authors":"Yuji Hao ,&nbsp;Kai Ni ,&nbsp;Tingting Yao ,&nbsp;Hualin Wang ,&nbsp;Wanyu Ding ,&nbsp;Qizhen Wang","doi":"10.1016/j.mseb.2025.118613","DOIUrl":"10.1016/j.mseb.2025.118613","url":null,"abstract":"<div><div>SiO₂ coatings are deposited on the stainless steel plate by atmospheric pressure plasma jet (APPJ) technology. APPJ direction changes from gravity direction to anti-gravity direction, by which to simulate SiO₂ coatings deposited on the inner wall of pipes. The results show that SiO₂ coatings are amorphous structure with about 10 MΩ/μm electrical insulation resistance. APPJ direction has little influence on above properties. While, the deposition rate of SiO₂ coatings is influenced by APPJ direction. The loss of desorbed SiO₂ partials increases with the increase of angle between APPJ and gravity directions, which decreases the deposition rate of SiO₂ coatings. In order to deposit SiO₂ coatings on the inner wall of pipes with uniform thickness, the deposition time compensation ratio is also calculated, which display the complex parabola structure. With the deposition time compensation, APPJ technology will be the potential one to deposit SiO₂ coatings on the inner wall of pipes.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"322 ","pages":"Article 118613"},"PeriodicalIF":3.9,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144614843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced acetone gas sensor based on ZnCo2O4/rGO/Ag composite: Morphology and concentration effects","authors":"M. Ebrahimifar ,&nbsp;I. Kazeminezhad","doi":"10.1016/j.mseb.2025.118587","DOIUrl":"10.1016/j.mseb.2025.118587","url":null,"abstract":"<div><div>In the present work, ZnCo₂O₄/rGO/Ag nanocomposite was synthesized and structurally studied by XRD and FESEM techniques. Then the nanocomposite was used as the main part of a gas sensor. Considering the importance of morphology in gas sensing, two different morphologies of ZnCo₂O₄, microrods (ZCO-R) and microspheres (ZCO-S) were synthesized in pure and composited with rGO forms and used in acetone gas sensing. After obtaining relatively good response of 15.2 at 200 °C temperature for ZCO-S/rGO_0.50mg/ml composite, in order to improve the sensing performance, this composite was decorated with different weight percentages of Ag nanoparticles. The sensor made of ZCO-S/rGO_0.50mg/ml/Ag_4% decorated nanocomposite showed a significant increase in response as 38.5 at a temperature of 160 °C the best sensing performance with a response of at low working temperature compared to other sensors. This result indicates the synergistic effect of Ag and rGO on ZCO-S in enhancing the performance of ZCO-S/rGO/Ag decorated nanocomposite gas sensor. The sensor made of this composite showed very good response time of 14 s, recovery time of 40 s, and stability in the long-term period. The results also showed that this composite has relatively good selectivity to acetone gas compared to other gases such as ethanol, benzene, methanol, isopropane and toluene.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"322 ","pages":"Article 118587"},"PeriodicalIF":3.9,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144614842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Low-temperature magnetic phase transition and dielectric relaxation mechanism in triclinic NiV2O6","authors":"Subrata Karmakar ,&nbsp;B. Mamatha ,&nbsp;G. Rajashekhar ,&nbsp;Ravikiran Uppala ,&nbsp;G.Anil Kumar ,&nbsp;G. Nataraju ,&nbsp;Rajkumar Boddhula ,&nbsp;K. Mukherjee","doi":"10.1016/j.mseb.2025.118608","DOIUrl":"10.1016/j.mseb.2025.118608","url":null,"abstract":"<div><div>In the present work, we report the synthesis, structural characterization, and low-temperature magnetic and dielectric response of NiV₂O₆ prepared by solid-state techniques to explore its possible materials characteristics, magnetic phase transition, and dielectric relaxation mechanism. The Rietveld refinement of the X-ray diffraction (XRD) pattern of NiV₂O₆ reveals the single-phase triclinic crystal structure with space group <em>P-1</em>. The room temperature Raman spectra exhibit distinctive stretching, bending, and lattice vibrational modes of <em>A_g</em> and <em>B_g</em> in the wide spectrum range 50–900 cm⁻¹, corresponding to the triclinic structure of NiV₂O₆. It was observed from the high resolution field emission scanning electron microscopy (FESEM) images that the NiV₂O₆ particles are not agglomerated and uniformly distributed over space with an average particles sizes ∼ 1–6 µm and the elemental mapping with their atomic and weight percentages of Ni, Vi, and O was confirmed by energy dispersive X-ray spectroscopy (EDS). The Ni²⁺ (3d⁸) states and Ni²⁺–O–V⁵⁺–O–Ni²⁺ superexchange interactions confirmed by X-ray photoelectron (XPS) spectroscopy are mainly responsible for antiferromagnetic interaction in NiV₂O₆. The magnetization vs. temperature (<em>M−T</em>) graphs of NiV₂O₆ at a dc magnetic field of 100 Oe exhibit a paramagnetic to antiferromagnetic transition (<em>T_N</em>) at 16.3 K, and the inverse susceptibility fitted by Curie-Weiss law yielded a paramagnetic moment ∼ 3.25µ_B and Weiss constant<span><math><msub><mi>θ</mi><mrow><mi>CW</mi></mrow></msub></math></span> = -16.3 K. The magnetization vs. field (<em>M−H</em>) isotherm reveals the wavy curves at temperature 2 K, which suggests a metamagnetic transition up to the Neel temperature. The dielectric constant (ε_r) increases with temperature due to the contribution of dipolar or ionic polarization at various temperatures from 80 K to 325 K. The low-temperature magnetic transitions and dielectric relaxation behavior of NiV₂O₆ are attractive for several emerging technologies, such as quantum magnetism and spintronic devices, and cryogenic magnetic and dielectric sensors applications.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"322 ","pages":"Article 118608"},"PeriodicalIF":3.9,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144614851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Characterizing quasiparticle recombination time in epitaxial NbN thin films on (1 0 0) MgO","authors":"J.C. Zapata ,&nbsp;Chanyoung Lee ,&nbsp;Yeonkyu Lee ,&nbsp;Jinyoung Yun ,&nbsp;M. Sirena ,&nbsp;Jeehoon Kim ,&nbsp;N. Haberkorn","doi":"10.1016/j.mseb.2025.118607","DOIUrl":"10.1016/j.mseb.2025.118607","url":null,"abstract":"<div><div>We report on the vortex dynamics of a 14 nm thick (1 0 0) NbN thin film grown by reactive sputtering on (1 0 0) MgO. The film exhibits a smooth surface and a critical temperature (<em>T_c</em>) of 16.2 K. Thickness was confirmed by low-angle X-ray reflectivity, and two-dimensional behavior in the upper critical field was observed with the magnetic field parallel to the surface. The quasiparticle recombination time (τ) near <em>T_c</em> was determined using I-V curves, showing a thermally activated process, with τ decreasing as temperature rises, reaching ∼20 ps at 14 K. These results are compared with literature values and analyzed considering intrinsic factors (superconducting properties, substrate thermal conductivity) and extrinsic factors (vortex pinning, disorder). Our findings offer insights into vortex dynamics and the Larkin-Ovchinnikov instability in epitaxial NbN thin films, highlighting their relevance for cryogenic devices.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"322 ","pages":"Article 118607"},"PeriodicalIF":3.9,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144614839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of V doping on the structural and thermodynamic properties of U2Mo: A first-principles study","authors":"Shuaiyi Shui,&nbsp;Xinyu Zhang,&nbsp;Jia Song,&nbsp;Dezhong Wang,&nbsp;Wentao Zhou","doi":"10.1016/j.mseb.2025.118578","DOIUrl":"10.1016/j.mseb.2025.118578","url":null,"abstract":"<div><div>Uranium-molybdenum (U-Mo) alloys face challenges in reactor applications due to interfacial diffusion with aluminum cladding. Using first-principles calculations, this study investigates how vanadium (V) doping influences U2Mo’s structural and thermodynamic properties. By constructing ternary U-Mo-V models with varying V ratios, we demonstrate that V enhances structural stability and bonding strength via d-f orbital hybridization while reducing ductility. Increasing V content elevates hardness and thermal stability but lowers elastic anisotropy. Thermodynamic analyses reveal systematic trends in Gibbs free energy, thermal expansion coefficients, and heat capacity under high temperatures. These findings provide critical insights into V-doped U2Mo’s performance optimization, offering theoretical guidance for designing advanced nuclear fuels with improved irradiation resistance and thermal management.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"322 ","pages":"Article 118578"},"PeriodicalIF":3.9,"publicationDate":"2025-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144605774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial charge transfer induced high photoresponsivity in WSe2/PdSe2 heterostructure photodetectors","authors":"Jing Xu ,&nbsp;Xusheng Wang ,&nbsp;Yuhai Lin,&nbsp;Tingting Guo,&nbsp;Runmeng Jia,&nbsp;Ahmad Farhan,&nbsp;Banqin Ruan,&nbsp;Zhiwei Zhang,&nbsp;Xiang Chen,&nbsp;Xiufeng Song,&nbsp;Haibo Zeng","doi":"10.1016/j.mseb.2025.118606","DOIUrl":"10.1016/j.mseb.2025.118606","url":null,"abstract":"<div><div>Two-dimensional (2D) materials exhibit significant potential for photodetection applications due to their superior light absorption properties and outstanding carrier mobility. The construction of heterojunctions by stacking distinct 2D materials enables optimization of interfacial charge transfer and broadband light absorption, thereby substantially enhancing the responsivity and detectivity of detectors. In this work, a high-performance WSe₂/PdSe₂ heterojunction photodetector was fabricated using chemical vapor deposition and micro-nano processing techniques. This device demonstrates a remarkable photoresponsivity of 42.47 A/W and a specific detectivity of 1.09 × 10¹² Jones under 532 nm laser irradiation. The built-in electric field at the heterojunction interface facilitates effective charge separation and transfer, resulting in improvements in detectivity and responsivity by one and two orders of magnitude, respectively, compared to devices based on individual WSe₂. These results underscore the pivotal potential of heterojunction engineering in advancing high-performance optoelectronic devices.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"322 ","pages":"Article 118606"},"PeriodicalIF":3.9,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144605770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"CuS quantum dots doped with Mn and Mn/Co codopant with PVP capping layer for synergetic electron transfer in solar cell","authors":"G. Vinoth ,&nbsp;B. Janarthanan ,&nbsp;Jhelai Sahadevan ,&nbsp;A. Dinesh ,&nbsp;Madhappan Santhamoorthy ,&nbsp;S. Santhoshkumar","doi":"10.1016/j.mseb.2025.118602","DOIUrl":"10.1016/j.mseb.2025.118602","url":null,"abstract":"<div><div>A sincere effort has been taken to dope Mn and co-dopant of Co with Mn over CuS quantum dots on a polyvinyl pyrrolidone matrix (PVP) by co-precipitation method. X-ray diffraction and UV–Visible spectrum for the doped (Mn) and co-doped (Mn/Co) samples undergone with varying concentrations of Mn (1 %, 2 % and 3 % Wt) and Mn/Co (1 %/2% and 2 %/4%). Grain size evaluated using Debye-Scherrer formula from XRD spectrum for all the samples varies from 7 nm to 10 nm which is concurrent with the results obtained from size distribution plot from TEM analysis. From UV–Visible and Photoluminescence spectrum, the bandgap and emission wavelength has been found. Solar cell devices have been fabricated with the architecture of FTO/TiO₂/CuS/Mn/Na₂S/Graphene/FTO (dopant – Mn) and FTO/TiO₂/CuS/Mn/Co/Na₂S/Graphene/FTO (dopant – Mn and co-dopant – Co). The concentration of Mn (2 %) with co-dopant of Co (4 %) on CuS in the solar cell device has produced the highest photoconversion efficiency of 1.6756 %.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"322 ","pages":"Article 118602"},"PeriodicalIF":3.9,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144595921","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-stage superlattice growth approach integrating two-dimensional polarization enhancement mechanism for optimized p-type heterostructures in AlGaN DUV-LEDs","authors":"Chandra Prakash Singh,&nbsp;Kankat Ghosh","doi":"10.1016/j.mseb.2025.118601","DOIUrl":"10.1016/j.mseb.2025.118601","url":null,"abstract":"<div><div>Deep-ultraviolet (DUV) LEDs operating at ∼ 273  nm offers strong potential for disinfection applications, yet their wall-plug efficiency (WPE) remains limited due to suboptimal p-type heterostructures. In this study, we propose a two-dimensional polarization-enhanced mechanism using a two-stage superlattice (TSSL) growth approach to replace the conventional p-AlGaN hole injection layer. The first-stage consists of a short-period Al_0.57Ga_0.43N/Al_0.47Ga_0.53N superlattice, while the second-stage employs a long-period Al_0.30Ga_0.70N/Al_0.15Ga_0.85N superlattice. This structure enables enhanced Mg-activation, optimized band alignment, improved hole transport via polarization pockets, and enhanced optical transparency through higher Al-composition and quantum confinement effects. Compared to conventional designs, the TSSL architecture delivers a 3.4-fold increase in internal quantum efficiency, a 176 % rise in light output power, a 63 % reduction in efficiency droop, a 13 % drop in operating voltage, and reduced absorption losses. These improvements result in a significant enhancement in WPE, validating the effectiveness of the proposed growth strategy for high-performance AlGaN-based DUV emitters.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"322 ","pages":"Article 118601"},"PeriodicalIF":3.9,"publicationDate":"2025-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144595923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}