CuS quantum dots doped with Mn and Mn/Co codopant with PVP capping layer for synergetic electron transfer in solar cell

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
G. Vinoth , B. Janarthanan , Jhelai Sahadevan , A. Dinesh , Madhappan Santhamoorthy , S. Santhoshkumar
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引用次数: 0

Abstract

A sincere effort has been taken to dope Mn and co-dopant of Co with Mn over CuS quantum dots on a polyvinyl pyrrolidone matrix (PVP) by co-precipitation method. X-ray diffraction and UV–Visible spectrum for the doped (Mn) and co-doped (Mn/Co) samples undergone with varying concentrations of Mn (1 %, 2 % and 3 % Wt) and Mn/Co (1 %/2% and 2 %/4%). Grain size evaluated using Debye-Scherrer formula from XRD spectrum for all the samples varies from 7 nm to 10 nm which is concurrent with the results obtained from size distribution plot from TEM analysis. From UV–Visible and Photoluminescence spectrum, the bandgap and emission wavelength has been found. Solar cell devices have been fabricated with the architecture of FTO/TiO2/CuS/Mn/Na2S/Graphene/FTO (dopant – Mn) and FTO/TiO2/CuS/Mn/Co/Na2S/Graphene/FTO (dopant – Mn and co-dopant – Co). The concentration of Mn (2 %) with co-dopant of Co (4 %) on CuS in the solar cell device has produced the highest photoconversion efficiency of 1.6756 %.
cu量子点掺杂Mn和Mn/Co共掺杂剂及PVP封盖层用于太阳能电池中的协同电子转移
采用共沉淀法在聚乙烯吡咯烷酮基体(PVP)上用cu量子点掺杂Mn和Co与Mn共掺杂剂。掺杂(Mn)和共掺杂(Mn/Co)样品的x射线衍射和紫外可见光谱经历了不同浓度的Mn(1%、2%和3% Wt)和Mn/Co(1% /2%和2% /4%)。XRD谱图采用Debye-Scherrer公式对样品的晶粒尺寸进行了评价,其范围在7 ~ 10 nm之间,与TEM粒度分布图的结果一致。从紫外可见光谱和光致发光光谱中,找到了带隙和发射波长。采用FTO/TiO2/ cu /Mn/Na2S/石墨烯/FTO(掺杂剂- Mn)和FTO/TiO2/ cu /Mn/Co/Na2S/石墨烯/FTO(掺杂剂- Mn和共掺杂剂- Co)结构制备了太阳能电池器件。当cu上Mn浓度为2%,Co共掺杂量为4%时,太阳能电池器件的光转换效率最高,为1.6756%。
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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