AlGaN DUV-LEDs优化p型异质结构的两阶段超晶格生长方法集成二维极化增强机制

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-07-11 DOI:10.1016/j.mseb.2025.118601

Chandra Prakash Singh, Kankat Ghosh

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引用次数: 0

摘要

工作在~ 273 nm的深紫外（DUV） led为消毒应用提供了强大的潜力，但由于次优p型异质结构，其壁插效率（WPE）仍然有限。在这项研究中，我们提出了一种二维极化增强机制，使用两阶段超晶格（TSSL）生长方法来取代传统的p-AlGaN孔注入层。第一阶段为短周期Al0.57Ga0.43N/Al0.47Ga0.53N超晶格，第二阶段为长周期Al0.30Ga0.70N/Al0.15Ga0.85N超晶格。这种结构可以增强mg活化，优化能带对准，通过极化袋改善空穴传输，并通过更高的al成分和量子约束效应增强光学透明度。与传统设计相比，TSSL架构的内部量子效率提高了3.4倍，光输出功率提高了176%，效率下降了63%，工作电压下降了13%，并减少了吸收损耗。这些改进显著提高了WPE，验证了所提出的高性能algan基DUV发射器生长策略的有效性。

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Two-stage superlattice growth approach integrating two-dimensional polarization enhancement mechanism for optimized p-type heterostructures in AlGaN DUV-LEDs

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Two-stage superlattice growth approach integrating two-dimensional polarization enhancement mechanism for optimized p-type heterostructures in AlGaN DUV-LEDs

Deep-ultraviolet (DUV) LEDs operating at ∼ 273 nm offers strong potential for disinfection applications, yet their wall-plug efficiency (WPE) remains limited due to suboptimal p-type heterostructures. In this study, we propose a two-dimensional polarization-enhanced mechanism using a two-stage superlattice (TSSL) growth approach to replace the conventional p-AlGaN hole injection layer. The first-stage consists of a short-period Al_0.57Ga_0.43N/Al_0.47Ga_0.53N superlattice, while the second-stage employs a long-period Al_0.30Ga_0.70N/Al_0.15Ga_0.85N superlattice. This structure enables enhanced Mg-activation, optimized band alignment, improved hole transport via polarization pockets, and enhanced optical transparency through higher Al-composition and quantum confinement effects. Compared to conventional designs, the TSSL architecture delivers a 3.4-fold increase in internal quantum efficiency, a 176 % rise in light output power, a 63 % reduction in efficiency droop, a 13 % drop in operating voltage, and reduced absorption losses. These improvements result in a significant enhancement in WPE, validating the effectiveness of the proposed growth strategy for high-performance AlGaN-based DUV emitters.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.