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APPJ方向沉积时间对SiO2电绝缘涂层厚度补偿的初步探讨

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-07-14 DOI:10.1016/j.mseb.2025.118613

Yuji Hao , Kai Ni , Tingting Yao , Hualin Wang , Wanyu Ding , Qizhen Wang

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引用次数: 0

摘要

采用常压等离子体射流（APPJ）技术在不锈钢板上沉积SiO2涂层。APPJ方向由重力方向转变为反重力方向，以此来模拟沉积在管道内壁的SiO2涂层。结果表明：SiO2涂层为无定形结构，电绝缘电阻约为10 MΩ/μm；APPJ方向对上述性能影响不大。而SiO2涂层的沉积速率受APPJ方向的影响。随着APPJ与重力方向夹角的增大，脱附SiO2的损失增大，从而降低了SiO2涂层的沉积速率。为了在均匀厚度的管道内壁沉积SiO2涂层，还计算了沉积时间补偿比，其呈现复杂抛物线结构。通过对沉积时间的补偿，APPJ技术将成为在管道内壁沉积SiO2涂层的潜在技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Preliminary exploration of the deposition time compensation of APPJ direction to thickness of SiO2 electrical insulation coating

查看原文本刊更多论文

Preliminary exploration of the deposition time compensation of APPJ direction to thickness of SiO2 electrical insulation coating

SiO₂ coatings are deposited on the stainless steel plate by atmospheric pressure plasma jet (APPJ) technology. APPJ direction changes from gravity direction to anti-gravity direction, by which to simulate SiO₂ coatings deposited on the inner wall of pipes. The results show that SiO₂ coatings are amorphous structure with about 10 MΩ/μm electrical insulation resistance. APPJ direction has little influence on above properties. While, the deposition rate of SiO₂ coatings is influenced by APPJ direction. The loss of desorbed SiO₂ partials increases with the increase of angle between APPJ and gravity directions, which decreases the deposition rate of SiO₂ coatings. In order to deposit SiO₂ coatings on the inner wall of pipes with uniform thickness, the deposition time compensation ratio is also calculated, which display the complex parabola structure. With the deposition time compensation, APPJ technology will be the potential one to deposit SiO₂ coatings on the inner wall of pipes.

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来源期刊

Materials Science and Engineering: B

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.

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