（1 0 0） MgO外延NbN薄膜准粒子复合时间表征

IF 3.9 3区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Materials Science and Engineering: B Pub Date : 2025-07-14 DOI:10.1016/j.mseb.2025.118607

J.C. Zapata , Chanyoung Lee , Yeonkyu Lee , Jinyoung Yun , M. Sirena , Jeehoon Kim , N. Haberkorn

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引用次数: 0

摘要

本文报道了在（10 0）MgO上反应溅射生长14 nm厚（10 0）NbN薄膜的涡旋动力学。薄膜表面光滑，临界温度（Tc）为16.2 K。通过低角度x射线反射率确定了厚度，并观察了平行于表面的磁场在上临界场中的二维行为。使用I-V曲线确定了Tc附近的准粒子复合时间（τ），显示了一个热激活过程，τ随着温度的升高而降低，在14 K时达到~ 20 ps。对这些结果进行了比较，并考虑了内在因素（超导性、衬底导热性）和外在因素（涡旋钉住、无序性）进行了分析。我们的研究结果提供了对外延NbN薄膜的涡旋动力学和拉金-奥夫钦尼科夫不稳定性的见解，突出了它们与低温器件的相关性。

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Characterizing quasiparticle recombination time in epitaxial NbN thin films on (1 0 0) MgO

We report on the vortex dynamics of a 14 nm thick (1 0 0) NbN thin film grown by reactive sputtering on (1 0 0) MgO. The film exhibits a smooth surface and a critical temperature (T_c) of 16.2 K. Thickness was confirmed by low-angle X-ray reflectivity, and two-dimensional behavior in the upper critical field was observed with the magnetic field parallel to the surface. The quasiparticle recombination time (τ) near T_c was determined using I-V curves, showing a thermally activated process, with τ decreasing as temperature rises, reaching ∼20 ps at 14 K. These results are compared with literature values and analyzed considering intrinsic factors (superconducting properties, substrate thermal conductivity) and extrinsic factors (vortex pinning, disorder). Our findings offer insights into vortex dynamics and the Larkin-Ovchinnikov instability in epitaxial NbN thin films, highlighting their relevance for cryogenic devices.

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来源期刊

Materials Science and Engineering: B 工程技术-材料科学：综合

CiteScore

5.60

自引率

2.80%

发文量

481

审稿时长

3.5 months

期刊介绍： The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.