V掺杂对U2Mo结构和热力学性质影响的第一性原理研究

IF 3.9 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Shuaiyi Shui, Xinyu Zhang, Jia Song, Dezhong Wang, Wentao Zhou
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引用次数: 0

摘要

铀钼(U-Mo)合金在反应堆应用中面临着铝包层界面扩散的挑战。利用第一性原理计算,研究了钒(V)掺杂对U2Mo结构和热力学性质的影响。通过构建不同V比的U-Mo-V三元模型,我们证明了V通过d-f轨道杂化增强了结构稳定性和键合强度,同时降低了延展性。增加V含量提高了硬度和热稳定性,但降低了弹性各向异性。热力学分析揭示了高温下吉布斯自由能、热膨胀系数和热容的系统趋势。这些发现为v掺杂U2Mo的性能优化提供了重要见解,为设计具有更好的辐照抗性和热管理的先进核燃料提供了理论指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of V doping on the structural and thermodynamic properties of U2Mo: A first-principles study
Uranium-molybdenum (U-Mo) alloys face challenges in reactor applications due to interfacial diffusion with aluminum cladding. Using first-principles calculations, this study investigates how vanadium (V) doping influences U2Mo’s structural and thermodynamic properties. By constructing ternary U-Mo-V models with varying V ratios, we demonstrate that V enhances structural stability and bonding strength via d-f orbital hybridization while reducing ductility. Increasing V content elevates hardness and thermal stability but lowers elastic anisotropy. Thermodynamic analyses reveal systematic trends in Gibbs free energy, thermal expansion coefficients, and heat capacity under high temperatures. These findings provide critical insights into V-doped U2Mo’s performance optimization, offering theoretical guidance for designing advanced nuclear fuels with improved irradiation resistance and thermal management.
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来源期刊
Materials Science and Engineering: B
Materials Science and Engineering: B 工程技术-材料科学:综合
CiteScore
5.60
自引率
2.80%
发文量
481
审稿时长
3.5 months
期刊介绍: The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.
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