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Influence of Contact Area on Memristive Characteristics of Parylene-Based Structures in Single and Crossbar Geometry 接触面积对单条和交叉条几何结构中基于对二甲苯的膜特性的影响
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-27 DOI: 10.1134/S1063784224070430
B. S. Shvetsov, G. A. Iukliaevskikh, K. Yu. Chernoglazov, A. V. Emelyanov
{"title":"Influence of Contact Area on Memristive Characteristics of Parylene-Based Structures in Single and Crossbar Geometry","authors":"B. S. Shvetsov,&nbsp;G. A. Iukliaevskikh,&nbsp;K. Yu. Chernoglazov,&nbsp;A. V. Emelyanov","doi":"10.1134/S1063784224070430","DOIUrl":"10.1134/S1063784224070430","url":null,"abstract":"<p>The key elements of neuromorphic computing systems (NCS) are memristors—resistors with a memory effect—that can be used for simultaneous processing and storage of information. It is promising to create them in crossbar geometry, where memristors are located at the intersections of the transverse electrode buses. In this work, the influence of the area and geometry of contacts on the main memristive characteristics of parylene-based structures is investigated. The results obtained indicate the independence of such memristive characteristics as the switching voltage into the low-resistance (<i>U</i><sub>set</sub>) and high-resistance states (<i>U</i><sub>reset</sub>), as well as the resistance of the samples in the low-resistance (<i>R</i><sub>on</sub>) state, from the contact area. At the same time, resistances in the high-resistance (<i>R</i><sub>off</sub>) state increase with decreasing area, which confirms the single-filament model of resistive switching, and also makes it possible to increase the window of resistance in such structures.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2127 - 2132"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Project of X-Ray Optical Scheme of a Lithograph with a Transmissive Dynamic Mask and a Synchrotron Radiation Source 带有透射式动态掩膜和同步辐射源的平版印刷机 X 射线光学方案项目
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-27 DOI: 10.1134/S1063784224070272
I. V. Malyshev, N. I. Chkhalo, S. N. Yakunin
{"title":"Project of X-Ray Optical Scheme of a Lithograph with a Transmissive Dynamic Mask and a Synchrotron Radiation Source","authors":"I. V. Malyshev,&nbsp;N. I. Chkhalo,&nbsp;S. N. Yakunin","doi":"10.1134/S1063784224070272","DOIUrl":"10.1134/S1063784224070272","url":null,"abstract":"<p>The paper proposes an X-ray optical scheme of a lithograph with a transmissive dynamic mask and a synchrotron radiation source. The image of a dynamic mask in the form of holes of small diameter is transferred with a decrease to a plate with a resist using a Schwarzschild projection lens. The formation of a topological pattern will occur due to the coordinated operation of the system for scanning a plate with a resist and a microelectromechanical system of a transmissive type. Objectives with a reduction of 10 and 20 times for obtaining 10–20 nm images of 200 nm holes of the dynamic mask are considered. The scheme of illumination of the mask is calculated, which provides uniform illumination on a field of 10 × 10 mm<sup>2</sup>. For the synchrotron Siberia-2 of the KISI on a bending magnet, the expected productivity of the lithograph will be up to 1/14 of a plate with a diameter of 100 mm per hour.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2037 - 2044"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Combined Solid-State Closing Switch for High-Current Pulse Switching 用于大电流脉冲开关的组合式固态闭合开关
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-27 DOI: 10.1134/S106378422407034X
A. P. Orlov, P. I. Golyakov, Yu. V. Vlasov, P. B. Repin
{"title":"Combined Solid-State Closing Switch for High-Current Pulse Switching","authors":"A. P. Orlov,&nbsp;P. I. Golyakov,&nbsp;Yu. V. Vlasov,&nbsp;P. B. Repin","doi":"10.1134/S106378422407034X","DOIUrl":"10.1134/S106378422407034X","url":null,"abstract":"<p>The results of studies of a solid-state closing switch for a high-current pulse switching are presented. The experiments were carried out on a laboratory facility with a capacitive energy storage run down a discharge circuit with electrical-explosive opening switch (EEOS) by a current pulse with an amplitude ~450 kA. The discharge circuit consists of two sections separated by a branch with a solid-state closing switch. A metal foil of the EEOS can be located in an interelectrode gap of the closing switch. The operation of the EEOS leads to a breakdown of the insulation of the closing switch, as a result of which an effective shunting of the section of the discharge circuit containing the EEOS occurs. The developed combined solid-state closing switch in the future is capable of providing multi-channel switching of a high-current pulse to the load synchronously with the EEOS operation.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2074 - 2078"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Substrates for Soft X-Ray Microscopy Based on Si3N4 Membranes 基于 Si3N4 薄膜的软 X 射线显微镜基片
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-27 DOI: 10.1134/S1063784224070375
D. G. Reunov, N. S. Gusev, M. S. Mikhailenko, D. V. Petrova, I. V. Malyshev, N. I. Chkhalo
{"title":"Substrates for Soft X-Ray Microscopy Based on Si3N4 Membranes","authors":"D. G. Reunov,&nbsp;N. S. Gusev,&nbsp;M. S. Mikhailenko,&nbsp;D. V. Petrova,&nbsp;I. V. Malyshev,&nbsp;N. I. Chkhalo","doi":"10.1134/S1063784224070375","DOIUrl":"10.1134/S1063784224070375","url":null,"abstract":"<p>Silicon nitride membranes were experimentally obtained as substrates for biological samples, which are examined using a microscope with an operating wavelength of 13.8 nm. The free-hanging films obtained have a size of up to 1.5 × 1.5 mm<sup>2</sup>, which makes it possible to select an area of interest for investigation on the sample on the order of tens to hundreds of microns. The mechanical strength of the membranes satisfies that the samples do not tear the membranes and withstand transportation. The results obtained are an import-substituting technology for the manufacture of Si<sub>3</sub>N<sub>4</sub> membranes. The resulting membranes have a transparency of more than 40% in the range of the “water transparency window” (2.3–4.4 nm) and EUV (13–15 nm). The developed technology will become the basis for creating cuvettes for living biological samples for soft X-ray microscopy studies.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2098 - 2102"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Damage Resistance of Corundum Treated with Abrasive and Contact-Free Processing 经磨蚀和无接触加工处理的刚玉的抗损伤性
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-27 DOI: 10.1134/S1063784224070417
I. P. Shcherbakov, M. F. Kirienko, L. V. Tikhonova, A. E. Chmel
{"title":"Damage Resistance of Corundum Treated with Abrasive and Contact-Free Processing","authors":"I. P. Shcherbakov,&nbsp;M. F. Kirienko,&nbsp;L. V. Tikhonova,&nbsp;A. E. Chmel","doi":"10.1134/S1063784224070417","DOIUrl":"10.1134/S1063784224070417","url":null,"abstract":"<p>The planishing of the surface of solids is aimed to minimize its roughness, downgrade a content of larger cracks in the modified layer, and, in general, reduce a thickness of the latter one. However, the abrasive processing induces residual stresses in the surface layer. The stresses relax through the motion of dislocations but in superhard materials like corundum or silicon dioxide, is extremely limited. In the present work, the role of the modified surface layer in corundum was studied within the context of the method and regime choice which affect the surface processing the mechanical characteristics of corundum. An efficiency of the abrasive treatment was assessed by comparison with the properties of surfaces processed with the ion polishing, sheared surface, and natural face of crystal from the viewpoint of reaching the high mechanical damage resistance of the surface.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2118 - 2122"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Localization and Charge State of Metal Ions in Carbon Nanostructures of Europium Bis-Phthalocyanine Pyrolysed Derivatives 铕双酞菁热解衍生物碳纳米结构中金属离子的定位和电荷状态
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-27 DOI: 10.1134/S1063784224070223
V. S. Kozlov, V. G. Semenov, A. A. Bykov, V. Yu. Bairamukov
{"title":"Localization and Charge State of Metal Ions in Carbon Nanostructures of Europium Bis-Phthalocyanine Pyrolysed Derivatives","authors":"V. S. Kozlov,&nbsp;V. G. Semenov,&nbsp;A. A. Bykov,&nbsp;V. Yu. Bairamukov","doi":"10.1134/S1063784224070223","DOIUrl":"10.1134/S1063784224070223","url":null,"abstract":"<p>In the experiments of Mössbauer spectroscopy, transmission electron microscopy (TEM) and atomic force microscopy (AFM) the morphology and structurization of the carbon phase, the charge state of europium and the dynamic properties of europium bis-phthalocyanine pyrolysed derivatives, including the Debye temperature, were revealed. It was found that the pyrolysis of europium bis-pthalocyanine resulted in the amorphous carbon matrix and nanoscaled graphene clusters both forming turbostratic carbon phase. The europium ions in the charge state Eu<sup>3+</sup>/Eu<sup>2+</sup> were detected. The data indicated that localization of Eu ions took place between layers of graphenes similar to graphite intercalation compounds. It was shown that an isomeric shift, linewidths and the magnitude of the resonant absorption are essential characteristics of structural transformations at the pyrolysis of rare earth bis-phthalocyanines.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2007 - 2013"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Features of the Course of the Solid-State Reactions in a Sn/Fe/Cu Trilayer Film System 锡/铁/铜三层薄膜体系固态反应过程的特点
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-27 DOI: 10.1134/S1063784224070041
Yu. Yu. Balashov, V. G. Myagkov, L. E. Bykova, M. N. Volochaev, V. S. Zhigalov, A. A. Matsynin, K. A. Galushka, G. N. Bondarenko, S. V. Komogortsev
{"title":"Features of the Course of the Solid-State Reactions in a Sn/Fe/Cu Trilayer Film System","authors":"Yu. Yu. Balashov,&nbsp;V. G. Myagkov,&nbsp;L. E. Bykova,&nbsp;M. N. Volochaev,&nbsp;V. S. Zhigalov,&nbsp;A. A. Matsynin,&nbsp;K. A. Galushka,&nbsp;G. N. Bondarenko,&nbsp;S. V. Komogortsev","doi":"10.1134/S1063784224070041","DOIUrl":"10.1134/S1063784224070041","url":null,"abstract":"<p>Study of the mechanisms of the solid-state reactions in Sn/Fe/Cu thin films is interesting both from a fundamental point of view and from a view of the importance of emerging intermetallics in the technology of solder joints and thin-film lithium-ion batteries. By the integrated approach, including both X-ray phase analysis and local elemental analysis of the cross-sections of the films, the phase composition and the mutual arrangement of phases were studied, at various stages of the solid-state reaction occurring at different temperatures. The observed sequence of the appearing phases differs significantly from the expected one if the mass transfer took place by a volume diffusion through the forming layers.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"1893 - 1897"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414434","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Investigation of the Diode Properties of a Double Layer of a Combined Gas Discharge 联合气体放电双层二极管特性研究
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-27 DOI: 10.1134/S1063784224070090
B. M. Brzhozovskii, M. B. Brovkova, S. G. Gestrin, E. P. Zinina, V. V. Martynov
{"title":"An Investigation of the Diode Properties of a Double Layer of a Combined Gas Discharge","authors":"B. M. Brzhozovskii,&nbsp;M. B. Brovkova,&nbsp;S. G. Gestrin,&nbsp;E. P. Zinina,&nbsp;V. V. Martynov","doi":"10.1134/S1063784224070090","DOIUrl":"10.1134/S1063784224070090","url":null,"abstract":"<p>The paper shows that upon ignition of the combined gas discharge in the resonator chamber, there appears a double layer with diode properties that consists of layers of positive and negative charges surrounding the workpiece. An increase in the level of microwave power supplied to the chamber leads to a decrease in the equivalent diode resistance in open and closed modes and an increase in the current flowing through the unit. The ions of the process gas (nitrogen or argon) ionized by the microwave field fall on the product surface and diffuse into it as a result of the thermal diffusion process, which hardens the surface layer. The product is heated when a positive bias potential is applied to it by a stream of high-energy electrons arriving at the surface and accelerated to energies of tens and hundreds eV in the discharge acceleration zone. Ion-plasma implantation leads to a significant increase in the strength, wear resistance and corrosion resistance of the surface of the processed product.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"1921 - 1932"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spall Strength of Polycarbonate at a Temperature of 20–185°C 聚碳酸酯在 20-185°C 温度下的剥落强度
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-27 DOI: 10.1134/S1063784224070119
I. A. Cherepanov, A. S. Savinykh, G. V. Garkushin, S. V. Razorenov
{"title":"Spall Strength of Polycarbonate at a Temperature of 20–185°C","authors":"I. A. Cherepanov,&nbsp;A. S. Savinykh,&nbsp;G. V. Garkushin,&nbsp;S. V. Razorenov","doi":"10.1134/S1063784224070119","DOIUrl":"10.1134/S1063784224070119","url":null,"abstract":"<p>The results of the measurements of spall strength of polycarbonate at a maximum compression stress of 0.6 GPa in the initial temperature range of 20–185°C are presented. It has been found a significant decrease in the spall strength when the polycarbonate reached the glass transition temperature. The strain rates in the plastic compression wave are determined depending on the maximum stress under single and stepwise shock compression. The dependences of the shock wave velocity <i>U</i><sub>s</sub>—mass velocity up in the range of maximum shock compression stresses up to 0.8 GPa at different temperatures are constructed.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"1938 - 1944"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Observation of Astrophysical Objects with the TAIGA–HiSCORE Installation 利用 TAIGA-HiSCORE 装置观测天体
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-27 DOI: 10.1134/S1063784224070405
V. S. Samoliga
{"title":"Observation of Astrophysical Objects with the TAIGA–HiSCORE Installation","authors":"V. S. Samoliga","doi":"10.1134/S1063784224070405","DOIUrl":"10.1134/S1063784224070405","url":null,"abstract":"<p>This paper presents the results of the sky survey with the TAIGA–HiSCORE installation, an array of 120 wide-angle Cherenkov light detectors spread over an area of 1 km<sup>2</sup>. Data analysis is made for 2 winter seasons (2019–2021) at cosmic ray energies above 200–500 TeV. A modified method of background estimation is tested. Signal significance is estimated using classical Li-Ma method.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2115 - 2117"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414565","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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