B. S. Shvetsov, G. A. Iukliaevskikh, K. Yu. Chernoglazov, A. V. Emelyanov
{"title":"接触面积对单条和交叉条几何结构中基于对二甲苯的膜特性的影响","authors":"B. S. Shvetsov, G. A. Iukliaevskikh, K. Yu. Chernoglazov, A. V. Emelyanov","doi":"10.1134/S1063784224070430","DOIUrl":null,"url":null,"abstract":"<p>The key elements of neuromorphic computing systems (NCS) are memristors—resistors with a memory effect—that can be used for simultaneous processing and storage of information. It is promising to create them in crossbar geometry, where memristors are located at the intersections of the transverse electrode buses. In this work, the influence of the area and geometry of contacts on the main memristive characteristics of parylene-based structures is investigated. The results obtained indicate the independence of such memristive characteristics as the switching voltage into the low-resistance (<i>U</i><sub>set</sub>) and high-resistance states (<i>U</i><sub>reset</sub>), as well as the resistance of the samples in the low-resistance (<i>R</i><sub>on</sub>) state, from the contact area. At the same time, resistances in the high-resistance (<i>R</i><sub>off</sub>) state increase with decreasing area, which confirms the single-filament model of resistive switching, and also makes it possible to increase the window of resistance in such structures.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2127 - 2132"},"PeriodicalIF":1.1000,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of Contact Area on Memristive Characteristics of Parylene-Based Structures in Single and Crossbar Geometry\",\"authors\":\"B. S. Shvetsov, G. A. Iukliaevskikh, K. Yu. Chernoglazov, A. V. Emelyanov\",\"doi\":\"10.1134/S1063784224070430\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The key elements of neuromorphic computing systems (NCS) are memristors—resistors with a memory effect—that can be used for simultaneous processing and storage of information. It is promising to create them in crossbar geometry, where memristors are located at the intersections of the transverse electrode buses. In this work, the influence of the area and geometry of contacts on the main memristive characteristics of parylene-based structures is investigated. The results obtained indicate the independence of such memristive characteristics as the switching voltage into the low-resistance (<i>U</i><sub>set</sub>) and high-resistance states (<i>U</i><sub>reset</sub>), as well as the resistance of the samples in the low-resistance (<i>R</i><sub>on</sub>) state, from the contact area. At the same time, resistances in the high-resistance (<i>R</i><sub>off</sub>) state increase with decreasing area, which confirms the single-filament model of resistive switching, and also makes it possible to increase the window of resistance in such structures.</p>\",\"PeriodicalId\":783,\"journal\":{\"name\":\"Technical Physics\",\"volume\":\"69 7\",\"pages\":\"2127 - 2132\"},\"PeriodicalIF\":1.1000,\"publicationDate\":\"2024-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063784224070430\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1063784224070430","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
Influence of Contact Area on Memristive Characteristics of Parylene-Based Structures in Single and Crossbar Geometry
The key elements of neuromorphic computing systems (NCS) are memristors—resistors with a memory effect—that can be used for simultaneous processing and storage of information. It is promising to create them in crossbar geometry, where memristors are located at the intersections of the transverse electrode buses. In this work, the influence of the area and geometry of contacts on the main memristive characteristics of parylene-based structures is investigated. The results obtained indicate the independence of such memristive characteristics as the switching voltage into the low-resistance (Uset) and high-resistance states (Ureset), as well as the resistance of the samples in the low-resistance (Ron) state, from the contact area. At the same time, resistances in the high-resistance (Roff) state increase with decreasing area, which confirms the single-filament model of resistive switching, and also makes it possible to increase the window of resistance in such structures.
期刊介绍:
Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.