Influence of Contact Area on Memristive Characteristics of Parylene-Based Structures in Single and Crossbar Geometry

IF 1.1 4区物理与天体物理 Q4 PHYSICS, APPLIED

Technical Physics Pub Date : 2024-09-27 DOI:10.1134/S1063784224070430

B. S. Shvetsov, G. A. Iukliaevskikh, K. Yu. Chernoglazov, A. V. Emelyanov

{"title":"Influence of Contact Area on Memristive Characteristics of Parylene-Based Structures in Single and Crossbar Geometry","authors":"B. S. Shvetsov, G. A. Iukliaevskikh, K. Yu. Chernoglazov, A. V. Emelyanov","doi":"10.1134/S1063784224070430","DOIUrl":null,"url":null,"abstract":"The key elements of neuromorphic computing systems (NCS) are memristors—resistors with a memory effect—that can be used for simultaneous processing and storage of information. It is promising to create them in crossbar geometry, where memristors are located at the intersections of the transverse electrode buses. In this work, the influence of the area and geometry of contacts on the main memristive characteristics of parylene-based structures is investigated. The results obtained indicate the independence of such memristive characteristics as the switching voltage into the low-resistance (Uset) and high-resistance states (Ureset), as well as the resistance of the samples in the low-resistance (Ron) state, from the contact area. At the same time, resistances in the high-resistance (Roff) state increase with decreasing area, which confirms the single-filament model of resistive switching, and also makes it possible to increase the window of resistance in such structures.","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2127 - 2132"},"PeriodicalIF":1.1000,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Physics","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1063784224070430","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

Abstract

The key elements of neuromorphic computing systems (NCS) are memristors—resistors with a memory effect—that can be used for simultaneous processing and storage of information. It is promising to create them in crossbar geometry, where memristors are located at the intersections of the transverse electrode buses. In this work, the influence of the area and geometry of contacts on the main memristive characteristics of parylene-based structures is investigated. The results obtained indicate the independence of such memristive characteristics as the switching voltage into the low-resistance (U_set) and high-resistance states (U_reset), as well as the resistance of the samples in the low-resistance (R_on) state, from the contact area. At the same time, resistances in the high-resistance (R_off) state increase with decreasing area, which confirms the single-filament model of resistive switching, and also makes it possible to increase the window of resistance in such structures.

Abstract Image

查看原文本刊更多论文

接触面积对单条和交叉条几何结构中基于对二甲苯的膜特性的影响

神经形态计算系统（NCS）的关键元件是具有记忆效应的忆阻器，可用于同时处理和存储信息。在横向电极母线的交叉点上安装忆阻器，以横杆几何形状制造这种系统是很有前途的。在这项工作中，研究了接触面积和几何形状对基于对二甲苯结构的主要忆阻器特性的影响。研究结果表明，在低电阻（Uset）和高电阻（Ureset）状态下的开关电压以及低电阻（Ron）状态下样品的电阻等记忆特性与接触面积无关。同时，高阻（Roff）状态下的电阻会随着面积的减小而增大，这证实了电阻开关的单丝模型，也使得在这种结构中增大电阻窗口成为可能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Technical Physics 物理-物理：应用

CiteScore

1.30

自引率

14.30%

发文量

139

审稿时长

3-6 weeks

期刊介绍： Technical Physics is a journal that contains practical information on all aspects of applied physics, especially instrumentation and measurement techniques. Particular emphasis is put on plasma physics and related fields such as studies of charged particles in electromagnetic fields, synchrotron radiation, electron and ion beams, gas lasers and discharges. Other journal topics are the properties of condensed matter, including semiconductors, superconductors, gases, liquids, and different materials.