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Dispersion Elements for X-ray Mirror Spectrometer on a Range of 7–30 nm 用于 7-30 纳米范围 X 射线镜面光谱仪的色散元件
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-26 DOI: 10.1134/S1063784224060136
S. A. Garakhin, A. Yu. Lopatin, A. N. Nechay, A. A. Perekalov, A. E. Pestov, N. N. Salashchenko, N. N. Tsybin, N. I. Chkhalo
{"title":"Dispersion Elements for X-ray Mirror Spectrometer on a Range of 7–30 nm","authors":"S. A. Garakhin,&nbsp;A. Yu. Lopatin,&nbsp;A. N. Nechay,&nbsp;A. A. Perekalov,&nbsp;A. E. Pestov,&nbsp;N. N. Salashchenko,&nbsp;N. N. Tsybin,&nbsp;N. I. Chkhalo","doi":"10.1134/S1063784224060136","DOIUrl":"10.1134/S1063784224060136","url":null,"abstract":"<p>Multilayer interference structures acting as dispersion elements for a mirror spectrometer for a wavelength range of 7–30 nm have been calculated and synthesized. Three elements are implemented: for the range λ = 7–12 nm – multilayer structure Mo/B<sub>4</sub>C (number of periods <i>N</i> = 60, period thickness <i>d</i> = 6<i>.</i>5 nm); for the range λ = 11–18 nm – Mo/Be (<i>N</i> = 50; <i>d</i> = 9<i>.</i>83 nm) and for the range λ = 17–30 nm – Be/Si/Al (<i>N</i> = 40; <i>d</i> = 18<i>.</i>2 nm). For the entire spectral range, an efficiency of more than 10% was obtained at a wavelength resolution of 0<i>.</i>15–1<i>.</i>0 nm.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1568 - 1574"},"PeriodicalIF":1.1,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142413897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Theory of Quasi-Static Magnetoelectric Interaction in Three-Layer Asymmetric Piezomagnetostrictive Structures 三层不对称压磁致伸缩结构中的准静态磁电相互作用理论
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-26 DOI: 10.1134/S1063784224060112
D. A. Filippov, T. A. Galkina, I. N. Manicheva
{"title":"Theory of Quasi-Static Magnetoelectric Interaction in Three-Layer Asymmetric Piezomagnetostrictive Structures","authors":"D. A. Filippov,&nbsp;T. A. Galkina,&nbsp;I. N. Manicheva","doi":"10.1134/S1063784224060112","DOIUrl":"10.1134/S1063784224060112","url":null,"abstract":"<p>The work is devoted to the theoretical investigation of the quasi-static magnetoelectric interaction in three-layer structures consisting of a piezoelectric and two magnetic layers with positive and negative magnetostriction. Using the system of elasto- and electrostatics equations for the piezoelectric and magnetostrictive phases, expressions for the electrical response of the structure in a magnetic field are obtained. The contributions from longitudinal and bending deformations are taken into account in value of ME interactions. It is shown that the use of an asymmetric three-layer asymmetric structure leads to an increase in the magnitude of the ME interaction by almost an order of magnitude compared to a two-layer structure. The dependences of the effect magnitude on the thickness of the third layer for the nickel/lead zirconate titanate/metglas structure are presented.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1548 - 1554"},"PeriodicalIF":1.1,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Thermal Annealing on Properties Ga2O3/GaAs:Cr Heterostructures 热退火对 Ga2O3/GaAs:Cr 异质结构特性的影响
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-26 DOI: 10.1134/S106378422406015X
V. M. Kalygina, O. S. Kiseleva, V. V. Kopyev, B. O. Kushnarev, V. L. Oleinik, Y. S. Petrova, A. V. Tsymbalov
{"title":"Effect of Thermal Annealing on Properties Ga2O3/GaAs:Cr Heterostructures","authors":"V. M. Kalygina,&nbsp;O. S. Kiseleva,&nbsp;V. V. Kopyev,&nbsp;B. O. Kushnarev,&nbsp;V. L. Oleinik,&nbsp;Y. S. Petrova,&nbsp;A. V. Tsymbalov","doi":"10.1134/S106378422406015X","DOIUrl":"10.1134/S106378422406015X","url":null,"abstract":"<p>Data on the sensitivity of Ga<sub>2</sub>O<sub>3</sub>/GaAs:Cr heterostructures are presented to long-wave and UV (λ = 254 nm) radiation. The samples were obtained by RF magnetron sputtering of a gallium oxide film on non-heated GaAs:Cr substrates. Gallium arsenide plates with a Ga<sub>2</sub>O<sub>3</sub> film were divided into two parts: one half was not annealed, and the other was annealed in argon at 500°C for 30 min. Regardless of the presence or absence of heat treatment, the studied structures exhibit a photovoltaic effect and are able to operate in an autonomous mode. It is shown that a noticeable sensitivity to long-wave radiation appears in the samples only after thermal annealing of gallium oxide films. The response and recovery times of such UV radiation detectors do not exceed 1 second.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1584 - 1589"},"PeriodicalIF":1.1,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142413891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Runaway Electrons in a Gas Diode with a Wedge-Shaped Cathode 带有楔形阴极的气体二极管中的失控电子
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-26 DOI: 10.1134/S1063784224060495
N. M. Zubarev, O. V. Zubareva, M. I. Yalandin
{"title":"Runaway Electrons in a Gas Diode with a Wedge-Shaped Cathode","authors":"N. M. Zubarev,&nbsp;O. V. Zubareva,&nbsp;M. I. Yalandin","doi":"10.1134/S1063784224060495","DOIUrl":"10.1134/S1063784224060495","url":null,"abstract":"<p>The features of electron runaway in a gas diode with a wedge-shaped cathode providing a sharply inhomogeneous distribution of the electric field in the interelectrode gap are studied. It is shown that the character and conditions of runaway are qualitatively different for wedges with relatively large and small opening angles, i.e., in fact, for different degrees of field inhomogeneity. In the first case, the transition to the runaway mode is determined by the behavior of electrons in the immediate vicinity of their starting point, the vertex of the wedge-shaped cathode. For a wedge close in shape to a blade (opening angle less than 30° degrees), the relative contribution of the braking force for electrons in the gas increases with distance from the cathode, and their behavior at the periphery, near the anode, begins to play a key role in the analysis of runaway conditions. The influence of an external magnetic field on the geometry of the ionized region near the wedge vertex, starting from which the electrons become runaways, is also discussed.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1846 - 1856"},"PeriodicalIF":1.1,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142413997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Influence of Space Curvature on the Moment of Inertia Tensor of Axisymmetric Magnetic Field of Radiopulsar 空间曲率对辐射脉冲星轴对称磁场惯性矩张量的影响
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-26 DOI: 10.1134/S1063784224060288
A. A. Matevosyan, D. P. Barsukov
{"title":"The Influence of Space Curvature on the Moment of Inertia Tensor of Axisymmetric Magnetic Field of Radiopulsar","authors":"A. A. Matevosyan,&nbsp;D. P. Barsukov","doi":"10.1134/S1063784224060288","DOIUrl":"10.1134/S1063784224060288","url":null,"abstract":"<p>The influence of space curvature on input of magnetic field outside neutron star to moment of inertia tensor of radiopulsar in case of Shwartzshild metric is considered. It is considered both the case of pure dipolar magnetic field and the case of “small scale” magnetic field but only in the case of a single axisymmetric harmonic.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1679 - 1682"},"PeriodicalIF":1.1,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Effect of Paired Collisions of Charge Carriers on Electrical Conductivity thin Conductive Layer 电荷载体成对碰撞对导电薄层电导率的影响
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-26 DOI: 10.1134/S1063784224060483
E. V. Zavitaev, O. V. Rusakov, E. P. Chukhleb
{"title":"The Effect of Paired Collisions of Charge Carriers on Electrical Conductivity thin Conductive Layer","authors":"E. V. Zavitaev,&nbsp;O. V. Rusakov,&nbsp;E. P. Chukhleb","doi":"10.1134/S1063784224060483","DOIUrl":"10.1134/S1063784224060483","url":null,"abstract":"<p>For the first time, the problem of the effect of pair collisions of charge carriers on the electrical conductivity of a thin conducting layer was solved analytically. Permissible values of the layer thickness are limited by the dimensions at which quantum and skin effects do not appear. However, the ratio of the layer thickness to the free path of electrons can be arbitrary. The conditions of specular-diffuse reflection of charge carriers from the layer surfaces are taken as the boundary conditions of the problem. Limiting cases are considered and the results obtained are discussed.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1837 - 1845"},"PeriodicalIF":1.1,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Electrical Resistivity, Seebeck Coefficient, and Hall Coefficient of Pure Thallium at 100−550 K 100-550 K 时纯铊的电阻率、塞贝克系数和霍尔系数
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-26 DOI: 10.1134/S1063784224060057
A. T. Burkov, P. P. Konstantinov
{"title":"Electrical Resistivity, Seebeck Coefficient, and Hall Coefficient of Pure Thallium at 100−550 K","authors":"A. T. Burkov,&nbsp;P. P. Konstantinov","doi":"10.1134/S1063784224060057","DOIUrl":"10.1134/S1063784224060057","url":null,"abstract":"<p>Electrical resistivity, Seebeck coefficient and Hall coefficient of pure thallium were measured at temperatures from 100 to 550 K, i.e. almost to the melting temperature of this metal. The history of the experiemental investigations of the transport properties of Tl is shortly reviewed. This is a first publication of the experimental data on the Seebeck coefficient and the Hall coefficient of Tl in such a broad temperature range.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1510 - 1513"},"PeriodicalIF":1.1,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142413898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Determination of the Band Structure and Conductivity of the Si@O@Al Nanocomposite 确定 Si@O@Al 纳米复合材料的带状结构和电导率
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-26 DOI: 10.1134/S1063784224060379
A. S. Rudy, A. B. Churilov, S. V. Kurbatov, A. A. Mironrenko, V. V. Naumov, E. A. Kozlov
{"title":"Determination of the Band Structure and Conductivity of the Si@O@Al Nanocomposite","authors":"A. S. Rudy,&nbsp;A. B. Churilov,&nbsp;S. V. Kurbatov,&nbsp;A. A. Mironrenko,&nbsp;V. V. Naumov,&nbsp;E. A. Kozlov","doi":"10.1134/S1063784224060379","DOIUrl":"10.1134/S1063784224060379","url":null,"abstract":"<p>The purpose of this work is to study the characteristics of the junction between the titanium down conductor of a thin-film solid-state lithium-ion battery (<i>a</i>-Si) and a negative Si@O@Al nanocomposite electrode. The results of measuring the band gap of the Si@O@Al nanocomposite and the height of the Schottky barrier of the Ti–Si@O@Al junction are presented. The transmission and reflection spectra of Si@O@Al films and its main phases <i>a</i>-Si, <i>a</i>-SiO<sub><i>x</i></sub>, and <i>a</i>-Si(Al<sub><i>x</i></sub>) are studied. The band gap of Si@O@Al was determined by the Tauc method, which is 1.52 eV for <i>a</i>-Si and 1.15 eV for nc-Si. The IV characteristics of Ti‒Si@O@Al, Ti–<i>a</i>-Si, Ti–<i>a</i>-SiO<sub>0.8</sub>, and Ti–<i>a</i>-Si<sub>0.9</sub>(Al<sub>0.1</sub>) structures have been studied and the height of the Schottky barrier has been determined. The results obtained make it possible to estimate the Fermi energy of the nanocomposite and to interpret the hike in the SSLIB charging voltage as a result of the Al acceptor impurity compensation during lithiation. A change in the majority charge carriers in Si@O@Al leads to a decrease in the hole current and an increase in the density of the over-barrier electron current, as a result of which a step with a height of 1.5 V is formed on the charging curve.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1753 - 1764"},"PeriodicalIF":1.1,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142413978","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Physical and Chemical Principles of Pulsed Microplasma Formation of Micron-Precision Oxide Coatings 脉冲微等离子体形成微米精度氧化涂层的物理和化学原理
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-26 DOI: 10.1134/S1063784224060252
A. I. Mamaev, V. A. Mamaeva, Yu. N. Bespalova
{"title":"Physical and Chemical Principles of Pulsed Microplasma Formation of Micron-Precision Oxide Coatings","authors":"A. I. Mamaev,&nbsp;V. A. Mamaeva,&nbsp;Yu. N. Bespalova","doi":"10.1134/S1063784224060252","DOIUrl":"10.1134/S1063784224060252","url":null,"abstract":"<p>The main factors influencing the parameters of pulsed microplasma oxidation and the mode of motion of the electrolyte in hydrodynamic boundary layers on the physics and chemistry of microplasma processes in aqueous solutions of electrolytes are determined. As a result of mathematical modeling of microplasma processes, an equation was obtained that relates oxidation parameters, electrolyte characteristics, spatial parameters, thickness of the porous oxide layer and discharge burning duration. The influence of viscosity and mode of motion of the electrolyte on the current-voltage characteristics, reflection spectra and surface structure of coatings is shown. It has been proven that pulsed microplasma oxidation at short voltage pulse durations makes it possible to control the characteristics of the coating and create micron-precise porous structures of a given structure.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1656 - 1669"},"PeriodicalIF":1.1,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stratification of the Fe/Si(001)2 × 1 Interface by Heat Treatment of the Wetting Layer 通过对润湿层进行热处理分层铁/硅（001）2 × 1界面
IF 1.1 4区 物理与天体物理
Technical Physics Pub Date : 2024-09-26 DOI: 10.1134/S1063784224060331
N. I. Plusnin
{"title":"Stratification of the Fe/Si(001)2 × 1 Interface by Heat Treatment of the Wetting Layer","authors":"N. I. Plusnin","doi":"10.1134/S1063784224060331","DOIUrl":"10.1134/S1063784224060331","url":null,"abstract":"<p>The study was carried out by LEED, AES, EELS, and AFM methods. Films of Fe/Si(001)2 × 1 were obtained at substrate temperatures of 30°C and source temperatures of 1250°C. Wetting layer (WL) Fe on Si(001)2 × 1 was formed by two-stage annealing at temperatures and thicknesses of 500 and 250°C and 1 monolayer (ML) and 3 ML, respectively. Analysis and interpretation of the data obtained, taking into account possible reaction patterns, showed that after annealing at 1 ML thickness, the Fe composition corresponded to 2 ML Si/Fe. Further, at 2 ML, it changed to Fe/Si/Fe, at 3 ML, it changed to Fe–FeSi, and after annealing, to FeSi. At 4 ML, there was formation of FeSi/FeSi<sub>2</sub> film. And, further, at 7 ML and 10 ML, the composition of the films became Fe<sub>3</sub>Si/FeSi<sub>2</sub> and, respectively, Fe/Fe<sub>3</sub>Si/FeSi<sub>2</sub>. At the same time, the upper Fe<sub>3</sub>Si layers were coated with 0.6 ML and the Fe layers with 0.3 ML of segregated Si atoms, which number increased, after annealing at 250°C, to 0.6 ML in the latter case. In the obtained Fe film, the size and average grain height were 10−20 nm and, respectively, ∼0<i>.</i>4 nm.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 6","pages":"1717 - 1726"},"PeriodicalIF":1.1,"publicationDate":"2024-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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