Nonlinear Diagnostics of Semiconductors by Multifrequency Radiation at Low Temperatures

Abstract

Diagnostics of semiconductors by multi-frequency irradiation is a fairly effective way to determine all possible parameters of the samples. It is shown that, when a semiconductor sample cooled to low temperatures is irradiated by multi-frequency electromagnetic radiation, several variants of nonlinear scattering in the crystal plasma are possible. Nonlinear interaction of incident and reflected light waves in the region where the plasma flow velocity is close to the speed of sound can significantly reduce the efficiency of using multi-frequency pumping for deep diagnostics of semiconductor crystals with a narrow band gap at low temperatures.