Technical PhysicsPub Date : 2024-09-27DOI: 10.1134/S1063784224070363
K. E. Prikhodko, M. M. Dement’eva
{"title":"Application of Transmission Electron Microscopy for the Study of a Functional Nanoelement","authors":"K. E. Prikhodko, M. M. Dement’eva","doi":"10.1134/S1063784224070363","DOIUrl":"10.1134/S1063784224070363","url":null,"abstract":"<p>Using the focused ion beam probe method, cross-section sample of a single functional device of micron dimensions were cut out for STEM and TEM studies. The use of analytical methods of transmission electron microscopy made it possible to obtain accurate data on the geometric parameters of nanoscale functional devices, the phase and elemental composition of functional element material, as well as on the concentration of free electrons at the Fermi level in the nanoelement material.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2093 - 2097"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Technical PhysicsPub Date : 2024-09-27DOI: 10.1134/S1063784224070387
A. A. Ryabko, S. S. Nalimova, N. V. Permyakov, A. A. Bobkov, A. I. Maksimov, V. M. Kondratev, K. P. Kotlyar, M. K. Ovezov, A. S. Komolov, E. F. Lazneva, V. A. Moshnikov, A. N. Aleshin
{"title":"Architectonics of Zinc Oxide Nanorod Coatings for Adsorption Gas Sensors","authors":"A. A. Ryabko, S. S. Nalimova, N. V. Permyakov, A. A. Bobkov, A. I. Maksimov, V. M. Kondratev, K. P. Kotlyar, M. K. Ovezov, A. S. Komolov, E. F. Lazneva, V. A. Moshnikov, A. N. Aleshin","doi":"10.1134/S1063784224070387","DOIUrl":"10.1134/S1063784224070387","url":null,"abstract":"<p>A method for the formation of nanostractured coatings from ZnO nanorods for use in adsorption gas sensors is presented. It has been shown that ultrasonic spray pyrolysis provides the formation of local growth centers for the formation of ZnO nanorods by the low-temperature hydrothermal synthesis. The obtained ZnO nanorods with a small diameter demonstrate a high concentration of oxygen vacancies in the near-surface region of the nanorods and a high surface concentration of hydroxyl groups. An additional method is proposed for testing seed layers by resistance using a liquid probe based on an indium-gallium melt without the need to apply top contacts. The presented technique is suitable for mass production of sensor coatings. The obtained nanostructured coatings from ZnO nanorods demonstrate a high gas analytical response.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2103 - 2110"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Technical PhysicsPub Date : 2024-09-27DOI: 10.1134/S1063784224070296
V. V. Manukhin
{"title":"Calculation of the Component Composition of the Surface Layers of Titanium Carbide Sputtered with Light Ions","authors":"V. V. Manukhin","doi":"10.1134/S1063784224070296","DOIUrl":"10.1134/S1063784224070296","url":null,"abstract":"<p>On the basis of the previously tested model of sputtering binary layered inhomogeneous targets with light ions, a method for calculating the component composition of the surface layers of titanium carbide under stationary (stoichiometric) sputtering with light ions is proposed. The results of calculations of the component composition of the altered surface layer of titanium carbide are given in comparison with experimental data and the results of computer simulation. The proposed method for calculating the component composition based on the model of sputtering binary layered inhomogeneous targets made it possible to estimate the thickness of the changed surface layer. The proposed calculation method allows developing a technology for creating titanium carbide surfaces with a given ratio of components.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2049 - 2052"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Technical PhysicsPub Date : 2024-09-27DOI: 10.1134/S1063784224070399
A. A. Samokhvalov, K. A. Sergushichev, S. I. Eliseev, T. P. Bronzov, E. P. Bolshakov, D. V. Getman, A. A. Smirnov
{"title":"Investigation of the Emission Spectrum of a Fast Capillary Discharge in the “Water Window” Region","authors":"A. A. Samokhvalov, K. A. Sergushichev, S. I. Eliseev, T. P. Bronzov, E. P. Bolshakov, D. V. Getman, A. A. Smirnov","doi":"10.1134/S1063784224070399","DOIUrl":"10.1134/S1063784224070399","url":null,"abstract":"<p>The results of experiments on the generation of soft X-ray pulses in the “water window” region performed on a compact gas-discharge source are presented. The parameters of the radiation source were optimized based on the condition of reducing the intensity of capillary wall ablation and obtaining the maximum intensity of the helium-like nitrogen ion N VI—2.88 nm. The obtained results can be used in the development of a microscope for the tasks of cell microscopy with nanometer resolution.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2111 - 2114"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Technical PhysicsPub Date : 2024-09-27DOI: 10.1134/S1063784224070181
A. G. Isaev, O. O. Permiakova, A. E. Rogozhin
{"title":"Investigation of the Filament Properties in the HfO2-Based Structures Using Conductive Atomic Force Microscopy","authors":"A. G. Isaev, O. O. Permiakova, A. E. Rogozhin","doi":"10.1134/S1063784224070181","DOIUrl":"10.1134/S1063784224070181","url":null,"abstract":"<p>The results of the research on the resistive switching in Pt/HfO<sub>2</sub>/HfO<sub><i>x</i></sub>N<sub><i>y</i></sub>/TiN, Pt/HfO<sub>2</sub>/TaO<sub><i>x</i></sub>N<sub><i>y</i></sub>/TiN and Pt/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/TaO<sub><i>x</i></sub>N<sub><i>y</i></sub>/TiN structures are presented. Active layers of the structures were deposited by atomic layer deposition. The formation of conductive filaments in all three structures was demonstrated using conductive atomic force microscopy. A full cycle of resistive switching with a microscope probe in these structures was also demonstrated. The properties of filaments formed at different voltages were studied, and the distributions of the filament density by conductivity and size were presented. The characteristics of the studied structures were compared. It appears that the Pt/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/TaO<sub><i>x</i></sub>N<sub><i>y</i></sub>/TiN structure has the greatest potential for resistive random-access memory application.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"1986 - 1993"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Technical PhysicsPub Date : 2024-09-27DOI: 10.1134/S1063784224070466
Ts. B. Sumyanova, V. R. Prizhilevskaya, N. E. Borisova
{"title":"Spectrophotometric Method for Studying the Stability of Late Lanthanide Complexes","authors":"Ts. B. Sumyanova, V. R. Prizhilevskaya, N. E. Borisova","doi":"10.1134/S1063784224070466","DOIUrl":"10.1134/S1063784224070466","url":null,"abstract":"<p>The results of studying the effect of the central metal ion on the stability of gadolinium and holmium complexes with 1,10'-phenanthroline-2,9-dicarboxylic acid diamide are presented. The obtained values of the stability constants of the complexes turned out to be an order of magnitude lower than the previously known values for the complexes of these elements with 4,7-dichloro-1,10'-phenanthroline-2,9-dicarboxylic acid diamide.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2149 - 2154"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Technical PhysicsPub Date : 2024-09-27DOI: 10.1134/S1063784224070442
A. V. Sitnikov, Yu. E. Kalinin, I. V. Babkina, A. E. Nikonov, M. N. Kopytin, L. I. Yanchenko, A. R. Shakurov
{"title":"Influence of Li Ions on Memristor Properties of Capacitor Structures Based on Nanocomposites (Co40Fe40B20)x(LiNbO3)100–x","authors":"A. V. Sitnikov, Yu. E. Kalinin, I. V. Babkina, A. E. Nikonov, M. N. Kopytin, L. I. Yanchenko, A. R. Shakurov","doi":"10.1134/S1063784224070442","DOIUrl":"10.1134/S1063784224070442","url":null,"abstract":"<p>The paper reveals the influence of Li, B and the composition of metal contacts on the processes of resistive switching in memristive structures M/NC/D/M. After field exposure in structures Cu/(Co<sub>50</sub>Fe<sub>50</sub>)<sub><i>x</i></sub>(LiNbO<sub>3</sub>)<sub>100–<i>x</i></sub>/s-LiNbO<sub>3</sub>/Cu/sitall, Cu/(Co<sub>50</sub>Fe<sub>50</sub>)<sub><i>x</i></sub>(LiNbO<sub>3</sub>)<sub>100–<i>x</i></sub>/d-LiNbO<sub>3</sub>/Cu/sitall and Cu/(Co<sub>40</sub>Fe<sub>40</sub>B<sub>20</sub>)<sub><i>x</i></sub>(SiO<sub>2</sub>)<sub>100–<i>x</i></sub>/d LiNbO<sub>3</sub>/Cu/sitall at <i>x</i> < 13 was detected a residual voltage (up to 16 mV) due to the electromigration of Li ions, that leading to a “reversible” type of VAC hysteresis and instability of the time dependencies of induced resistive states. In the structures of Cu/(Co<sub>40</sub>Fe<sub>40</sub>B<sub>20</sub>)<sub><i>x</i></sub>(LiNbO<sub>3</sub>)<sub>100–<i>x</i></sub>/s-LiNbO<sub>3</sub>/Cu/sitall, Cr/Cu/Cr/(Co<sub>40</sub>Fe<sub>40</sub>B<sub>20</sub>)<sub><i>x</i></sub>(LiNbO<sub>3</sub>)<sub>100–<i>x</i></sub>/s-LiNbO<sub>3</sub>/Cr/Cu/Cr/sitall containing B, the residual voltage is reduced by formation of chemical compounds B with percolated Li atoms. When limiting the electromigration of Li ions, the main mechanism of resistive switching is the processes of electromigration of oxygen vacancies in the dielectric oxide layer. Suppression of residual voltage in the Cr/Cu/Cr/(Co<sub>50</sub>Fe<sub>50</sub>)<sub><i>x</i></sub>(LiNbO<sub>3</sub>)<sub>100–<i>x</i></sub>/s-LiNbO<sub>3</sub>/Cr/Cu/Cr/sitall structure due to the introduction of a Cr buffer layer that does not dissolve Li leads to the absence of bipolar resistive switching in these structures.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2133 - 2140"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Technical PhysicsPub Date : 2024-09-27DOI: 10.1134/S1063784224070028
A. Kh. Akhunova, Yu. A. Baimova
{"title":"Effect of the Dislocation Dipoles with Different Arms on the Graphene Deformation Behavior: Molecular Dynamics","authors":"A. Kh. Akhunova, Yu. A. Baimova","doi":"10.1134/S1063784224070028","DOIUrl":"10.1134/S1063784224070028","url":null,"abstract":"<div><p>The molecular dynamics simulation is used to analyze the features of the deformation behavior and the process of fracture of graphene with dislocation dipoles with different arm. Moreover, the wrinkling of graphene during deformation is taken into account, which greatly reduces the strength of graphene. It has been established that an increase in temperature slightly affects the mechanical properties of graphene with dislocation dipoles, in contrast to defect-free graphene and graphene with a Stone–Wales defect. It is shown that a change in the distance between dislocations in a dipole does not significantly affect the elastic modulus and graphene strength. However, the presence of dislocation dipoles can affect graphene wrinkling during stretching.</p></div>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"1878 - 1885"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Technical PhysicsPub Date : 2024-09-27DOI: 10.1134/S1063784224070302
V. S. Mikhailov, P. Yu. Babenko, A. P. Shergin, A. N. Zinoviev
{"title":"Particle Reflection Coefficients during Beryllium and Tungsten Bombardment by Various Atoms","authors":"V. S. Mikhailov, P. Yu. Babenko, A. P. Shergin, A. N. Zinoviev","doi":"10.1134/S1063784224070302","DOIUrl":"10.1134/S1063784224070302","url":null,"abstract":"<p>Using computer simulation, the particle reflection coefficients for Be and W targets were calculated in the 10 eV–100 keV energy range of incident atoms. H, D, T, He, Be, C, N, O, Ne, Ar, W were chosen as bombarding particles. The influence on reflection coefficients of the electronic stopping model, the surface potential barrier and the structure of the target (crystal, amorphous body) is shown.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"2053 - 2058"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Technical PhysicsPub Date : 2024-09-27DOI: 10.1134/S106378422407017X
M. V. Il’ina, N. N. Rudyk, O. I. Soboleva, M. R. Polyvianova, S. A. Khubezhov, O. I. Il’in
{"title":"Study of the Effect of Growth Temperature on the Properties of Nitrogen-Doped Carbon Nanotubes for Designing Nanopiezotronic Devices","authors":"M. V. Il’ina, N. N. Rudyk, O. I. Soboleva, M. R. Polyvianova, S. A. Khubezhov, O. I. Il’in","doi":"10.1134/S106378422407017X","DOIUrl":"10.1134/S106378422407017X","url":null,"abstract":"<p>The regularities of the influence of the growth temperature on the geometrical parameters, the concentration of the dopant nitrogen and the type of defects formed in carbon nanotubes grown on a molybdenum sublayer are established in this paper. It is shown that the best piezoelectric and resistive properties are observed in nitrogen-doped carbon nanotubes (N-CNTs) grown at a temperature of 525°C, which is due to the highest concentration of dopant nitrogen and high aspect ratio of nanotubes. Based on the results of thermodynamic analysis, the dependence of the dopant nitrogen concentration and the defect type on the tendency to form molybdenum nitrides and carbides during the growth of N-CNTs is shown. The obtained results can be used in the development of nanopiezotronic devices based on arrays of vertically aligned N-CNTs: nanogenerators, strain sensors and memory elements.</p>","PeriodicalId":783,"journal":{"name":"Technical Physics","volume":"69 7","pages":"1979 - 1985"},"PeriodicalIF":1.1,"publicationDate":"2024-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142414662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}