Surface Engineering and Applied Electrochemistry最新文献_第10页

Voltammetric Sensor for Simultaneous Determination of 4-Aminophenol, Acetaminophen and Mefenamic Acid Based on CoFe2O4/MCM-41 Nanocomposite Modified Electrode 基于CoFe2O4/MCM-41纳米复合修饰电极的伏安传感器同时测定4-氨基酚、对乙酰氨基酚和甲苯胺酸

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Surface Engineering and Applied Electrochemistry Pub Date : 2025-03-04 DOI: 10.3103/S1068375524700479

Ebrahim Zarei, Mahdi Hadadi, Alireza Asghari, Zohreh Bahrami

{"title":"Voltammetric Sensor for Simultaneous Determination of 4-Aminophenol, Acetaminophen and Mefenamic Acid Based on CoFe2O4/MCM-41 Nanocomposite Modified Electrode","authors":"Ebrahim Zarei, Mahdi Hadadi, Alireza Asghari, Zohreh Bahrami","doi":"10.3103/S1068375524700479","DOIUrl":"10.3103/S1068375524700479","url":null,"abstract":"In this study, for the first time, an electrochemical sensor has been developed by synthesizing CoFe2O4/MCM-41 nanocomposite and incorporating it into a carbon paste matrix. The simultaneous measurement of 4-aminophenol (4-AP), acetaminophen (APAP), and mefenamic acid (MA) was performed using this sensor. Scanning electron microscopy, elemental analysis, and X-ray diffraction were used to analyze the properties of the produced nanocomposite. By using the techniques of chronoamprometry, cyclic voltammetry, impedance spectroscopy, and differential pulse voltammetry, the electrochemical behavior of the modified electrode in aqueous solutions was investigated. When compared to а bare carbon paste electrode (CPE), the peak current response of the 4-AP, APAP, and MA was significantly improved at the CoFe2O4/MCM-41 nanocomposite modified СРЕ (CoFe2O4/MCM-41/CPE). Also, using differential pulse voltammetry (DPV) method, the linear range of 4–240, 3–200 and 2–180 μM and the limit of detection (LOD) (S/N = 3.0) 1.20, 1.05 and 0.52 μM were obtained for 4-AP, APAP, and MA, respectively. The ability of CoFe2O4/MCM-41/CPE to detect 4-AP, APAP, and MA in waste water, tablets, urine, and tap water has been confirmed by real sample analyses results.","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"60 6","pages":"857 - 873"},"PeriodicalIF":0.9,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143533123","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Electrical Properties of FeGa0.4In1.6Se4 at Alternating Current FeGa0.4In1.6Se4的交流电特性

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Surface Engineering and Applied Electrochemistry Pub Date : 2025-03-04 DOI: 10.3103/S1068375524700418

N. N. Niftiyev, A. O. Dashdemirov, F. M. Mammadov, R. M. Agayeva

{"title":"Electrical Properties of FeGa0.4In1.6Se4 at Alternating Current","authors":"N. N. Niftiyev, A. O. Dashdemirov, F. M. Mammadov, R. M. Agayeva","doi":"10.3103/S1068375524700418","DOIUrl":"10.3103/S1068375524700418","url":null,"abstract":"The temperature and frequency dependences of the dielectric constant and electrical conductivity of FeGa0.4In1.6Se4 crystals on alternating current have been studied. In the FeGa0.4In1.6Se4 crystal, normal dispersion occurs in the frequency range 2 × 102–104 Hz, and the lifetime distribution of defects obeys the law n(τ) ~ τ−1.75. With increasing temperature, the reason for an increase in the value of the real part of the dielectric constant is an increase in the concentration of defects. The experimentally observed monotonic decrease in the imaginary part of the dielectric constant depending on frequency indicates the presence of relaxation dispersion in the FeGa0.4In1.6Se4 crystal. It has been established that, in the temperature range 294.5–343 K at frequencies 2 × 102–106 Hz, the law σ ~ f S (0.1 ≤ S ≤ 1.0) is satisfied for electrical conductivity. It was shown that the conductivity in those crystals is characterized by a band-hopping mechanism. Activation energies were determined from the (log sigma sim frac{{{{{10}}^{3}}}}{T}) dependencies.","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"60 6","pages":"821 - 825"},"PeriodicalIF":0.9,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143533202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Formation of Binary Compounds of Impurity Atoms of Sulfur and Zinc in Silicon 硅中硫、锌杂质原子二元化合物的形成

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Surface Engineering and Applied Electrochemistry Pub Date : 2025-03-04 DOI: 10.3103/S106837552470042X

M. K. Khakkulov, A. Sh. Mavlyanov, O. E. Sattarov, N. A. Akbarova, Kh. K. Kamalova

{"title":"Formation of Binary Compounds of Impurity Atoms of Sulfur and Zinc in Silicon","authors":"M. K. Khakkulov, A. Sh. Mavlyanov, O. E. Sattarov, N. A. Akbarova, Kh. K. Kamalova","doi":"10.3103/S106837552470042X","DOIUrl":"10.3103/S106837552470042X","url":null,"abstract":"The paper presents the information on thermodynamic conditions and describes process stages required in order to form binary zinc-and-sulfur (ZnS) elementary cells in single-crystalline silicon while doping it with impurity atoms of group II and VI elements, i.e., zinc and sulfur, respectively. The thermodynamic conditions that ensure shaping of such elementary cells in silicon have been established. It has also been revealed that, before the formation of binary compound (consisting of zinc and sulfur atoms) nanoclusters, those chemical elements may have been present in the silicon matrix in the form of separately located atoms or various natural compounds. It is supposed that it might be possible to engineer previously unknown silicon-based materials with unique fundamental properties by applying the technique of assembling elementary cells and binary compounds of the ZnS type with preset concentrations. Using a scanning tunneling microscope, it was possible to determine the elemental composition of binary compounds that were formed in the matrix and on the surface of a silicon sample. An analysis of the results of the above experiments showed that binary compounds of the ZnS type are possibly formed in the Si crystalline sample characterized by new electrophysical parameters.","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"60 6","pages":"826 - 830"},"PeriodicalIF":0.9,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143533120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Influence of Impurity Complexes on the Electrophysical Properties of Germanium 杂质配合物对锗电物理性质的影响

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Surface Engineering and Applied Electrochemistry Pub Date : 2025-03-04 DOI: 10.3103/S1068375524700455

G. P. Gaidar

{"title":"Influence of Impurity Complexes on the Electrophysical Properties of Germanium","authors":"G. P. Gaidar","doi":"10.3103/S1068375524700455","DOIUrl":"10.3103/S1068375524700455","url":null,"abstract":"Abstract—Samples of n-type germanium (doped with three different impurities) with and without an oxygen impurity have been studied. To reveal the interaction of oxygen in n-Ge crystals with As, Sb, and Bi impurities, the effect of transverse magnetoresistance (very sensitive to the presence of complexes in the crystal) was chosen as a research method. It was shown that, in the germanium samples doped with antimony and bismuth, low-temperature annealing leads to the formation of electrically active impurity complexes that affect both the magnitude and the form of the dependence of the transverse magnetoresistance Δρ⊥/ρ0 on the magnetic field strength H. The insensitivity of the oxygen-enriched germanium crystals with an arsenic impurity (in contrast to the accompanying impurities of antimony and bismuth) to low-temperature thermal annealing has been revealed. This fact is of not only scientific but also practical interest since such annealing is in many cases one of the inalienable technological operations in the creation of a wide class of semiconductor devices, and the absence of oxygen in germanium (used for those purposes) is not always guaranteed by the supplying companies. It was shown that the use of impurity with a large tetrahedral radius in n-Ge crystals (at a practically equal concentration of charge carriers) is accompanied not only by a decrease in the tensoresistance ρX/ρ0 in the saturation region but also by a decrease in the rate of an increase in ρX/ρ0 with increasing pressure. The latter circumstance finds its manifestation in a decrease in the slope of the curves ρX/ρ0 = f (X).","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"60 6","pages":"844 - 850"},"PeriodicalIF":0.9,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143533122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Light Impact Deformation to Create a Near-Surface Nano- and Microstructured Layer in AISI 316L Stainless Steel 轻冲击变形在aisi316l不锈钢中形成近表面纳米和微结构层

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Surface Engineering and Applied Electrochemistry Pub Date : 2025-03-04 DOI: 10.3103/S1068375524700327

D. Z. Grabko, A. A. Prisacaru, D. E. Topal, O. A. Shikimaka

{"title":"Light Impact Deformation to Create a Near-Surface Nano- and Microstructured Layer in AISI 316L Stainless Steel","authors":"D. Z. Grabko, A. A. Prisacaru, D. E. Topal, O. A. Shikimaka","doi":"10.3103/S1068375524700327","DOIUrl":"10.3103/S1068375524700327","url":null,"abstract":"A nano- and microstructured surface layer (NMSSL) was created on an AISI 316L stainless-steel sample by impact loading. As a result of the impacts, a change in the microstructure of the test sample was observed: a decrease in the size of the grains, an increase in their misorientation, the appearance of slip bands inside the grains, and the appearance of rounded shapes of different sizes (0.1–15 μm) and with different densities on the surface of the sample. Moreover, these nanomicrocrystalline grains had random crystallographic orientation. The microhardness of the deformed surface was assessed using the Vickers and Berkovich methods. The hardness imprints had an approximately equiaxial shape, but the sides of the imprints were often distorted. The microhardness on the impact-deformed surface ranged as Н = 2.7–4.2 GPa depending on the number of impacts, increasing with their growth and decreasing with the distance from the impact surface. The microhardness of the undeformed sample was 2.0 GPa. The main patterns of formation of the deformed layer depending on the number of impacts have been revealed.","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"60 6","pages":"742 - 751"},"PeriodicalIF":0.9,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143533275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photocatalytic Activity of a Coating Synthesized in Electrolytic Plasma on the Surface of Ultralight Magnesium Alloy 超轻镁合金表面电解等离子体合成涂层的光催化活性

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Surface Engineering and Applied Electrochemistry Pub Date : 2025-03-04 DOI: 10.3103/S1068375524700431

B. L. Krit, N. V. Morozova, S. Ya. Betsofen, Wu Ruizhi, V. M. Medvetskova, Ya. V. Dolgushin, T. Yu. Mogilnaya

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Experimental Method and Software Instruments for Sliding Tribosystem Dynamic Behavior Research 滑动摩擦系统动态行为研究的实验方法和软件工具

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Surface Engineering and Applied Electrochemistry Pub Date : 2024-10-28 DOI: 10.3103/S1068375524700297

A. G. Postaru

{"title":"Experimental Method and Software Instruments for Sliding Tribosystem Dynamic Behavior Research","authors":"A. G. Postaru","doi":"10.3103/S1068375524700297","DOIUrl":"10.3103/S1068375524700297","url":null,"abstract":"In this work, a harmonic oscillator with elastic elements is adopted as a model of a mechanical system sensitive to various force disturbances. The developed physical and mathematical models for the interaction of the oscillator with the tribosystem model formed the basis for the creation of a method and a set of experimental tools for assessing the tribological state of the contact and the behavior of the sliding tribosystem under dynamic operating conditions. For this purpose, an original installation was designed and built with a specially prepared test chamber using a harmonic oscillator as a sensitive unit. The installation was equipped with a specially developed measuring system for monitoring the state of the tribomodel and the oscillator, implemented using experimental data collection tools (products of National Instruments). According to the methodology, specialized software has been developed using LabVIEW, which allows the collection, processing, and storage of experimental data in large volumes and with high productivity. The experimental tools together with the developed software expand the range of test conditions for sliding tribosystems and make it possible to evaluate their behavior in various dynamic operating modes, including frictional self-oscillations.","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"60 5","pages":"706 - 716"},"PeriodicalIF":0.9,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electroerosion Series of Metals for Electric Spark Deposition Based on Solution of the Heat-Conduction Problem 基于热传导问题解决方案的电火花沉积金属电蚀系列

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Surface Engineering and Applied Electrochemistry Pub Date : 2024-10-28 DOI: 10.3103/S1068375524700169

A. A. Burkov, V. K. Khe, A. Yu. Bytsura

引用次数: 0

Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon 磁场、电场和光强对硅中重组波参数的影响

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Surface Engineering and Applied Electrochemistry Pub Date : 2024-10-28 DOI: 10.3103/S1068375524700248

N. F. Zikrillaev, M. M. Shoabdurakhimova, U. Kh. Kurbanova, N. Narkulov, F. K. Shakarov

{"title":"Effect of the Magnetic Field, Electric Field, and Light Intensity on the Parameters of Recombination Waves in Silicon","authors":"N. F. Zikrillaev, M. M. Shoabdurakhimova, U. Kh. Kurbanova, N. Narkulov, F. K. Shakarov","doi":"10.3103/S1068375524700248","DOIUrl":"10.3103/S1068375524700248","url":null,"abstract":"The paper presents experimental study results of self-oscillations of the current of the recombination wave (RW) type in silicon doped with impurity selenium atoms. Doping of silicon with impurity selenium atoms was carried out using a newly developed technology, which allows for the formation of nanoclusters of impurity selenium atoms in the silicon lattice consisting of Se2 and Se4 molecules, without erosion of the surface of the samples. Self-oscillations in the ({text{Si}}leftlangle {{text{Se}}} rightrangle ) samples were detected at room temperature and at sufficiently low electric fields. The dependences of the RW parameters (amplitude and frequency) in the Si(leftlangle {{text{Se}}} rightrangle ) samples on the resistivity and concentration of the formed nanoclusters of selenium atoms, as well as on the influence of a magnetic field, which makes it possible to control the amplitude in the range of J = 10–5–5 × 10–3 A and the frequency of self-oscillations of f = 104–(5 × 106) Hz. The mechanism of the observed RWs is explained by the formation of nanoclusters consisting of two (Se2) or four (Se4) selenium atoms in silicon, which leads to the formation of fluctuations (clusters) of the main charge carriers and their reaching contact when determining the magnitude of the applied constant electric field. A possibility of practical use of self-oscillations of current observed in silicon diffusion doped with selenium impurity atoms to create solid-state generators is shown.","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"60 5","pages":"691 - 697"},"PeriodicalIF":0.9,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigating the Effect of Explosive Welding Variables on the Corrosion Behavior of Copper–Aluminum–Copper in the Salt Environment 探究爆炸焊接变量对铜铝铜在盐环境中腐蚀行为的影响

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Surface Engineering and Applied Electrochemistry Pub Date : 2024-10-28 DOI: 10.3103/S1068375524700273

J. Nazeri, M. R. Khanzadeh, H. Bakhtiari, Z. S. Seyedraoufi

{"title":"Investigating the Effect of Explosive Welding Variables on the Corrosion Behavior of Copper–Aluminum–Copper in the Salt Environment","authors":"J. Nazeri, M. R. Khanzadeh, H. Bakhtiari, Z. S. Seyedraoufi","doi":"10.3103/S1068375524700273","DOIUrl":"10.3103/S1068375524700273","url":null,"abstract":"In this study, the corrosion behavior and microstructural transformations of 1000 series aluminum and copper tubes after an explosive welding process were investigated. Welding was performed with a fixed stand-off distance and various explosion thicknesses. Explosive welding was carried out using a consistent stand-off distance of 2 mm while varying the thickness of the explosive material of 60 mm (sample 1) and 80 mm (sample 2). The explosion velocity employed during the process was measured at 2504 m/s. Optical and electron microscopy images revealed that the thickness of the melting layer at the interface increases proportionally with the thickness of the explosive charge. Specifically, as the explosive thickness increased from 60 to 80 mm, the thickness of the melting layer increased as well. Also, the resuls of the potentiodynamic polarization test indicated a decrease in the corrosion potential from –670 mV (sample 1) to –665 mV (sample 2) as the explosive material thicknesses increased. At the same time, the corrosion current density rose from 52.34 µA/cm2 (sample 1) to 78.32 μA/cm2 (sample 2). An analysis of the Nyquist diagram for explosive welding samples revealed that the curve radius of sample 2 exceeded that of sample 1, suggesting a higher corrosion resistance in sample 1 compared to that in sample 2.","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"60 5","pages":"698 - 705"},"PeriodicalIF":0.9,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142524452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0