{"title":"Influence of Impurity Complexes on the Electrophysical Properties of Germanium","authors":"G. P. Gaidar","doi":"10.3103/S1068375524700455","DOIUrl":null,"url":null,"abstract":"<p><b>Abstract</b>—Samples of <i>n</i>-type germanium (doped with three different impurities) with and without an oxygen impurity have been studied. To reveal the interaction of oxygen in <i>n</i>-Ge crystals with As, Sb, and Bi impurities, the effect of transverse magnetoresistance (very sensitive to the presence of complexes in the crystal) was chosen as a research method. It was shown that, in the germanium samples doped with antimony and bismuth, low-temperature annealing leads to the formation of electrically active impurity complexes that affect both the magnitude and the form of the dependence of the transverse magnetoresistance Δρ<sub>⊥</sub>/ρ<sub>0</sub> on the magnetic field strength <i>H</i>. The insensitivity of the oxygen-enriched germanium crystals with an arsenic impurity (in contrast to the accompanying impurities of antimony and bismuth) to low-temperature thermal annealing has been revealed. This fact is of not only scientific but also practical interest since such annealing is in many cases one of the inalienable technological operations in the creation of a wide class of semiconductor devices, and the absence of oxygen in germanium (used for those purposes) is not always guaranteed by the supplying companies. It was shown that the use of impurity with a large tetrahedral radius in <i>n</i>-Ge crystals (at a practically equal concentration of charge carriers) is accompanied not only by a decrease in the tensoresistance ρ<sub><i>X</i></sub>/ρ<sub>0</sub> in the saturation region but also by a decrease in the rate of an increase in ρ<sub><i>X</i></sub>/ρ<sub>0</sub> with increasing pressure. The latter circumstance finds its manifestation in a decrease in the slope of the curves ρ<sub><i>X</i></sub>/ρ<sub>0</sub> = <i>f</i> (<i>X</i>).</p>","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"60 6","pages":"844 - 850"},"PeriodicalIF":0.9000,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Engineering and Applied Electrochemistry","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.3103/S1068375524700455","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract—Samples of n-type germanium (doped with three different impurities) with and without an oxygen impurity have been studied. To reveal the interaction of oxygen in n-Ge crystals with As, Sb, and Bi impurities, the effect of transverse magnetoresistance (very sensitive to the presence of complexes in the crystal) was chosen as a research method. It was shown that, in the germanium samples doped with antimony and bismuth, low-temperature annealing leads to the formation of electrically active impurity complexes that affect both the magnitude and the form of the dependence of the transverse magnetoresistance Δρ⊥/ρ0 on the magnetic field strength H. The insensitivity of the oxygen-enriched germanium crystals with an arsenic impurity (in contrast to the accompanying impurities of antimony and bismuth) to low-temperature thermal annealing has been revealed. This fact is of not only scientific but also practical interest since such annealing is in many cases one of the inalienable technological operations in the creation of a wide class of semiconductor devices, and the absence of oxygen in germanium (used for those purposes) is not always guaranteed by the supplying companies. It was shown that the use of impurity with a large tetrahedral radius in n-Ge crystals (at a practically equal concentration of charge carriers) is accompanied not only by a decrease in the tensoresistance ρX/ρ0 in the saturation region but also by a decrease in the rate of an increase in ρX/ρ0 with increasing pressure. The latter circumstance finds its manifestation in a decrease in the slope of the curves ρX/ρ0 = f (X).
摘要：研究了含氧和不含氧杂质的n型锗（掺杂三种不同杂质）样品。为了揭示氮锗晶体中氧与As、Sb和Bi杂质的相互作用，我们选择横向磁阻效应（对晶体中配合物的存在非常敏感）作为研究方法。结果表明，在掺有锑和铋的锗样品中，低温退火导致形成电活性杂质配合物，影响横向磁电阻Δρ⊥/ρ0对磁场强度h的依赖性的大小和形式。含有砷杂质（与伴随的锑和铋杂质相反）的富氧锗晶体对低温热退火的不敏感性已经被揭示出来。这一事实不仅具有科学意义，而且具有实际意义，因为这种退火在许多情况下是制造各种半导体器件的不可分割的技术操作之一，而供应公司并不总是保证锗（用于这些目的）中不含氧。结果表明，在n-Ge晶体中（在载流子浓度几乎相等的情况下），使用具有大四面体半径的杂质，不仅会降低饱和区ρX/ρ0的张阻，而且会降低ρX/ρ0随压力的增加而增加的速率。后一种情况表现为曲线ρX/ρ0 = f (X)的斜率减小。
期刊介绍：
Surface Engineering and Applied Electrochemistry is a journal that publishes original and review articles on theory and applications of electroerosion and electrochemical methods for the treatment of materials; physical and chemical methods for the preparation of macro-, micro-, and nanomaterials and their properties; electrical processes in engineering, chemistry, and methods for the processing of biological products and food; and application electromagnetic fields in biological systems.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
