N. N. Niftiyev, A. O. Dashdemirov, F. M. Mammadov, R. M. Agayeva
{"title":"Electrical Properties of FeGa0.4In1.6Se4 at Alternating Current","authors":"N. N. Niftiyev, A. O. Dashdemirov, F. M. Mammadov, R. M. Agayeva","doi":"10.3103/S1068375524700418","DOIUrl":null,"url":null,"abstract":"<p>The temperature and frequency dependences of the dielectric constant and electrical conductivity of FeGa<sub>0.4</sub>In<sub>1.6</sub>Se<sub>4</sub> crystals on alternating current have been studied. In the FeGa<sub>0.4</sub>In<sub>1.6</sub>Se<sub>4</sub> crystal, normal dispersion occurs in the frequency range 2 × 10<sup>2</sup>–10<sup>4</sup> Hz, and the lifetime distribution of defects obeys the law <i>n</i>(τ) ~ τ−<sup>1.75</sup>. With increasing temperature, the reason for an increase in the value of the real part of the dielectric constant is an increase in the concentration of defects. The experimentally observed monotonic decrease in the imaginary part of the dielectric constant depending on frequency indicates the presence of relaxation dispersion in the FeGa<sub>0.4</sub>In<sub>1.6</sub>Se<sub>4</sub> crystal. It has been established that, in the temperature range 294.5–343 K at frequencies 2 × 10<sup>2</sup>–10<sup>6</sup> Hz, the law σ ~ <i>f</i> <sup><i>S</i></sup> (0.1 ≤ <i>S</i> ≤ 1.0) is satisfied for electrical conductivity. It was shown that the conductivity in those crystals is characterized by a band-hopping mechanism. Activation energies were determined from the <span>\\(\\log \\sigma \\sim \\frac{{{{{10}}^{3}}}}{T}\\)</span> dependencies.</p>","PeriodicalId":782,"journal":{"name":"Surface Engineering and Applied Electrochemistry","volume":"60 6","pages":"821 - 825"},"PeriodicalIF":0.9000,"publicationDate":"2025-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Surface Engineering and Applied Electrochemistry","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.3103/S1068375524700418","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
The temperature and frequency dependences of the dielectric constant and electrical conductivity of FeGa0.4In1.6Se4 crystals on alternating current have been studied. In the FeGa0.4In1.6Se4 crystal, normal dispersion occurs in the frequency range 2 × 102–104 Hz, and the lifetime distribution of defects obeys the law n(τ) ~ τ−1.75. With increasing temperature, the reason for an increase in the value of the real part of the dielectric constant is an increase in the concentration of defects. The experimentally observed monotonic decrease in the imaginary part of the dielectric constant depending on frequency indicates the presence of relaxation dispersion in the FeGa0.4In1.6Se4 crystal. It has been established that, in the temperature range 294.5–343 K at frequencies 2 × 102–106 Hz, the law σ ~ fS (0.1 ≤ S ≤ 1.0) is satisfied for electrical conductivity. It was shown that the conductivity in those crystals is characterized by a band-hopping mechanism. Activation energies were determined from the \(\log \sigma \sim \frac{{{{{10}}^{3}}}}{T}\) dependencies.
期刊介绍:
Surface Engineering and Applied Electrochemistry is a journal that publishes original and review articles on theory and applications of electroerosion and electrochemical methods for the treatment of materials; physical and chemical methods for the preparation of macro-, micro-, and nanomaterials and their properties; electrical processes in engineering, chemistry, and methods for the processing of biological products and food; and application electromagnetic fields in biological systems.