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Bilayer-Nanomesh Transparent Neuroelectrodes on 10μm-Thick PDMS. 10 微米厚 PDMS 上的双层纳米透明神经电极。
Technical digest. International Electron Devices Meeting Pub Date : 2022-12-01 DOI: 10.1109/iedm45625.2022.10019516
Jaehyeon Ryu, Yi Qiang, Dongyeol Jang, Junyeub Suh, Hui Fang
{"title":"Bilayer-Nanomesh Transparent Neuroelectrodes on 10μm-Thick PDMS.","authors":"Jaehyeon Ryu, Yi Qiang, Dongyeol Jang, Junyeub Suh, Hui Fang","doi":"10.1109/iedm45625.2022.10019516","DOIUrl":"10.1109/iedm45625.2022.10019516","url":null,"abstract":"<p><p>Transparent electrode arrays have emerged as promising platforms for neural interfacing by enabling simultaneous electrophysiological recording and optical measurements. Soft and thin devices also have compelling advantages due to their less mechanical mismatch with the brain tissue. Here we demonstrate a bilayer-nanomesh-based transparent microelectrode array (MEA) on ultrathin Polydimethylsiloxane (PDMS) substrate. We have successfully fabricated 32-channel, bilayer-nanomesh microelectrodes on PDMS with total device thickness down to only 10μm. In addition to excellent electrode performance, device reliability, and optical transparency, we have also demonstrated successful hydrophilic surface modification and great sterilization compatibility.</p>","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"2022 ","pages":"29.3.1-29.3.4"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9929514/pdf/nihms-1872549.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"10735454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and Characterization of 3D Multi-Electrode Array on Flexible Substrate for In Vivo EMG Recording from Expiratory Muscle of Songbird. 柔性基底上三维多电极阵列的制备和表征，用于鸣禽呼气肌的体内肌电记录。
Technical digest. International Electron Devices Meeting Pub Date : 2018-12-01 Epub Date: 2019-01-17 DOI: 10.1109/IEDM.2018.8614503
Muneeb Zia, Bryce Chung, Samuel J Sober, Muhannad S Bakir
{"title":"Fabrication and Characterization of 3D Multi-Electrode Array on Flexible Substrate for <i>In Vivo</i> EMG Recording from Expiratory Muscle of Songbird.","authors":"Muneeb Zia,&nbsp;Bryce Chung,&nbsp;Samuel J Sober,&nbsp;Muhannad S Bakir","doi":"10.1109/IEDM.2018.8614503","DOIUrl":"10.1109/IEDM.2018.8614503","url":null,"abstract":"<p><p>This work presents fabrication and characterization of flexible three-dimensional (3D) multi-electrode arrays (MEAs) capable of high signal-to-noise (SNR) electromyogram (EMG) recordings from the expiratory muscle of a songbird. The fabrication utilizes a photoresist reflow process to obtain 3D structures to serve as the electrodes. A polyimide base with a PDMS top insulation was utilized to ensure flexibility and biocompatibility of the fabricated 3D MEA devices. SNR measurements from the fabricated 3D electrode show up to a 7x improvement as compared to the 2D MEAs.</p>","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"2018 ","pages":"29.4.1-29.4.4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/IEDM.2018.8614503","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"37210276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Highly integrated CMOS microsystems to interface with neurons at subcellular resolution. 高度集成的CMOS微系统与亚细胞分辨率的神经元接口。
Technical digest. International Electron Devices Meeting Pub Date : 2015-01-01 Epub Date: 2016-02-18 DOI: 10.1109/IEDM.2015.7409688
Andreas Hierlemann, Jan Müller, Douglas Bakkum, Felix Franke
{"title":"Highly integrated CMOS microsystems to interface with neurons at subcellular resolution.","authors":"Andreas Hierlemann,&nbsp;Jan Müller,&nbsp;Douglas Bakkum,&nbsp;Felix Franke","doi":"10.1109/IEDM.2015.7409688","DOIUrl":"https://doi.org/10.1109/IEDM.2015.7409688","url":null,"abstract":"<p><p>CMOS high-density transducer arrays enable fundamentally new neuroscientific insights through, e.g., facilitating investigation of axonal signaling characteristics, with the \"axonal\" side of neuronal activity being largely inaccessible to established methods. They also enable high-throughput monitoring of potentially all action potentials in a larger neuronal network (> 1000 neurons) over extended time to see developmental effects or effects of disturbances. Applications include research in neural diseases and pharmacology.</p>","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"2015 ","pages":"13.2.1-13.2.4"},"PeriodicalIF":0.0,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1109/IEDM.2015.7409688","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"38839796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Amorphous silicon pixel amplifier with /spl Delta/V/sub T/ compensation for low noise digital fluoroscopy 具有/spl Delta/V/sub / T补偿的非晶硅像素放大器，用于低噪声数字透视
Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI: 10.1109/IEDM.2002.1175816
K. Karim, A. Nathan, J. Rowlands
{"title":"Amorphous silicon pixel amplifier with /spl Delta/V/sub T/ compensation for low noise digital fluoroscopy","authors":"K. Karim, A. Nathan, J. Rowlands","doi":"10.1109/IEDM.2002.1175816","DOIUrl":"https://doi.org/10.1109/IEDM.2002.1175816","url":null,"abstract":"The reported amorphous silicon (a-Si) pixel amplifier offers an improved signal-to-noise ratio compared to its traditional a-Si switch counterpart. Results from this research demonstrate that a-Si on-pixel amplifiers, coupled with a well established X-ray detection technology such as amorphous selenium, meet the minimum requirements for large area, real-time, low noise digital fluoroscopy.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"20 1","pages":"215-218"},"PeriodicalIF":0.0,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73894001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors 用弹道晶体管的一般理论评估硅MOS和碳纳米管场效应管的性能极限
Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI: 10.1109/IEDM.2002.1175937
Jing Guo, S. Datta, M. Lundstrom, M. Brink, P. McEuen, A. Javey, H. Dai, Hyoungsub Kim, P. McIntyre
{"title":"Assessment of silicon MOS and carbon nanotube FET performance limits using a general theory of ballistic transistors","authors":"Jing Guo, S. Datta, M. Lundstrom, M. Brink, P. McEuen, A. Javey, H. Dai, Hyoungsub Kim, P. McIntyre","doi":"10.1109/IEDM.2002.1175937","DOIUrl":"https://doi.org/10.1109/IEDM.2002.1175937","url":null,"abstract":"A simple model for ballistic nanotransistors, which extends previous work by treating both the charge control and the quantum capacitance limits of MOSFET-like transistors, is presented. We apply this new model to MOSFET-like carbon nanotube FETs (CNTFETs) and to MOSFETs at the scaling limit. The device physics for operation at ballistic and quantum capacitance limits are explored. Based on the analysis of recently reported CNTFETs, we compare CNTFETs to MOSFETs. The potential performance advantages over Si that might be achieved at the scaling limit are established by using the new model.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"49 1","pages":"711-714"},"PeriodicalIF":0.0,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75322081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 120
Advanced metal barrier free Cu damascene interconnects with PECVD silicon carbide barriers for 90/65-nm BEOL technology 先进的无金属屏障Cu damascene互连与PECVD碳化硅屏障，用于90/65纳米BEOL技术
Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI: 10.1109/IEDM.2002.1175911
Z. Wu, Y.C. Lu, C. Chiang, M. Chen, B.T. Chen, G. Wang, Y. Chen, J.L. Huang, S. Jang, M. Liang
{"title":"Advanced metal barrier free Cu damascene interconnects with PECVD silicon carbide barriers for 90/65-nm BEOL technology","authors":"Z. Wu, Y.C. Lu, C. Chiang, M. Chen, B.T. Chen, G. Wang, Y. Chen, J.L. Huang, S. Jang, M. Liang","doi":"10.1109/IEDM.2002.1175911","DOIUrl":"https://doi.org/10.1109/IEDM.2002.1175911","url":null,"abstract":"Advanced metal barrier free (MBF) Cu dual damascene interconnects (DDIs) have been successfully fabricated using a low-k CVD OSG (k=2.5) and PECVD silicon carbides for the first time. With PECVD silicon carbides replacing TaN, the Cu DDIs thus built showed 8% better in interconnect RC delay, 36% lower in via resistance and three orders of magnitude lower in line-line leakage at 200/spl deg/C. The newly developed technology also enhanced Cu TDDB lifetime by more than three orders of magnitude. On the MBF DDIs, 15%-faster 90-nm CMOS device operation has been achieved, which makes the newly developed MBF Cu DDI technology promising for high performance sub-90 nm CMOS devices and beyond.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"128 1","pages":"595-598"},"PeriodicalIF":0.0,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80463067","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Additional scattering effects for mobility degradation in Hf-silicate gate MISFETs hf -硅酸盐栅极misfet中迁移率退化的附加散射效应
Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI: 10.1109/IEDM.2002.1175916
T. Yamaguchi, R. Iijima, T. Ino, A. Nishiyama, H. Satake, N. Fukushima
{"title":"Additional scattering effects for mobility degradation in Hf-silicate gate MISFETs","authors":"T. Yamaguchi, R. Iijima, T. Ino, A. Nishiyama, H. Satake, N. Fukushima","doi":"10.1109/IEDM.2002.1175916","DOIUrl":"https://doi.org/10.1109/IEDM.2002.1175916","url":null,"abstract":"By controlling the crystallization in Hf-silicate gate dielectrics, we directly observed that the crystallized-HfO/sub 2/ portions in Hf-silicate degrade the electron mobility in Hf-silicate gate MISFETs. The degradation is proportional to the amount of crystallized portions in the Hf-silicate, which induce Coulomb scattering, in addition to substrate impurity scattering. Furthermore, we quantitatively investigated the contributions of the additional scattering to the electron mobility in Hf-silicate gate MISFETs.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"5 1","pages":"621-624"},"PeriodicalIF":0.0,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81816996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
A 2 Gb NAND flash memory with 0.044 /spl mu/m/sup 2/ cell size using 90 nm flash technology 采用90nm闪存技术，容量为0.044 /spl mu/m/sup 2/ cell的2gb NAND闪存
Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI: 10.1109/IEDM.2002.1175986
Dong-chan Kim, W. Shin, Jaeduk Lee, Jinhyun Shin, Joon-hee Lee, S. Hur, Ihngee Baik, Yoocheol Shin, Changhyun Lee, J. Yoon, Heon-Guk Lee, Kwon-Soon Jo, Seungwook Choi, Byung-Kwan You, Jeong-Hyuk Choi, Donggun Park, Kinam Kim
{"title":"A 2 Gb NAND flash memory with 0.044 /spl mu/m/sup 2/ cell size using 90 nm flash technology","authors":"Dong-chan Kim, W. Shin, Jaeduk Lee, Jinhyun Shin, Joon-hee Lee, S. Hur, Ihngee Baik, Yoocheol Shin, Changhyun Lee, J. Yoon, Heon-Guk Lee, Kwon-Soon Jo, Seungwook Choi, Byung-Kwan You, Jeong-Hyuk Choi, Donggun Park, Kinam Kim","doi":"10.1109/IEDM.2002.1175986","DOIUrl":"https://doi.org/10.1109/IEDM.2002.1175986","url":null,"abstract":"A manufacturable 2 Gb NAND flash memory with 0.044 /spl mu/m/sup 2/ cell size, which is the smallest cell size ever reported in semiconductor memory, is successfully developed with 90 nm NAND flash technology for high density file storage application. The three main key technology features of 90 nm NAND flash technology are advanced KrF lithography with off-axis illumination system equipped with a dipole aperture, reduced stack height of cell, and optimized gate reoxidation affecting tunnel oxide profile.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"160 1","pages":"919-922"},"PeriodicalIF":0.0,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85605683","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Advanced Si/sub 1-x/Gex source/drain and contact technologies for sub-70 nm CMOS 先进的Si/sub - 1-x/Gex源极/漏极和触点技术，用于sub-70 nm CMOS
Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI: 10.1109/IEDM.2002.1175856
M. Ozturk, Jing Liu, H. Mo, N. Pesovic
{"title":"Advanced Si/sub 1-x/Gex source/drain and contact technologies for sub-70 nm CMOS","authors":"M. Ozturk, Jing Liu, H. Mo, N. Pesovic","doi":"10.1109/IEDM.2002.1175856","DOIUrl":"https://doi.org/10.1109/IEDM.2002.1175856","url":null,"abstract":"Future CMOS technology nodes require super-abrupt source/drain junctions with very low contact resistivities. In this paper, we examine properties of ultra-shallow junctions formed by selective deposition of in-situ doped Si/sub 1-x/Ge/sub x/ alloys. Contacts to these junctions consist of self-aligned Ni and Pt germanosilicide contacts formed via solid phase reactions. We present super-abrupt junctions with SIMS abruptness figures under 2.2 nm/decade and contact resistivities near 10/sup -8/ ohm-cm/sup 2/. The results indicate that the technology can meet source/drain requirements of all technology nodes included in the 2001 edition of International Technology Roadmap for Semiconductors.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"309 1","pages":"375-378"},"PeriodicalIF":0.0,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78362318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Extreme scaling with ultra-thin Si channel MOSFETs 超薄硅沟道mosfet的极限缩放
Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI: 10.1109/IEDM.2002.1175829
Bruce B. Doris, M. Ieong, T. Kanarsky, Ying Zhang, R. Roy, O. Dokumaci, Z. Ren, F. Jamin, L. Shi, W. Natzle, Hsiang-Jen Huang, J. Mezzapelle, A. Mocuta, S. Womack, Michael A. Gribelyuk, E. C. Jones, R. J. Miller, Hon-Sum Philip Wong, Wilfried Haensch
{"title":"Extreme scaling with ultra-thin Si channel MOSFETs","authors":"Bruce B. Doris, M. Ieong, T. Kanarsky, Ying Zhang, R. Roy, O. Dokumaci, Z. Ren, F. Jamin, L. Shi, W. Natzle, Hsiang-Jen Huang, J. Mezzapelle, A. Mocuta, S. Womack, Michael A. Gribelyuk, E. C. Jones, R. J. Miller, Hon-Sum Philip Wong, Wilfried Haensch","doi":"10.1109/IEDM.2002.1175829","DOIUrl":"https://doi.org/10.1109/IEDM.2002.1175829","url":null,"abstract":"We examine the scaling limits for planar single gate technology using the ultra-thin Si channel MOSFET. Characteristics for extreme scaled devices with physical gate lengths down to 6 nm and SOI channels as thin as 4 nm are presented. For the first time, we report ring oscillators with 26 nm gate lengths and ultra-thin Si channels.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"1 1","pages":"267-270"},"PeriodicalIF":0.0,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79990457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 191
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