Advanced Photonics Research最新文献

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Temporal Characterization of Laser Pulses Using an Air-Based Knife-Edge Technique
IF 3.7
Advanced Photonics Research Pub Date : 2024-06-27 DOI: 10.1002/adpr.202400074
Pierre Béjot, Rishabh Kumar Bhalavi, Adrien Leblanc, Antoine Dubrouil, Franck Billard, Olivier Faucher, Edouard Hertz
{"title":"Temporal Characterization of Laser Pulses Using an Air-Based Knife-Edge Technique","authors":"Pierre Béjot,&nbsp;Rishabh Kumar Bhalavi,&nbsp;Adrien Leblanc,&nbsp;Antoine Dubrouil,&nbsp;Franck Billard,&nbsp;Olivier Faucher,&nbsp;Edouard Hertz","doi":"10.1002/adpr.202400074","DOIUrl":"https://doi.org/10.1002/adpr.202400074","url":null,"abstract":"<p>The characterization of ultrashort laser pulses is presented by using the plasma-induced frequency-resolved optical switching technique, implemented in ambient air. The recently developed method allows for a temporal reconstruction of a pulse at its focal spot by utilizing a moderately intense pump laser pulse for generating a ionization-induced ultrafast defocusing lens. When propagating through the produced plasma lens, the probe beam to characterize experiences an increase of its size in the far field. The spectrum of the defocused probe field, measured as a function of the pump-probe delay, allows for a comprehensive characterization of the temporal and spectral attributes of the pulse. Herein, the ability of this technique, initially designed for use in rare gases, is reported to operate in ambient air conditions with similar performance. The method is remarkably straightforward to implement and requires no additional optical component other than a focusing mirror while delivering laser pulse reconstructions of high reliability.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 1","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400074","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143119668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Terahertz Pseudo-Waveform-Selective Metasurface Absorber Based on a Square-Patch Structure Loaded with Linear Circuit Components 基于加载线性电路元件的方形贴片结构的太赫兹伪波形选择性元表面吸收器
IF 3.7
Advanced Photonics Research Pub Date : 2024-06-27 DOI: 10.1002/adpr.202300303
Yongzhi Cheng, Rui Xing, Fu Chen, Hui Luo, Ashif Aminulloh Fathnan, Hiroki Wakatsuchi
{"title":"Terahertz Pseudo-Waveform-Selective Metasurface Absorber Based on a Square-Patch Structure Loaded with Linear Circuit Components","authors":"Yongzhi Cheng,&nbsp;Rui Xing,&nbsp;Fu Chen,&nbsp;Hui Luo,&nbsp;Ashif Aminulloh Fathnan,&nbsp;Hiroki Wakatsuchi","doi":"10.1002/adpr.202300303","DOIUrl":"https://doi.org/10.1002/adpr.202300303","url":null,"abstract":"<p>\u0000In recent years, metasurfaces composed of lumped nonlinear circuits have been reported to exhibit the capability of detecting specific electromagnetic waves, even when the waves are of the same frequency, depending on their respective waveforms or, more precisely, their pulse widths. Herein, three types of metasurface absorbers (MSAs) are presented which are composed of a square-patch structure loaded with linear circuit components, including lumped resistors or resistors in parallel with capacitors/inductors, which can mimic the waveform-selective absorption behavior in the terahertz (THz) region. By judiciously selecting suitable values for the linear circuit components, these MSAs can achieve near-perfect absorption of incident continuous waves or longer pulses while exhibiting reduced absorption of short pulses at the same THz frequency. These linear circuit structures can be referred to as pseudo-waveform-selective MSAs because their waveform-selective absorption characteristics are primarily derived from the dispersion behavior of the resonator structures, as opposed to the frequency conversion commonly observed in nonlinear circuits. These outcomes and discoveries introduce an additional degree of freedom for waveform discrimination in the THz frequency range, potentially enabling a broader range of applications, including but not limited to detection, sensing, and wireless communication.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 8","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202300303","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141968216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Nonlinear Self-Accelerating Pulses Shedding from Airyprime Pulses in Kerr Media 非线性自加速脉冲从克尔介质中的空气质子脉冲中脱落
IF 3.7
Advanced Photonics Research Pub Date : 2024-06-27 DOI: 10.1002/adpr.202400056
Xuri Yang, Qi Huang, Yanxia Gao, Dianyuan Fan, Lifu Zhang
{"title":"Nonlinear Self-Accelerating Pulses Shedding from Airyprime Pulses in Kerr Media","authors":"Xuri Yang,&nbsp;Qi Huang,&nbsp;Yanxia Gao,&nbsp;Dianyuan Fan,&nbsp;Lifu Zhang","doi":"10.1002/adpr.202400056","DOIUrl":"https://doi.org/10.1002/adpr.202400056","url":null,"abstract":"<p>Herein, the propagation of truncated Airyprime pulses in nonlinear optical fibers with anomalous or normal dispersion is studied. Nonlinear self-accelerating pulses generation, which is in sharp contrast to that of Airy pulses, is observed. Accelerating pulses have notable redshifted spectral notch (double peaks) or single blueshifted spectral peak depending on whether the dispersion is anomalous or normal. The emergent nonlinear self-accelerating pulses are very sensitive to the truncated coefficient. The relationship between the characteristics of such accelerating pulses and the truncated coefficient is disclosed and compared in detail. The results not only shed new light on the nonlinear propagation of Airyprime pulses, but also provide a novel method to generate nonlinear self-accelerating pulses as well as enable the realization of very efficient wavelength conversion based on the controlled frequency shift. Based on space–time duality, self-accelerating spatiotemporal nonlinear light bullets can be envisaged from the propagation of spatiotemporal Airyprime wave packets in pure Kerr medium.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 12","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400056","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142862360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Lensless Imaging Based on Dual-Input Physics-Driven Neural Network 基于双输入物理驱动神经网络的无透镜成像技术
IF 3.7
Advanced Photonics Research Pub Date : 2024-06-19 DOI: 10.1002/adpr.202400029
Jiale Zuo, Ju Tang, Mengmeng Zhang, Jiawei Zhang, Zhenbo Ren, Jianglei Di, Jianlin Zhao
{"title":"Lensless Imaging Based on Dual-Input Physics-Driven Neural Network","authors":"Jiale Zuo,&nbsp;Ju Tang,&nbsp;Mengmeng Zhang,&nbsp;Jiawei Zhang,&nbsp;Zhenbo Ren,&nbsp;Jianglei Di,&nbsp;Jianlin Zhao","doi":"10.1002/adpr.202400029","DOIUrl":"https://doi.org/10.1002/adpr.202400029","url":null,"abstract":"<p>Lensless imaging, as a novel computational imaging technique, has attracted great attention due to its simplicity, compactness, and flexibility. This technique analyzes and processes the diffraction of an object to obtain complex amplitude information. However, traditional algorithms such as Gerchberg-Saxton (G–S) algorithm tend to exhibit significant errors in complex amplitude retrieval, particularly for edge information. Additional constraints have to be incorporated on top of amplitude constraints to enhance the accuracy. Recently, deep learning has shown promising results in optical imaging. However, it requires a large amount of training data. To address these issues, a novel approach called dual-input physics-driven network (DPNN) is proposed for lensless imaging. DPNN utilizes two diffractions recorded at different distances as inputs and uses an unsupervised approach that combines physical imaging model to reconstruct object information. DPNN adopts a U-Net 3+ architecture with a loss function of mean absolute error (MAE) to better capture diffraction features. DPNN achieves highly accurate reconstruction without requiring extensive data and being immune to background noise. Based on different diffraction intervals, noise levels, and imaging models, DPNN exhibits superior capabilities in peak signal-to-noise ratio and structural similarity compared with conventional methods, effectively achieving accurate phase or amplitude information reconstruction.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 11","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400029","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon-Based 850 nm GaAs/GaAsP-Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers 具有有源区位错阻挡层的硅基 850 nm GaAs/GaAsP 应变量子阱激光器
IF 3.7
Advanced Photonics Research Pub Date : 2024-06-19 DOI: 10.1002/adpr.202300348
Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren
{"title":"Silicon-Based 850 nm GaAs/GaAsP-Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers","authors":"Jian Li,&nbsp;Chen Jiang,&nbsp;Hao Liu,&nbsp;Yang Zhang,&nbsp;Hao Zhai,&nbsp;Xin Wei,&nbsp;Qi Wang,&nbsp;Gang Wu,&nbsp;Chuanchuan Li,&nbsp;Xiaomin Ren","doi":"10.1002/adpr.202300348","DOIUrl":"https://doi.org/10.1002/adpr.202300348","url":null,"abstract":"<p>A silicon-based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstrate on Si is reduced to 1.8 × 10<sup>7</sup> cm<sup>−2</sup>. The metal-organic chemical vapor deposition-grown laser structure with GaAs/GaAsP QW and InAlAs active region dislocation blocking layer are fabricated into broad-stripe Fabry–Perot laser diodes. A typical threshold current and threshold current density of 286 mA and 715 Acm<sup>−2</sup> are obtained with 2 mm cavity length and 20 um stripe width samples. A 94.2 mW single-facet output power lasing around 854 nm and a 0.314 WA<sup>−1</sup> slope efficiency is measured under RT CW operation. After a 10-min aging process, the tested laser can operate stably under continuous operation conditions at RT and the lifetime can be approximated using an exponential fitting curve, indicating a good life reliability of this QW laser.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 7","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202300348","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141565861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Asymmetrical Absorption and Surface-Enhanced Raman Scattering Enhancement by Silver Nanoflower Metasurface 银纳米花金属表面的不对称吸收和表面增强拉曼散射增强作用
IF 3.7
Advanced Photonics Research Pub Date : 2024-06-19 DOI: 10.1002/adpr.202400066
Yi-Jun Jen, Jia-Ming Wang, Bo-Wei Zhan, Ching-Wei Yu, Qian-Hao Li
{"title":"Asymmetrical Absorption and Surface-Enhanced Raman Scattering Enhancement by Silver Nanoflower Metasurface","authors":"Yi-Jun Jen,&nbsp;Jia-Ming Wang,&nbsp;Bo-Wei Zhan,&nbsp;Ching-Wei Yu,&nbsp;Qian-Hao Li","doi":"10.1002/adpr.202400066","DOIUrl":"https://doi.org/10.1002/adpr.202400066","url":null,"abstract":"<p>A metasurface composed of silver nanoflower arrays, which exhibit asymmetrical absorption and surface-enhanced Raman scattering (SERS) due to hybrid plasmonic effects, is reported. The silver nanoflowers are fabricated by oblique deposition of silver on a polymer nanohole array on a glass substrate, forming petal-like semicontinuous thin films on the inner walls of the holes. Depending on the deposition angle, three- or five-petal nanoflowers are obtained. The nanoflower arrays show strong reflection from the air side and broadband and wide-angle absorption from the glass side, as a result of transmission surface plasmon resonance and localized surface plasmon resonance, respectively. The three-petal structure, which absorbs most of the incident light from the glass side, induces a localized enhancement of electric field in the center of each nanohole, providing a high-sensitivity SERS substrate. The SERS performance of the metasurface by direct measurement and near-field simulation is demonstrated.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 12","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400066","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142862057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimizing SiGe–SiO2 Visible–Short-Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing 通过退火调节应变和缺陷之间的相互作用优化 SiGe-SiO2 可见短波红外光响应
IF 3.7
Advanced Photonics Research Pub Date : 2024-06-19 DOI: 10.1002/adpr.202300316
Muhammad Taha Sultan, Ionel Stavarache, Andrei Manolescu, Unnar Bjarni Arnalds, Valentin Serban Teodorescu, Halldor Gudfinnur Svavarsson, Snorri Ingvarsson, Magdalena Lidia Ciurea
{"title":"Optimizing SiGe–SiO2 Visible–Short-Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing","authors":"Muhammad Taha Sultan,&nbsp;Ionel Stavarache,&nbsp;Andrei Manolescu,&nbsp;Unnar Bjarni Arnalds,&nbsp;Valentin Serban Teodorescu,&nbsp;Halldor Gudfinnur Svavarsson,&nbsp;Snorri Ingvarsson,&nbsp;Magdalena Lidia Ciurea","doi":"10.1002/adpr.202300316","DOIUrl":"https://doi.org/10.1002/adpr.202300316","url":null,"abstract":"<p>SiGe-SiO<sub>2</sub>-based structures present high interest for their high photosensitivity from visible to short-wavelength infrared. Herein, two postdeposition annealing procedures, that is, rapid thermal annealing (RTA) and rapid-like furnace annealing (FA), are compared. Both RTA and FA are performed at 600 °C for 1 min for SiGe nanocrystals (NCs) formation in SiO<sub>2</sub> matrix in Si/SiO<sub>2</sub>/SiGe/SiO<sub>2</sub> structures deposited by magnetron sputtering. The FA imitates RTA resulting in enhanced spectral response. X-ray diffraction, transmission electron microscopy, and Raman spectroscopy are carried out showing Ge-rich SiGe NCs with 11.3 ± 1.2 nm size for RTA and 9.4 ± 0.8 nm for FA. Photocurrent spectra for both structures show several peaks that are annealing dependent. The photocurrent intensity for FA samples is ≈7 times higher than RTA samples while cutoff wavelengths are slightly different, that is, 1365 nm for FA and 1375 nm for RTA. The FA structures show (at −1.5 V) over 4 A W<sup>−1</sup> responsivity at 730 nm, 6.4 × 10<sup>7</sup> Jones detectivity at 735 nm, and 2.2 × 10<sup>7</sup> Jones at about 1210 nm. FA structures contain small SiGe NCs with incorporated residual strain, while RTA ones are formed of columnar SiGe NCs separated by SiGeO<sub><i>x</i></sub> amorphous regions and show increased tensile strain in the SiGe.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 8","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202300316","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141967289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of tert-Butylation on the Photophysics of Thermally Activated Delayed Fluorescence Emitters 叔丁基化对热激活延迟荧光发射器光物理学的影响
IF 3.7
Advanced Photonics Research Pub Date : 2024-06-19 DOI: 10.1002/adpr.202400022
Kalyani Thakur, Bas van der Zee, Oskar Sachnik, Constantin Haese, Robert Graf, Jasper J. Michels, Gert-Jan A. H. Wetzelaer, Charusheela Ramanan, Paul W. M. Blom
{"title":"Effect of tert-Butylation on the Photophysics of Thermally Activated Delayed Fluorescence Emitters","authors":"Kalyani Thakur,&nbsp;Bas van der Zee,&nbsp;Oskar Sachnik,&nbsp;Constantin Haese,&nbsp;Robert Graf,&nbsp;Jasper J. Michels,&nbsp;Gert-Jan A. H. Wetzelaer,&nbsp;Charusheela Ramanan,&nbsp;Paul W. M. Blom","doi":"10.1002/adpr.202400022","DOIUrl":"https://doi.org/10.1002/adpr.202400022","url":null,"abstract":"<p>Thermally activated delayed fluorescence (TADF) emitters potentially can provide organic light-emitting diodes with 100% internal quantum efficiency by harvesting triplet excitons. Generally, TADF emitters are small molecules that are not applicable for solution processability. The addition of <i>tert</i>-butyl groups to the periphery of TADF emitters has proven to improve their solubility in various organic solvents, reduce aggregation-induced quenching, and enhance the photoluminescence quantum yield (PLQY). This article studies the photophysical influence of the <i>tert</i>-butyl group attached to an emitter with a carbazole acceptor and a triazine donor. The resulting t3CzTrz-F is a blue–green TADF emitter, in which the addition of a <i>tert</i>-butyl group increases the rate of reverse intersystem crossing (rISC), while simultaneously decreasing the nonradiative decay rate substantially. In addition, dilution of t3CzTrz-F in a host matrix in film results in an enhanced PLQY, which is associated with a decrease in the nonradiative decay constant, while there is no change in the rISC rate. Through a solid-state NMR study, the change in rISC and nonradiative rate upon <i>tert</i>-butylation by enlarged intermolecular spacing and reduced vibrational and rotational freedom is rationalized, resulting in improved photophysical performance.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 11","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400022","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142579638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Widening the Gamut of Structural Colors of Gold via Insulator–Metal Bilayer Coatings 通过绝缘体-金属双层涂层拓宽金的结构颜色范围
IF 3.7
Advanced Photonics Research Pub Date : 2024-06-19 DOI: 10.1002/adpr.202300324
Md Abdur Rahman, Simon Wredh, Darya Burak, Joel K. W. Yang, So-Hye Cho, Seung Yong Lee, Sang Hoon Kim, Ji Young Byun
{"title":"Widening the Gamut of Structural Colors of Gold via Insulator–Metal Bilayer Coatings","authors":"Md Abdur Rahman,&nbsp;Simon Wredh,&nbsp;Darya Burak,&nbsp;Joel K. W. Yang,&nbsp;So-Hye Cho,&nbsp;Seung Yong Lee,&nbsp;Sang Hoon Kim,&nbsp;Ji Young Byun","doi":"10.1002/adpr.202300324","DOIUrl":"https://doi.org/10.1002/adpr.202300324","url":null,"abstract":"<p>\u0000Tuning the color of Au has been a longstanding problem in the luxury industry. Conventional approaches, involving Au alloying, compromise purity and demand distinct alloy compositions for each hue. This study demonstrates a lithography-free method for generating structural colors on a gold surface by adjusting the thickness of titanium dioxide, a high-index dielectric. While color tuneability is limited if TiO<sub>2</sub> is coated directly on the Au surface, a range of vivid colors can be generated if a 50−100 nm thick AuAl<sub>2</sub> underlayer is used. AuAl<sub>2</sub>, an accepted alloy for purple gold, broadens the color gamut, providing a protective coating without diminishing gold purity. The reflectance dip of the bilayer structure exhibits a significant red shift with increasing thickness of the TiO<sub>2</sub> layer, allowing diverse colors by TiO<sub>2</sub> insulator tuning. Simulation studies corroborate experimental results, affirming that coating a TiO<sub>2</sub> layer on the AuAl<sub>2</sub> underlayer yields a wide range of colors. This method, based on thin-film interference, shows promise for widespread use, offering a broad spectrum of structural colors in an industry striving for diverse Au color representation.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 8","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202300324","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141967290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Upconversion of Infrared Light by Graphitic Microparticles Due to Photoinduced Structural Modification 光诱导结构改性导致石墨微粒对红外光的上转换
IF 3.7
Advanced Photonics Research Pub Date : 2024-06-19 DOI: 10.1002/adpr.202300326
Rohin Sharma, Nishma Bhattarai, Rijan Maharjan, Lilia M. Woods, Nirajan Ojha, Ashim Dhakal
{"title":"Upconversion of Infrared Light by Graphitic Microparticles Due to Photoinduced Structural Modification","authors":"Rohin Sharma,&nbsp;Nishma Bhattarai,&nbsp;Rijan Maharjan,&nbsp;Lilia M. Woods,&nbsp;Nirajan Ojha,&nbsp;Ashim Dhakal","doi":"10.1002/adpr.202300326","DOIUrl":"https://doi.org/10.1002/adpr.202300326","url":null,"abstract":"<p>Recent reports of upconversion and white light emission from graphitic particles warrant an explanation of the physics behind the process. A model is offered, wherein the upconversion is facilitated by photoinduced electronic structure modification allowing for multiphoton processes. As per the prediction of the model, it is experimentally shown that graphite upconverts infrared light centered around 1.31 μm (0.95 eV) to broadband white light centered around 0.85 μm (1.46 eV). The results suggest that upconversion from shortwave infrared (≈3 μm, 0.45 eV) to visible region may be possible. The experiments show that the population dynamics of the electronic states involved in this upconversion process occur in the timescale of milliseconds.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"5 8","pages":""},"PeriodicalIF":3.7,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202300326","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141967297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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