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2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)最新文献

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Plasmonic nanorods for enhanced absorption in mid-wavelength infrared detectors 中波长红外探测器中增强吸收的等离子体纳米棒
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541514
M. Vallone, M. Goano, A. Tibaldi, S. Hanna, D. Eich, A. Wegmann, H. Figgemeier, G. Ghione, F. Bertazzi
{"title":"Plasmonic nanorods for enhanced absorption in mid-wavelength infrared detectors","authors":"M. Vallone, M. Goano, A. Tibaldi, S. Hanna, D. Eich, A. Wegmann, H. Figgemeier, G. Ghione, F. Bertazzi","doi":"10.1109/NUSOD52207.2021.9541514","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541514","url":null,"abstract":"The absorption properties of HgCdTe-based infrared detectors can be greatly increased in the mid-infrared band, by incorporating nanostructured plasmonic arrays on the illuminated detector face. The array periodicity, combined with the excitation of surface plasmon-polariton stationary modes, enhances the absorption efficiency by a substantial amount, allowing to reduce in turn the HgCdTe absorption thickness.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"28 1","pages":"35-36"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87336935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal and optical simulation of InP on Si nanocavity lasers InP在Si纳米腔激光器上的热光学模拟
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541426
P. Wen, P. Tiwari, K. Moselund, B. Gotsmann
{"title":"Thermal and optical simulation of InP on Si nanocavity lasers","authors":"P. Wen, P. Tiwari, K. Moselund, B. Gotsmann","doi":"10.1109/NUSOD52207.2021.9541426","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541426","url":null,"abstract":"Accurate prediction of thermal effects is important for scaled photonic devices as excessive heating may lead to device failure. This paper addresses numerical modeling of thermal properties of InP nanocavity lasers on Si combined with optical simulations in Lumerical and lasing threshold measurements. Different geometries with diameters ranging from 200 nm to 2 µm are studied, revealing an optimal diameter of around 1000 nm when considering both thermal effects and optical confinement. The temperature profile of the nanocavity lasers reveals that thinning the underlying SiO2 is the most efficient way to improve the thermal properties of the nanocavity lasers.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"9 1","pages":"77-78"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90513738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical properties of a waveguide-fed plasmonic nano-array through approximated scattering theory 用近似散射理论研究波导馈入等离子体纳米阵列的光学特性
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541521
B. Alam, A. Ferraro, A. d’Alessandro, R. Caputo, R. Asquini
{"title":"Optical properties of a waveguide-fed plasmonic nano-array through approximated scattering theory","authors":"B. Alam, A. Ferraro, A. d’Alessandro, R. Caputo, R. Asquini","doi":"10.1109/NUSOD52207.2021.9541521","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541521","url":null,"abstract":"We analyze the optical scattering properties of an array of Au nano-cylinders fabricated upon an ion-exchanged waveguide. The integrated systems is considered for fluoroscopy and Raman spectroscopy. Absorption, scattering and extinction have been calculated through a combination of Finite Difference Time Domain (FDTD) method and scattering theory. While a portion of the excitation signal interacts with the array, the remaining part flows through the waveguide, enabling areas within the simulation box that complicate the calculation through standard procedures. Our analysis includes adjustments and approximations addressing this issue and making full use of computational capabilities of FDTD.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"86 1","pages":"23-24"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84017268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Understanding the photon-photon resonance of DBR lasers using mode expansion method 用模展开法研究DBR激光器的光子-光子共振
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1007/s11082-022-04126-4
Da Chen, Ye Liu, Yonglin Yu
{"title":"Understanding the photon-photon resonance of DBR lasers using mode expansion method","authors":"Da Chen, Ye Liu, Yonglin Yu","doi":"10.1007/s11082-022-04126-4","DOIUrl":"https://doi.org/10.1007/s11082-022-04126-4","url":null,"abstract":"","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"1 1","pages":"87-88"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72665389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Modeling Efficiency of InAs-Based Near-Field Thermophotovoltaic Devices 基于inas的近场热光伏器件的建模效率
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541515
G. Forcade, C. Valdivia, Shengyuan Lu, S. Molesky, Alejandro W. Rodriguez, J. Krich, R. St-Gelais, K. Hinzer
{"title":"Modeling Efficiency of InAs-Based Near-Field Thermophotovoltaic Devices","authors":"G. Forcade, C. Valdivia, Shengyuan Lu, S. Molesky, Alejandro W. Rodriguez, J. Krich, R. St-Gelais, K. Hinzer","doi":"10.1109/NUSOD52207.2021.9541515","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541515","url":null,"abstract":"Enormous potential lies in waste-heat recycling for the world’s industrial sector. Portable solid-state modules are a universal low-maintenance method to recycle this waste-heat. One such technology, near-field thermophotovoltaics (NFTPV), relies on a heat source in extreme proximity (<200 nm) to a photovoltaic cell, which then generates electricity. We developed an optoelectronic model where electron-hole pair generation rates are calculated using fluctuation electrodynamics, which we input into an electrical model based in Synopsys TCAD Sentaurus. Using our optoelectronic model, we optimized a novel InAs-based NFTPV device for a 700 K radiator 100 nm away from the PV cell with an efficiency reaching ~17%, more than an order of magnitude higher than current NFTPV device efficiencies.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"82 1","pages":"53-54"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72713209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ge-on-Si waveguide photodetectors: multiphysics modeling and experimental validation 锗硅波导光电探测器:多物理场建模和实验验证
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541424
M. Alasio, M. Goano, A. Tibaldi, F. Bertazzi, S. Namnabat, Donald Adams, P. Gothoskar, F. Forghieri, G. Ghione, M. Vallone
{"title":"Ge-on-Si waveguide photodetectors: multiphysics modeling and experimental validation","authors":"M. Alasio, M. Goano, A. Tibaldi, F. Bertazzi, S. Namnabat, Donald Adams, P. Gothoskar, F. Forghieri, G. Ghione, M. Vallone","doi":"10.1109/NUSOD52207.2021.9541424","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541424","url":null,"abstract":"This work compares a multiphysics modeling approach with experimental measurements of two Ge-on-Si butt-coupled waveguide photodetectors. The coupled three-dimensional electromagnetic and electrical simulation of the frequency response shows promising agreement with the measurements at 1310 nm, and provides detailed information about significant microscopic quantities, such as the spatial distribution of the optical generation rate.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"53 1","pages":"37-38"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74466501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photoresponse uniformity in planar InP/InGaAs avalanche photodiodes 平面InP/InGaAs雪崩光电二极管的光响应均匀性
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541432
A. Walker, O. Pitts
{"title":"Photoresponse uniformity in planar InP/InGaAs avalanche photodiodes","authors":"A. Walker, O. Pitts","doi":"10.1109/NUSOD52207.2021.9541432","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541432","url":null,"abstract":"Numerical simulation of the electric field distribution and photocurrent response of a planar InP/InGaAs avalanche photodiode is presented as a function of varying multiplication width. The Zn dopant diffusion front is obtained by numerically simulating the diffusion process. The simulation results indicate that while a local peak value of the electric field is observed near the device edge, it is not associated with a significant increase in the photocurrent response.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"289 1","pages":"41-42"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74741001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamic Response Prediction of Bi-State Emission of Quantum Dot Lasers Based on Extreme Learning Machine 基于极限学习机的量子点激光器双态发射动态响应预测
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541499
Wild F. S. Santos, E. Filho, G. Thé
{"title":"Dynamic Response Prediction of Bi-State Emission of Quantum Dot Lasers Based on Extreme Learning Machine","authors":"Wild F. S. Santos, E. Filho, G. Thé","doi":"10.1109/NUSOD52207.2021.9541499","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541499","url":null,"abstract":"Dual-state emission is an phenomenon which takes place in Quantum Dot Lasers at different temperature and operating conditions. In this study, we investigate that issue from a nonlinear regression model based on Extreme Learning Machine, which revealed to be able to predict the spectrally resolved transient response of InAs/InGaAs quantum dot laser with error performance as low as 0.54%.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"9 1","pages":"143-144"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81016009","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance of Plasmonic Side-Coupled Waveguide Photodetector with Varying Schottky Barrier Height 变肖特基势垒高度等离子体侧耦合波导光电探测器的性能
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541438
Q. Ding, A. Schenk
{"title":"Performance of Plasmonic Side-Coupled Waveguide Photodetector with Varying Schottky Barrier Height","authors":"Q. Ding, A. Schenk","doi":"10.1109/NUSOD52207.2021.9541438","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541438","url":null,"abstract":"The impact of Schottky barrier height (SBH) on the performance of a side-coupled plasmonic waveguide photodetector (WGPD) is theoretically investigated by 3D opto-electrical simulations. A general decrease of the cut-off frequency is observed for all studied barrier heights (0.1 eV to 0.6 eV), most pronounced in the range (0.3 - 0.4) eV. The degradation is an electrostatic effect caused by the formation of the Schottky barrier in the i-region of the device.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"24 1","pages":"33-34"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79066657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine Learning & multiscale simulations: toward fast screening of organic semiconductor materials 机器学习与多尺度模拟:迈向有机半导体材料的快速筛选
2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI: 10.1109/NUSOD52207.2021.9541414
M. Rinderle, A. Gagliardi
{"title":"Machine Learning & multiscale simulations: toward fast screening of organic semiconductor materials","authors":"M. Rinderle, A. Gagliardi","doi":"10.1109/NUSOD52207.2021.9541414","DOIUrl":"https://doi.org/10.1109/NUSOD52207.2021.9541414","url":null,"abstract":"Organic semiconductor devices promise cost-efficient processability at low temperatures, but the usually amorphous materials suffer from low charge carrier mobility. The search for high mobility organic semiconductor materials has thrived data science and Machine Learning approaches to screen the vast amount of possible organic materials. We present a multiscale simulation model based on machine learned transfer integrals to compute the charge carrier mobility in organic thin films.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"25 1","pages":"1-2"},"PeriodicalIF":0.0,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80344393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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