{"title":"Performance of Plasmonic Side-Coupled Waveguide Photodetector with Varying Schottky Barrier Height","authors":"Q. Ding, A. Schenk","doi":"10.1109/NUSOD52207.2021.9541438","DOIUrl":null,"url":null,"abstract":"The impact of Schottky barrier height (SBH) on the performance of a side-coupled plasmonic waveguide photodetector (WGPD) is theoretically investigated by 3D opto-electrical simulations. A general decrease of the cut-off frequency is observed for all studied barrier heights (0.1 eV to 0.6 eV), most pronounced in the range (0.3 - 0.4) eV. The degradation is an electrostatic effect caused by the formation of the Schottky barrier in the i-region of the device.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"24 1","pages":"33-34"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD52207.2021.9541438","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The impact of Schottky barrier height (SBH) on the performance of a side-coupled plasmonic waveguide photodetector (WGPD) is theoretically investigated by 3D opto-electrical simulations. A general decrease of the cut-off frequency is observed for all studied barrier heights (0.1 eV to 0.6 eV), most pronounced in the range (0.3 - 0.4) eV. The degradation is an electrostatic effect caused by the formation of the Schottky barrier in the i-region of the device.