变肖特基势垒高度等离子体侧耦合波导光电探测器的性能

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI:10.1109/NUSOD52207.2021.9541438

Q. Ding, A. Schenk

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引用次数: 0

摘要

通过三维光电仿真，从理论上研究了肖特基势垒高度(SBH)对侧耦合等离子波导光电探测器性能的影响。在所研究的势垒高度(0.1 eV至0.6 eV)范围内，截止频率普遍下降，在(0.3 - 0.4)eV范围内最为明显。这种退化是由于在器件的i区形成肖特基势垒引起的静电效应。

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Performance of Plasmonic Side-Coupled Waveguide Photodetector with Varying Schottky Barrier Height

The impact of Schottky barrier height (SBH) on the performance of a side-coupled plasmonic waveguide photodetector (WGPD) is theoretically investigated by 3D opto-electrical simulations. A general decrease of the cut-off frequency is observed for all studied barrier heights (0.1 eV to 0.6 eV), most pronounced in the range (0.3 - 0.4) eV. The degradation is an electrostatic effect caused by the formation of the Schottky barrier in the i-region of the device.

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2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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