平面InP/InGaAs雪崩光电二极管的光响应均匀性

2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2021-09-13 DOI:10.1109/NUSOD52207.2021.9541432

A. Walker, O. Pitts

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引用次数: 0

摘要

本文给出了平面InP/InGaAs雪崩光电二极管的电场分布和光电流响应随倍增宽度变化的数值模拟。通过对扩散过程的数值模拟，得到了锌掺杂物的扩散前沿。仿真结果表明，虽然在器件边缘附近观察到电场的局部峰值，但它与光电流响应的显着增加无关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Photoresponse uniformity in planar InP/InGaAs avalanche photodiodes

Numerical simulation of the electric field distribution and photocurrent response of a planar InP/InGaAs avalanche photodiode is presented as a function of varying multiplication width. The Zn dopant diffusion front is obtained by numerically simulating the diffusion process. The simulation results indicate that while a local peak value of the electric field is observed near the device edge, it is not associated with a significant increase in the photocurrent response.

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2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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