M. Alasio, M. Goano, A. Tibaldi, F. Bertazzi, S. Namnabat, Donald Adams, P. Gothoskar, F. Forghieri, G. Ghione, M. Vallone
{"title":"锗硅波导光电探测器:多物理场建模和实验验证","authors":"M. Alasio, M. Goano, A. Tibaldi, F. Bertazzi, S. Namnabat, Donald Adams, P. Gothoskar, F. Forghieri, G. Ghione, M. Vallone","doi":"10.1109/NUSOD52207.2021.9541424","DOIUrl":null,"url":null,"abstract":"This work compares a multiphysics modeling approach with experimental measurements of two Ge-on-Si butt-coupled waveguide photodetectors. The coupled three-dimensional electromagnetic and electrical simulation of the frequency response shows promising agreement with the measurements at 1310 nm, and provides detailed information about significant microscopic quantities, such as the spatial distribution of the optical generation rate.","PeriodicalId":6780,"journal":{"name":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"53 1","pages":"37-38"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ge-on-Si waveguide photodetectors: multiphysics modeling and experimental validation\",\"authors\":\"M. Alasio, M. Goano, A. Tibaldi, F. Bertazzi, S. Namnabat, Donald Adams, P. Gothoskar, F. Forghieri, G. Ghione, M. Vallone\",\"doi\":\"10.1109/NUSOD52207.2021.9541424\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work compares a multiphysics modeling approach with experimental measurements of two Ge-on-Si butt-coupled waveguide photodetectors. The coupled three-dimensional electromagnetic and electrical simulation of the frequency response shows promising agreement with the measurements at 1310 nm, and provides detailed information about significant microscopic quantities, such as the spatial distribution of the optical generation rate.\",\"PeriodicalId\":6780,\"journal\":{\"name\":\"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"volume\":\"53 1\",\"pages\":\"37-38\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD52207.2021.9541424\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD52207.2021.9541424","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ge-on-Si waveguide photodetectors: multiphysics modeling and experimental validation
This work compares a multiphysics modeling approach with experimental measurements of two Ge-on-Si butt-coupled waveguide photodetectors. The coupled three-dimensional electromagnetic and electrical simulation of the frequency response shows promising agreement with the measurements at 1310 nm, and provides detailed information about significant microscopic quantities, such as the spatial distribution of the optical generation rate.
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