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2021 International Conference on IC Design and Technology (ICICDT)最新文献

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Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers 溶液加工MO/ 2d材料堆叠开关层忆阻器的阻性开关性能
2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2021-09-15 DOI: 10.1109/ICICDT51558.2021.9626507
Zongjie Shen, Chun Zhao, I. Mitrovic, Cezhou Zhao, Yina Liu, Li Yang
{"title":"Resistive switching performance of memristor with solution-processed stacked MO/2D-materials switching layers","authors":"Zongjie Shen, Chun Zhao, I. Mitrovic, Cezhou Zhao, Yina Liu, Li Yang","doi":"10.1109/ICICDT51558.2021.9626507","DOIUrl":"https://doi.org/10.1109/ICICDT51558.2021.9626507","url":null,"abstract":"In this work, the RRAM device with the structure of Ag/AlOx/MXene/ITO was fabricated with the stacked solution-processed switching layers. The device operated with a low voltage around ~2.0 V and exhibited a stable ON/OFF ratio larger than 104. Apart from excellent stability with endurance cycles of more than 100 and retention time of longer than 104 s, typical synaptic behaviors including long-term potentiation and depression (LTP/LTD) were also obtained, which had a positive influence on the following pattern recognition process and the average value of the recognition was around ~90%.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"24 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76632101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All-solid-state Ion Doping Synaptic Transistor for Bionic Neural computing 仿生神经计算用全固态离子掺杂突触晶体管
2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2021-09-15 DOI: 10.1109/ICICDT51558.2021.9626468
Q. Wang, C. Zhao, W. Liu, H. Zalinge, Y. Liu, L. Yang, C. Zhao
{"title":"All-solid-state Ion Doping Synaptic Transistor for Bionic Neural computing","authors":"Q. Wang, C. Zhao, W. Liu, H. Zalinge, Y. Liu, L. Yang, C. Zhao","doi":"10.1109/ICICDT51558.2021.9626468","DOIUrl":"https://doi.org/10.1109/ICICDT51558.2021.9626468","url":null,"abstract":"Artificial synapses are the critical component for low-power neuromorphic computing, which surpasses the limitations of von Neumann’s structure. Compared with two-terminal memristors and three-terminal transistors with wire formation and charge trapping mechanisms, the emerging electrolytic gated transistor (EGT) has proven to be a promising neuromorphic application due to its outstanding analog switching performance. Candidate. This paper presents a new low-temperature solution-based oxide thin film transistor, which uses an ion-doped dielectric layer. The device also has a low-noise linear conductance update and a relatively high Gmax/Gmin. The realization of ANN neuromorphic calculation has nearly ideal accuracy. These results highlight the potential of EGT based on AlOx-Li/InOx thin-film transistors in the next generation of low-power electronics outside of the von Neumann architecture.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"8 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78600706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Deterministic Tagging Technology for Device Authentication 用于设备认证的确定性标签技术
2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2021-09-15 DOI: 10.1109/ICICDT51558.2021.9626514
J. Ahn, Jihong Kim, J. Kopanski, Y. Obeng
{"title":"Deterministic Tagging Technology for Device Authentication","authors":"J. Ahn, Jihong Kim, J. Kopanski, Y. Obeng","doi":"10.1109/ICICDT51558.2021.9626514","DOIUrl":"https://doi.org/10.1109/ICICDT51558.2021.9626514","url":null,"abstract":"This paper discusses the development of a rapid, large-scale integration of deterministic dopant placement technique for encoding information in physical structures at the nanoscale. The doped structures bestow a customizable radiofrequency (RF) electronic signature, which could be leveraged into a distinctive identification tag. This will allow any manufactured item (integrated circuit, pharmaceutical, etc.) to be uniquely authenticatable. Applications of this technology include enabling a secure Internet of Things (IoT) and eliminating counterfeit products.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"18 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73600795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment 一种环境友好的溶液处理ZrLaO栅极介质，适用于恶劣辐射环境下的大面积应用
2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2021-09-15 DOI: 10.1109/ICICDT51558.2021.9626540
Yuxiao Fang, W. Y. Xu, I. Mitrovic, Li Yang, Chun Zhao, Cezhou Zhao
{"title":"An environmentally friendly solution-processed ZrLaO gate dielectric for large-area applications in the harsh radiation environment","authors":"Yuxiao Fang, W. Y. Xu, I. Mitrovic, Li Yang, Chun Zhao, Cezhou Zhao","doi":"10.1109/ICICDT51558.2021.9626540","DOIUrl":"https://doi.org/10.1109/ICICDT51558.2021.9626540","url":null,"abstract":"In this work, an eco-friendly aqueous solution-processed ZrLaO dielectric is demonstrated for large-area application in the harsh radiation environment. Appropriate La doping (10% La) into ZrO<inf>x</inf> could suppress the formation of V<inf>o</inf> and improve the InO<inf>x</inf>/ZrLaO interface. The Zr<inf>0.9</inf>La<inf>0.1</inf>O<inf>y</inf> thin films remained stable under 144 krad (SiO<inf>2</inf>) gamma-ray irradiation, no distinct composition variation or property degradation were observed. The resistor-loaded inverter based on InO<inf>x</inf>/Zr<inf>0.9</inf>La<inf>0.1</inf>O<inf>y</inf> TFT demonstrated full swing characteristics with a gain of 13.3 at 4 V and remained 91% gain after 103 krad (SiO<inf>2</inf>) irradiation.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"85 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80333378","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bioinspired mechano artificial synapse thin-film transistor 仿生机械人工突触薄膜晶体管
2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2021-09-15 DOI: 10.1109/ICICDT51558.2021.9626472
Y. X. Cao, C. Zhao, Y. Liu, L. Yang, H. Zalinge, C. Zhao
{"title":"Bioinspired mechano artificial synapse thin-film transistor","authors":"Y. X. Cao, C. Zhao, Y. Liu, L. Yang, H. Zalinge, C. Zhao","doi":"10.1109/ICICDT51558.2021.9626472","DOIUrl":"https://doi.org/10.1109/ICICDT51558.2021.9626472","url":null,"abstract":"This research proposes a unique self-powered synaptic transistor structure that can be used to simulate synaptic function. The voltage is provided by the triboelectric nanogenerator without using additional voltage to generate a presynaptic peak. On this basis, the device can be sewed on the clothes to transmit a signal or alarm device.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"82 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87183667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Harnessing intrinsic memristor randomness with Bayesian neural networks 利用贝叶斯神经网络控制内禀忆阻器随机性
2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2021-09-15 DOI: 10.1109/ICICDT51558.2021.9626535
T. Dalgaty, E. Vianello, D. Querlioz
{"title":"Harnessing intrinsic memristor randomness with Bayesian neural networks","authors":"T. Dalgaty, E. Vianello, D. Querlioz","doi":"10.1109/ICICDT51558.2021.9626535","DOIUrl":"https://doi.org/10.1109/ICICDT51558.2021.9626535","url":null,"abstract":"Memristors could be a key driver in the development of new ultra-low energy edge neural network hardware. However, the technology has one major drawback – memristor properties are inherently random. Information cannot be programmed in a precise manner. As a result, efforts to exploit the technology often result in neural network models that are less performant than their software counterparts or require mitigation techniques that can negate potential energy benefits. In this paper we summarise how, alternatively, these intrinsic device properties, previously regarded as non-idealities to be mitigated, are well suited for an alternative approach - Bayesian machine learning. Like resistive memory device properties, Bayesian parameters are described by distributions of probability - offering a more natural pairing of device and algorithm.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"157 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76629805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Approaches for Optimizing Near Infrared Si Photodetectors Based on Internal Photoemission 基于内光电发射的近红外硅光电探测器优化方法
2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2021-09-15 DOI: 10.1109/ICICDT51558.2021.9626503
H. Wen, L. Augel, J. Knobbe
{"title":"Approaches for Optimizing Near Infrared Si Photodetectors Based on Internal Photoemission","authors":"H. Wen, L. Augel, J. Knobbe","doi":"10.1109/ICICDT51558.2021.9626503","DOIUrl":"https://doi.org/10.1109/ICICDT51558.2021.9626503","url":null,"abstract":"Backside illuminated Si Schottky barrier photodetectors facilitating the effect of internal photoemission are a promising candidate to extend the detection range of Si photodetectors in the short-wavelength infrared range. The detectivity – a merit that is usually limited for planar Schottky photodetectors – can be improved by photonic nanostructures like pyramids that offer a path to increase responsivity and reduce dark currents. We took two approaches based on nanopyramids and investigated their potential to improve the detectivity. By partially metalizing the pyramid, a reduction in dark current is expected; through optimizing the structural parameters, the reflection from the device can be diminished. Using an easy-to-access geometrical explanation as well as finite-difference time-domain simulation, we derived basic design rules and the limitation in improvement one can expect from these approaches.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"48 3 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73057906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of an All-digital Time Domain Analog-to-digital Converter Based on Ring Delay Line Technology 基于环延迟线技术的全数字时域模数转换器设计
2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2021-09-15 DOI: 10.1109/ICICDT51558.2021.9626479
Hua Fan, Tong Xu, Jianming Liu, Q. Feng
{"title":"Design of an All-digital Time Domain Analog-to-digital Converter Based on Ring Delay Line Technology","authors":"Hua Fan, Tong Xu, Jianming Liu, Q. Feng","doi":"10.1109/ICICDT51558.2021.9626479","DOIUrl":"https://doi.org/10.1109/ICICDT51558.2021.9626479","url":null,"abstract":"A novel voltage-to-time converter (VTC) with high linearity and wide dynamic input range is used for low-power time-domain ADC in this paper, which combines the advantages of body bias technique and current mirror technique. The proposed time-domain ADC (T-ADC) consists of ring delay line, counter, encoder and subtractor. The time-domain ADC is implemented based on the XFAB 0.18μm COMS standard process, and the overall power consumption is 37.7μW under a 1.8V supply voltage. The simulated ENOB, SNDR, and SFDR are 10.72-bits, 66.31dB, and 76.13dB respectively at the Nyquist frequency.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"35 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80734065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon-based sub-THz PA for Wireless Communication 用于无线通信的硅基次太赫兹PA
2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2021-09-15 DOI: 10.1109/ICICDT51558.2021.9626493
Hao Gao
{"title":"Silicon-based sub-THz PA for Wireless Communication","authors":"Hao Gao","doi":"10.1109/ICICDT51558.2021.9626493","DOIUrl":"https://doi.org/10.1109/ICICDT51558.2021.9626493","url":null,"abstract":"This paper presents a D-band power amplifier design consideration and its extension on a D-band transmitter. In a sub-THz transmitter, its output power and efficiency are determined by the power amplifier. In this work, the design consideration of a 150 GHz power amplifier with 7.1 Psat is presented with a 0.13 μm SiGe technology. In a direction-conversion architecture-based transmitter, a mixer is important for RF-to-LO isolation. A detailed topology analysis is also provided in this paper. A 150 GHz transmitter with an on-chip antenna in 0.13 μm SiGe technology is presented with its 10 cm wireless measured data is presented in this paper.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"3 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85005277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic DFF-NAND and DFF-NOR logic circuits based on GaN MIS-HEMT 基于GaN mishemt的单片DFF-NAND和DFF-NOR逻辑电路
2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2021-09-15 DOI: 10.1109/ICICDT51558.2021.9626401
Yuhao Zhu, Miao Cui, Ang Li, Fan Li, H. Wen, Wen Liu
{"title":"Monolithic DFF-NAND and DFF-NOR logic circuits based on GaN MIS-HEMT","authors":"Yuhao Zhu, Miao Cui, Ang Li, Fan Li, H. Wen, Wen Liu","doi":"10.1109/ICICDT51558.2021.9626401","DOIUrl":"https://doi.org/10.1109/ICICDT51558.2021.9626401","url":null,"abstract":"The NAND, NOR, AND and OR logic gate circuits are fabricated by monolithic integrated E/D mode MIS-HEMTs. Then the NOR and NAND based data flip-flop (DFF) structure are realized on the same wafer. For the above logic circuits, the driver voltage is up to 9 V. The experimental results fit with the expected logical truth table, which successfully achieved the logical judgement function. It also proves the potential of MIS-HEMT in the production of large input voltage, high-frequency logic circuits.","PeriodicalId":6737,"journal":{"name":"2021 International Conference on IC Design and Technology (ICICDT)","volume":"9 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2021-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75348104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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