All-solid-state Ion Doping Synaptic Transistor for Bionic Neural computing

Abstract

Artificial synapses are the critical component for low-power neuromorphic computing, which surpasses the limitations of von Neumann’s structure. Compared with two-terminal memristors and three-terminal transistors with wire formation and charge trapping mechanisms, the emerging electrolytic gated transistor (EGT) has proven to be a promising neuromorphic application due to its outstanding analog switching performance. Candidate. This paper presents a new low-temperature solution-based oxide thin film transistor, which uses an ion-doped dielectric layer. The device also has a low-noise linear conductance update and a relatively high Gmax/Gmin. The realization of ANN neuromorphic calculation has nearly ideal accuracy. These results highlight the potential of EGT based on AlOx-Li/InOx thin-film transistors in the next generation of low-power electronics outside of the von Neumann architecture.