基于GaN mishemt的单片DFF-NAND和DFF-NOR逻辑电路

2021 International Conference on IC Design and Technology (ICICDT) Pub Date : 2021-09-15 DOI:10.1109/ICICDT51558.2021.9626401

Yuhao Zhu, Miao Cui, Ang Li, Fan Li, H. Wen, Wen Liu

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引用次数: 5

摘要

NAND、NOR、AND和OR逻辑门电路由单片集成E/D模式mishemt制作。然后在同一晶片上实现了基于NOR和NAND的数据触发器结构。对于上述逻辑电路，驱动电压高达9v。实验结果符合预期的逻辑真值表，成功实现了逻辑判断功能。这也证明了miss - hemt在生产大输入电压、高频逻辑电路方面的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Monolithic DFF-NAND and DFF-NOR logic circuits based on GaN MIS-HEMT

The NAND, NOR, AND and OR logic gate circuits are fabricated by monolithic integrated E/D mode MIS-HEMTs. Then the NOR and NAND based data flip-flop (DFF) structure are realized on the same wafer. For the above logic circuits, the driver voltage is up to 9 V. The experimental results fit with the expected logical truth table, which successfully achieved the logical judgement function. It also proves the potential of MIS-HEMT in the production of large input voltage, high-frequency logic circuits.

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2021 International Conference on IC Design and Technology (ICICDT)

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