2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)最新文献_第6页

Reproducibility and free spectral range (FSR) control of a high quality factor — 1D photonic crystal (PhC) extended cavity 高品质因子-一维光子晶体扩展腔的再现性和自由光谱范围控制

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355023

A. M. Md Zain, B. Majlis, Richard M. De La Rue

引用次数: 2

RF sputtered PZT thin film at MPB for piezoelectric harvester devices 用于压电收割机器件的射频溅射PZT薄膜

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355018

Mohd H. S. Alrashdan, A. A. Hamzah, B. Majlis

{"title":"RF sputtered PZT thin film at MPB for piezoelectric harvester devices","authors":"Mohd H. S. Alrashdan, A. A. Hamzah, B. Majlis","doi":"10.1109/RSM.2015.7355018","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355018","url":null,"abstract":"Pb(ZrxTi1-x)O3 (PZT) thin films deposition at morphotropic phase boundary (MPB) and low temperature became one of the most promising fields in microelectromechanical systems (MEMS) for power harvesting applications, especially in a low frequency range, due to its large electromechanically coupling coefficient, dielectric and piezoelectric constants. PZT thin film deposition using RF sputtering has the advantage over other deposition methods due to its simplicity, better parameter control, cheapness, and requires a low deposition temperature. The influence of plasma parameter (RF power, Ar gas content and pressure) is studied to deposit the optimum Pb Zr 0.52 Ti 0.48 O3 thin film with 1μm thickness. The NTI nano film RF sputtering system was used to deposit the 36 samples of PZT thin film in (Si3N4/Si) substrate, the working temperature is at 20C°. The post annealing process with conventional treatment at 650 C° for 60 min is done. MERLIN compact FESEM is used to measure the cross section thickness of samples at four different points and an average is taken, thickness standard deviation and the radius of curvature is measured to check thin film uniformity and flatness. To determine the plasma parameters necessary for optimum thin film deposition, Energy dispersion spectroscopy (EDS) is used to analyze the chemical composition of deposited PZT thin film and found that 250 W of RF power, 15mT of Ar gas pressure, and 18 Sccm of Ar gas content is necessary for Pb Zr 0.52 Ti 0.48 O3 thin film deposition. A XRD technique is used to study phase formation in optimized PZT thin film. The perovskite phase (100, 110, and 111,200) is observed with maximum peak intensity of 1200 counts/ second for 110 phases. Piezoelectric constant d33 of 413 pm/v and 0.68 electromechanical coupling coefficient, which make the optimize PZT thin film (Pb Zr 0.52 Ti 0.48 O3) suitable in power harvesting devices at low frequency rang such as cardiac pacemaker.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"127 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90280206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Fabrication of gold strip thin film on glass substrate for plasmonic demodulation application 等离子体解调用玻璃基板金条薄膜的制备

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355027

W. M. Mukhtar, S. Shaari, P. Menon, H. Razak

{"title":"Fabrication of gold strip thin film on glass substrate for plasmonic demodulation application","authors":"W. M. Mukhtar, S. Shaari, P. Menon, H. Razak","doi":"10.1109/RSM.2015.7355027","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355027","url":null,"abstract":"Plasmonic demodulation is a process where an optical signal due to the generation of surface plasmon polaritons (SPP) reacts with electrical domain, resulted an inverse relationship between them. In this study, fabrication processes of gold strip thin films on the glass substrates are presented. For an optimization purpose of electro-optics effect observation, the width of gold strip thin film is set as 0.5mm, which is equal to the laser beam spot diameter. First, the strip pattern is printed on a commercial transparent plastic slide. The pattern transfer process from plastic slide to glass slide is performed using UV light. Once the pattern is formed on the glass substrate, gold thin film with varies thicknesses namely 30nm, 50nm and 100nm are deposited by monitoring the sputtering time; via d.c. sputtering on the glass substrate which is partly coated with the positive photoresist. The photoresist is removed by immersing the coated glass slide in acetone solution for 15 minutes, follow with DI water for three seconds in an ultrasonic bath. This yields to the establishment of gold strip thin films with dimension of width 0.5mm × length 10mm. An optimal plasmonic demodulation process is successfully acquired by using gold metal strip with thickness of 30nm and higher laser power level, namely P=1.5mW. In a conclusion, we believe that the output of this study will contribute a significant impact to the development of the plasmonic demodulator as an active device.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77747934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Surface properties of modified nanodiamond on silicon via a spray method 喷雾法制备硅基改性纳米金刚石的表面性能

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355035

J. Nurismaliza, A. R. Ruslinda, M. Arshad, S. Gopinath, M. F. Fatin, C. Voon, K. L. Foo, U. Hashim, R. M. Ayub

引用次数: 0

Transparent mask design and fabrication of interdigitated electrodes 交叉指状电极的透明掩膜设计与制造

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355014

P. Adelyn, U. Hashim, Y. Ha, M. K. Md Arshad, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo

引用次数: 3

The effect of aluminum nanoparticle on the seebeck coefficient of biomedical thermoelectric devices 纳米铝颗粒对医用热电器件塞贝克系数的影响

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355034

A. H. Azaddin, R. M. Ayub, A. H. Azman, M. K. Md Arshad, M. Fathil, U. Hashim, A. R. Ruslinda, S. Gopinath, C. Voon, K. L. Foo

{"title":"The effect of aluminum nanoparticle on the seebeck coefficient of biomedical thermoelectric devices","authors":"A. H. Azaddin, R. M. Ayub, A. H. Azman, M. K. Md Arshad, M. Fathil, U. Hashim, A. R. Ruslinda, S. Gopinath, C. Voon, K. L. Foo","doi":"10.1109/RSM.2015.7355034","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355034","url":null,"abstract":"The Seebeck coefficient is a parameter to measure the efficiency of materials in generating thermoelectric voltage from certain temperature gradient. In this work, the effect of aluminum nano particle on the Seebeck coefficient for silicon based thermoelectric power generator is investigated. Thermoelectric devices which consist of arrays of doped phosphorus and boron channels have been fabricated on silicon wafers via standard CMOS fabrication processes. Aluminum nano particles were then integrated into the doped n-channel, before the fabrication step is completed with the metalization process. Temperature gradients across the two device terminals were created by resistive heating and the output voltages were measured. The results show that there is a substantial improvement in the calculated Seebeck coefficient where the device which been incorporated with 40 nm aluminum nano particles yields the average value of 3390 μV/K to that of control device which yields 784 μV/K. Furthermore, the output voltage is measured to be in the range of 40 mV for the temperature gradient of 12 K, making it to be very viable and attractive for biomedical applications.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"98 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91175785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Laser micromachining of Circular Transmission Line Model (CTLM) of Al contacts on n-type SiC/Si chips n型SiC/Si芯片Al触点圆形传输线模型的激光微加工

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355003

N. F. Mohd Nasir, K. A. Hassan, P. Leech, G. K. Reeves, A. Holland, Y. Wahab, M. Mazalan, P. Tanner

引用次数: 1

Integrated of IDEs with TiO2 nanoparticles thin films for pH sensor ide与TiO2纳米薄膜集成的pH传感器

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355037

A. Muaz, U. Hashim, N. Azizah, M. Arshad, K. L. Foo, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon

{"title":"Integrated of IDEs with TiO2 nanoparticles thin films for pH sensor","authors":"A. Muaz, U. Hashim, N. Azizah, M. Arshad, K. L. Foo, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon","doi":"10.1109/RSM.2015.7355037","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355037","url":null,"abstract":"The combination of nano/micro technology, biology and metal oxides materials have seen great advances in the development of transducers and biochips for biological and medical fields. In this work, TiO2 nanoparticles thin films were prepared using sol-gel method and annealed at 400°C to promote nanoparticles crystallization in anatase phase. The influence of surface topologies and uniformity distribution of TiO2 thin films were investigated using AFM, whereby the surface structural was determined by XRD. The conventional photo-lithography technique was applied in the fabrication of micro-gap interdigitated electrodes (IDEs) with 7 μm gap size between the adjacent fingers. This device will be employed as an electrochemical sensor to detect the bio-molecules thru electrical characteristics. The fabricated micro-gap Au/Ti IDEs gap size was further inspected using the scanning electron microscopy (SEM). Purchased pH buffer solutions which varied from pH4 to pH 12 is dropped on the micro-gap IDEs and the effect on it is investigated for the application in pH measurement.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"21 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83223492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

Printability and structural analysis of Yttrium iron garnet thick film with low firing temperature 低温烧成钇铁石榴石厚膜的印刷性能及结构分析

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355017

I. H. Hasan, M. Hamidon, I. Ismail, R. Osman, S. Azhari

引用次数: 3

Electron concentration behavior in junctionless vs junction SOI n-MOSFET transistor 无结vs结SOI n-MOSFET晶体管的电子浓度行为

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7354982

A. Huda, M. K. Md Arshad, N. Othman, C. Voon, R. M. Ayub, S. Gopinath, K. L. Foo, A. R. Ruslinda, U. Hashim, H. C. Lee, P. Adelyn, S. M. Kahar

引用次数: 1