2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)最新文献_第7页

Impact of size variation in junctionless vs junction planar SOI n-MOSFET transistor 无结与平面soin - mosfet晶体管尺寸变化的影响

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7354983

A. Huda, M. K. Md Arshad, N. Othman, C. Voon, R. M. Ayub, S. Gopinath, K. L. Foo, A. R. Ruslinda, U. Hashim, H. C. Lee, P. Adelyn, S. M. Kahar

引用次数: 4

Comparison of seven cantilever designs for piezoelectric energy harvester based On Mo/AlN/3C-SiC Mo/AlN/3C-SiC压电能量采集器悬臂梁设计比较

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7354987

A. Iqbal, F. Mohd-Yasin

引用次数: 11

Investigation on developing of a piezoresistive pressure sensor for foot plantar measurement system 用于足底测量系统的压阻式压力传感器的研制研究

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7354969

F. R. M. Rashidi, O. Hussein, W. Hasan

引用次数: 5

Impact of stress-induced heating on PLR and WLR HCI testing 应力诱导加热对PLR和WLR HCI测试的影响

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355007

N. H. Seng, Amy Voo Mei Mei

{"title":"Impact of stress-induced heating on PLR and WLR HCI testing","authors":"N. H. Seng, Amy Voo Mei Mei","doi":"10.1109/RSM.2015.7355007","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355007","url":null,"abstract":"Hot carrier (HCI) is typical reliability test in qualifying new MOSFET device specified in JEDEC JP001 [1]. The tests are normally conducted on wafer level (WLR) using a manual probe station or automatic tester with probe card. Packaged level reliability (PLR) test system is used as well to test the MOSFET device in parallel. PLR allows higher number of samples (device under test, DUT) to be tested within a much shorter time, even applying longer stress time. The electrical connection through package units, sockets, and test boards is expected more stable than probing contact between probe pads and probe needle tips. Hence, more consistent degradation among DUT-to-DUT and accurate lifetime extrapolation can be achieved. The correlation between WLR and PLR was studied for MOSFET devices with 3.3 volt operating condition and also 12V LDMOS device. The PLR showed higher HCI degradation compared to WLR for 12V LDMOS device, whereas comparable for MOSFET. This was very low level of device self-heating effect on LDMOS from characteristic curves. However, the heat dissipation from ceramic packages took time compared to large silicon wafer on probe chuck. The stress-induced heating impact on LDMOS is discussed in this paper.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"245 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91319529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Effect of acid concentration and time of sulphate process on synthesizing the titanium dioxide from synthetic rutile waste 硫酸法酸浓度和时间对合成金红石废合成二氧化钛的影响

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355016

Ahmad Mukifza, S. Yusof, Clarence M. Ongkudon, Eddy M. Farid, Huzaikha Binti Awang

引用次数: 1

A low power bandgap voltage reference for Low-Dropout Regulator 一种用于低压差稳压器的低功率带隙基准电压

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7354986

Chu-Liang Lee, R. Sidek, F. Rokhani, N. Sulaiman

引用次数: 5

Relation of parallel resistance to the passive double SAW resonator 并联电阻与无源双SAW谐振器的关系

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7354964

S. G. Ling, M. Hamidon, Z. Yunusa

引用次数: 1

Effect of Harum Manis mango as natural photosensitizer at different extracting temperature on performance of dye-sensitized solar cells (DSSCs) 芒果作为天然光敏剂在不同提取温度下对染料敏化太阳能电池性能的影响

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355011

S. Suhaimi, M. Shahimin, S. Z. Siddick, B. Razak, M. H. C. Mat

{"title":"Effect of Harum Manis mango as natural photosensitizer at different extracting temperature on performance of dye-sensitized solar cells (DSSCs)","authors":"S. Suhaimi, M. Shahimin, S. Z. Siddick, B. Razak, M. H. C. Mat","doi":"10.1109/RSM.2015.7355011","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355011","url":null,"abstract":"Dye-sensitized solar cells containing yellow curcumin of Harum Manis mango were extracted in water and ethanol solvent and fabricated at different temperatures to find the optimum condition with the best performance solar cell. Harum Manis mango was studied as an alternative sensitizer, that anchored to a nanoparticle titanium dioxide scaffold, due to its availability in native Malaysia climate. The absorption spectrum of each dye was measured using ultraviolet-visible spectroscopy. The absorption spectrum shows an absorption peak at 450nm in water and a broader absorption in the ethanol. The conversion efficiency achieved by dyes extracted in water and ethanol solvent at room temperature is about 0.03% and 0.51%. When temperature parameter is varied (room temperature, 50°C, 75°C, and 100°C), dye extracted in water solvent attains its highest efficiency of about 0.60% and 0.32% in ethanol at 50°C. In fact, 50°C extracting temperature in water solvent shows as an optimum condition for Harum Manis mango to achieve its best performance. This paper reveals detailed optimization of fabrication process at different extracting temperatures for Harum Manis mango photosensitizer based solar cells which can be used as an environmental friendly, low cost alternative system especially for further research in DSSCs technology.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"82 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74556801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Comparison of DC and pulse train analysis on submicrometer pMOSFETs lifetime prediction using on-the-fly method 直流和脉冲序列分析在亚微米pmosfet寿命预测中的比较

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7354991

I. N. Abdullah Khafit, A. F. Muhammad Alimin, S. F. Wan Muhamad Hatta, N. Soin

引用次数: 0

The effect of growth conditions to the optical quality of GaAsBi alloy 生长条件对GaAsBi合金光学质量的影响

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI: 10.1109/RSM.2015.7355020

A. Mohmad, B. Majlis, F. Bastiman, R. Richards, J. David

引用次数: 2