无结vs结SOI n-MOSFET晶体管的电子浓度行为

2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) Pub Date : 2015-08-01 DOI:10.1109/RSM.2015.7354982

A. Huda, M. K. Md Arshad, N. Othman, C. Voon, R. M. Ayub, S. Gopinath, K. L. Foo, A. R. Ruslinda, U. Hashim, H. C. Lee, P. Adelyn, S. M. Kahar

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引用次数: 1

摘要

本文研究了栅极功函数变化作为外加栅极电压的函数对100 nm栅长绝缘体上硅(SOI)无结(JLT)和结(JT)晶体管耗尽和反转时电子浓度的影响。结果表明，在大于5.0 eV的高栅极工作函数下，JLT器件功能良好，在不失去栅极可控性的情况下实现了完全耗尽，而指定的JT器件的工作范围更广，可以从低间隙、中间隙或高工作函数中选择。

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Electron concentration behavior in junctionless vs junction SOI n-MOSFET transistor

In this paper, the effect of gate workfunction variation on electron concentration at depletion and inversion as a function of applied gate voltage for 100 nm gate length silicon-on-insulator (SOI) junctionless (JLT) and junction (JT) transistors are investigated. It shows that the JLT device is properly function and achieving full-depletion without losing gate controllability at higher gate workfunction of more than 5.0 eV whereas the designated JT device is more wider range, ranging from low, mid-gap or high workfunction.

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2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)

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