Laser micromachining of Circular Transmission Line Model (CTLM) of Al contacts on n-type SiC/Si chips

N. F. Mohd Nasir, K. A. Hassan, P. Leech, G. K. Reeves, A. Holland, Y. Wahab, M. Mazalan, P. Tanner
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引用次数: 1

Abstract

An array of Circular Transmission Line Model (CTLM) metal contacts was deposited onto the upper surface of the n-SiC/Si chips using laser micromachining as an alternative to standard photolithography technique. Thin epitaxial n-type 3C-SiC/Si chips were used since no current leakage observed in previous studies. Various laser energies were used for the CTLM pattern transfer. Low values of ρc were obtained such 19×10-4 Ωcm2 was produced despite of different rings' diameters at the lower laser energy strength. However, high laser penetration had caused higher contact resistances approximately 20 times. This is probably attributed to the surface degradation of 3C-SiC.
n型SiC/Si芯片Al触点圆形传输线模型的激光微加工
采用激光微加工技术替代标准光刻技术,将圆形传输线模型(CTLM)金属触点阵列沉积在n-SiC/Si芯片的上表面。由于在以往的研究中未观察到电流泄漏,因此采用了薄外延n型3C-SiC/Si芯片。利用不同的激光能量进行CTLM图案转移。在较低的激光能量强度下,尽管环直径不同,ρc值也很低。然而,高激光穿透造成高接触电阻约20倍。这可能是由于3C-SiC的表面降解所致。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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