Transparent mask design and fabrication of interdigitated electrodes

P. Adelyn, U. Hashim, Y. Ha, M. K. Md Arshad, A. R. Ruslinda, R. M. Ayub, S. Gopinath, C. Voon, K. L. Foo
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引用次数: 3

Abstract

Fabrication of Interdigitated Electrodes (IDEs) involves several processes which include oxidation, metallization and photolithography. Among these three processes, photolithography process is the most critical part in the fabrication of IDEs. Photolithography refers to the process of pattern definition by transferring the desired design patterns from a photo-mask/chrome-mask to photoresist (thin uniform layer of viscous liquid) on the wafer surface. Thus, printed transparent masks' resolution plays an important role in photolithography process. This will affect the dimension of pattern transfer to the photoresist and hence influences the functionality of IDEs indirectly due to the low resolution of the printed mask. Consequently, the dimension of IDEs' design is compared among the design in AutoCAD tool, printed mask and fabricated device.
交叉指状电极的透明掩膜设计与制造
交叉指状电极的制备涉及氧化、金属化和光刻等工艺。在这三种工艺中,光刻工艺是制备ide的关键环节。光刻是指通过将所需的设计图案从光掩膜/铬掩膜转移到晶圆表面的光刻胶(薄而均匀的粘性液体层)来定义图案的过程。因此,印刷透明掩模的分辨率在光刻工艺中起着重要的作用。这将影响图案转移到光刻胶的尺寸,从而间接影响ide的功能,因为印刷掩模的低分辨率。在此基础上,比较了AutoCAD工具设计、印刷掩模设计和制造器件设计中ide设计的尺寸。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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