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2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)最新文献

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Afterpulse background suppression in time-correlated single photon counting lifetime experiments using optimized gate filter 优化门滤波器在时间相关单光子计数寿命实验中的后脉冲背景抑制
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925296
M. Gerber, R. Kleiman
{"title":"Afterpulse background suppression in time-correlated single photon counting lifetime experiments using optimized gate filter","authors":"M. Gerber, R. Kleiman","doi":"10.1109/PVSC.2014.6925296","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925296","url":null,"abstract":"Using a monostable multivibrator, the signal-dependent afterpulsing background from a single photon avalanche diode was suppressed. This digital filter gate was characterized and optimized using photoluminescence decay lifetime measurements to show a reduction in systematic error that is 25% of the measured lifetime and ~500X improvement in acquisition time when compared with the time taken to obtain a comparably reliable result by reduction of the repetition rate to suppress afterpulsing. At 10 MHz, there is an increase in the linear dynamic range from ~2τ to ~6τ, where the lifetime, t, was measured to be (5.0±0.1)ns. Lifetime measurements were performed with a pulsed 510 nm diode laser, a 500 nm GaAs layer (sandwiched between InGaP capping layers), a silicon single-photon avalanche photodiode and time-correlated single photon counting electronics.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"38 1","pages":"1899-1902"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72895547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Image aided dynamic reconfiguration of SPV array under non uniform illumination 非均匀光照下SPV阵列的图像辅助动态重构
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925037
B. Patnaik, U. Aswani, G. Sarkar, S. Duttagupta
{"title":"Image aided dynamic reconfiguration of SPV array under non uniform illumination","authors":"B. Patnaik, U. Aswani, G. Sarkar, S. Duttagupta","doi":"10.1109/PVSC.2014.6925037","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925037","url":null,"abstract":"In this paper, we studied Solar Photovoltaic (SPV) array output power as a function of dynamic illumination intensity pattern. A fine resolution pixel level analysis of 2D dynamic illumination intensity pattern is mapped to the module architecture. Images taken by high resolution cameras at regular intervals will help track the iso-insolation contours by mapping pixel pattern and estimate the illumination intensity state of the module. The aggregate intensity pattern on such an SPV module will be a mixed pattern classified as non-uniform illumination (NUI) states (BRIGHT, GREY, DARK). Optimization of a SPV array under such NUI conditions is a considerable challenge. We propose an image aided dynamic reconfiguration technique based on the classification of modules after pixelating the image of the array. The nature of the BRIGHT state and DARK state coverage on the SPV module has a significant implication on output power depending on the inter-connectivity of the PV cells (module architecture) and if bypass diodes are attached to individual cells or a packet of cells. The promise of this approach is to reduce disruption of the SPV array operation. Another significant point is the ability to predict the power. It has been demonstrated that a small change in the NUI pattern can cause a significant change in the power output. While certain individual hardware blocks have been developed, ongoing activity is focused on realization of a fully online implementation.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"138 1","pages":"0797-0802"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73113991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Microstructured ZnO coatings for improved performance in Cu(In,Ga)Se2 photovoltaic devices 改善Cu(in,Ga)Se2光电器件性能的微结构ZnO涂层
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6924929
J. Frantz, J. Myers, R. Bekele, J. Sanghera
{"title":"Microstructured ZnO coatings for improved performance in Cu(In,Ga)Se2 photovoltaic devices","authors":"J. Frantz, J. Myers, R. Bekele, J. Sanghera","doi":"10.1109/PVSC.2014.6924929","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6924929","url":null,"abstract":"The performance of thin film Cu(In,Ga)Se2 (CIGS) photovoltaics is typically degraded by light lost due to the high reflectivity of the transparent top contact and by recombination resulting from carrier generation far from the junction. Traditional antireflective (AR) coatings are insufficient to address the former issue, particularly at non-normal incidence. We present a novel microstructured ZnO coating that serves two functions; it acts an AR layer with superior non-normal performance in comparison to thin film AR coatings, and it scatters a significant fraction of the incoming radiation at a large angle, resulting in absorption that is on average closer to the junction. This coating, formed via a wet etch process, results in performance comparable to that of uncoated films at normal incidence and an increase of up to 25% in the short circuit current and 18% in device efficiency at non-normal incidence.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"165 1","pages":"0350-0352"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80421871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Determining the maximum open circuit voltage from absorber photoluminescence in the presence of tail states 确定在尾态存在时吸收体光致发光的最大开路电压
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925052
John K. Katahara, H. Hillhouse
{"title":"Determining the maximum open circuit voltage from absorber photoluminescence in the presence of tail states","authors":"John K. Katahara, H. Hillhouse","doi":"10.1109/PVSC.2014.6925052","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925052","url":null,"abstract":"We develop a general model for sub-bandgap absorption that includes the Urbach, Franz-Keldysh, and Thomas-Fermi models as limiting forms. Combination of this absorption scheme with a generalized Kirchhoff law for spontaneous emission of photons yields a model of photoluminescence (PL) with broad applicability to many semiconductors. This model allows for full-spectrum fitting of absolute intensity PL data and outputs: (1) the functional form of sub-bandgap absorption, (2) the energy broadening term (3) the direct bandgap, (4) the local temperature, and (5) the quasi-Fermi Level Splitting (QFLS). The accuracy of the model is demonstrated by fitting the room temperature PL spectrum of GaAs. It is then applied to Cu(In,Ga)(S,Se)2 and Cu2ZnSn(S,Se)4 to reveal the nature of their tail states. The extracted QFLS is shown to accurately predict the open-circuit voltage of devices fabricated from the materials.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"5 1","pages":"0866-0868"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82389995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-resolution residential feeder load characterization and variability modelling 高分辨率住宅馈线负荷表征和变异性建模
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925193
Andrew Pohl, Jay Johnson, S. Sena, R. Broderick, J. Quiroz
{"title":"High-resolution residential feeder load characterization and variability modelling","authors":"Andrew Pohl, Jay Johnson, S. Sena, R. Broderick, J. Quiroz","doi":"10.1109/PVSC.2014.6925193","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925193","url":null,"abstract":"Data from of a highly instrumented residential feeder in Ota City, Japan was used to determine 1 second load variability for the aggregation of 50, 100, 250, and 500 homes. The load variability is categorized by binning the data into seasons, weekdays vs. weekends, and time of day to create artificial sub-15-minute variability estimates for modeling dynamic load profiles. An autoregressive, AR(1) function along with a high pass filter was used to simulate the high resolution variability. The simulated data were validated against the original 1-second measured data.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"1471-1475"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82468453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Relating indoor and outdoor performance of bifacial modules 有关双面模块的室内外性能
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925175
B. V. Van Aken, A. Carr
{"title":"Relating indoor and outdoor performance of bifacial modules","authors":"B. V. Van Aken, A. Carr","doi":"10.1109/PVSC.2014.6925175","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925175","url":null,"abstract":"Although flash tests under standard test conditions yields lower power due to transmittance of the back sheet, bifacial modules are expected to outperform their monofacial equivalents in terms of yearly energy output in the field. Different transparent rear side materials have been compared. We compare flash tests for these bifacial modules at various incidence angles with and without a light scattering panel behind the modules. The results of an outdoor study comparing modules with transparent back sheet and modules with state-of-the-art AR coating on the front glass will be presented.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"13 1","pages":"1381-1383"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82503777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Non-toxic, colloidal ZnS-AgInS2 nanoparticles for organic-inorganic hybrid photovoltaics 用于有机-无机杂化光伏的无毒胶体ZnS-AgInS2纳米颗粒
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925211
E. Sanehira, C. Luscombe, Lih Y. Lin
{"title":"Non-toxic, colloidal ZnS-AgInS2 nanoparticles for organic-inorganic hybrid photovoltaics","authors":"E. Sanehira, C. Luscombe, Lih Y. Lin","doi":"10.1109/PVSC.2014.6925211","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925211","url":null,"abstract":"Non-toxic, colloidal ZnS-AgInS2 nanoparticles are synthesized and characterized for organic-inorganic hybrid photovoltaic applications. The optical properties of these particles are easily tuned by changing the chemical composition of the nanoparticle. Additionally, the photoluminescence quantum yield of 37.5% suggests this material is a promising candidate for optoelectronic devices. A comparison of the photoluminescence spectra of ZnS-AgInS2 nanoparticle and poly-3(hexylthiophene) blends to poly-3(hexylthiophene) neat indicates charge transfer between the nanoparticle and the polymer occurs in solution. Photovoltaic devices were fabricated using blends of ZnS-AgInS2 nanoparticles, poly-3(hexylthiophene) and [6,6]-phenyl-C61-butyric acid methyl ester, yielding an average power conversion efficiency of 2.3%.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"35 1","pages":"1547-1552"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78867896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The BOSCO cell concept: Bifacial operation with double-sided collection BOSCO细胞概念:双面操作，双面收集
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925348
F. Fertig, K. Krauss, J. Greulich, F. Clement, D. Biro, R. Preu, S. Rein
{"title":"The BOSCO cell concept: Bifacial operation with double-sided collection","authors":"F. Fertig, K. Krauss, J. Greulich, F. Clement, D. Biro, R. Preu, S. Rein","doi":"10.1109/PVSC.2014.6925348","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925348","url":null,"abstract":"The recently introduced BOSCO (“Both Sides Collecting and Contacted”) solar cell exhibits emitter regions on front and rear side, which are interconnected by diffused vias. This allows double-sided collection of carriers in the base and bifacial operation while supporting standard module interconnection technology. This work gives a simplified loss analysis of the first batch of large-area multi-crystalline silicon cells. A potential efficiency improvement of 0.9 %abs in front-side efficiency and 25 %rel in rear-side efficiency is expected when implementing imminent technological measures.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"38 1","pages":"2138-2143"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78963603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
III–V-N compounds for multi-junction solar cells on Si 硅基多结太阳能电池用III-V-N化合物
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925509
K. Yamane, N. Urakami, H. Sekiguchi, A. Wakahara
{"title":"III–V-N compounds for multi-junction solar cells on Si","authors":"K. Yamane, N. Urakami, H. Sekiguchi, A. Wakahara","doi":"10.1109/PVSC.2014.6925509","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925509","url":null,"abstract":"We proposed a GaPN/GaAsPN/Si multi-junction solar cell in which lattice constants for all layers matched to Si bottom cell. Initial growth of GaP layer on Si is an important role to suppress the anti-phase domain, stacking faults, threading dislocations and melt-back etching. According to theoretical estimation considering the strain effect, band-gap energy about 1.65 eV can be obtained by GaAs0.2P0.74N0.06 which satisfies the lattice-matching condition to Si. In order to clarify the possibility of this material system, we grew GaPN and GaAsPN on the structural defect-free GaP/Si template by using rf-MBE. We also investigated the pinning state at the GaP(N)/Si heterointerface to design a low-loss tunneling junction.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"71 1","pages":"2792-2796"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78963849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Progress toward developing a novel module architecture for increased reliability and reduced costs 为提高可靠性和降低成本而开发新型模块体系结构的进展
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925483
K. Barth, Davis Hemenway
{"title":"Progress toward developing a novel module architecture for increased reliability and reduced costs","authors":"K. Barth, Davis Hemenway","doi":"10.1109/PVSC.2014.6925483","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925483","url":null,"abstract":"Module reliability has a direct impact on the levalized cost of energy, and reliability issues for thin film PV have been consistently reported. Direct Solar LLC is developing a new module architecture for thin film PV that has robustness to moisture and excellent adhesion under UV light exposure. Process cycle times for each manufacturing step is under 1 minute using low capital cost, small footprint tooling. The patent pending architecture utilizes a specialized two part edge seal. The modules are fabricated without lamination, vacuum pressing or module heating. An initial version of this design has passed IEC 61646 and UL 1703 certification tests and 4500+hrs. of the rigorous 85 C/85% relative humidity “damp heat test”.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"0166-0169"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78990781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
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