2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)最新文献_第10页

Study of Al/a-SiC/c-Si(p)/Al structure prepared by PECVD PECVD制备Al/a-SiC/c-Si(p)/Al结构的研究

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925291

M. Váry, J. Huran, M. Perný, M. Mikolasek, V. Šály, J. Packa, A. Kobzev

引用次数: 0

Elucidating and engineering recombination-active metal-rich precipitates in n-type multicrystalline silicon n型多晶硅中富金属活性析出物的解析与工程重组

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925564

A. Morishige, D. Fenning, J. Hofstetter, M. Ann Jensen, S. Ramanathan, Chenlei Wang, B. Lai, T. Buonassisi

{"title":"Elucidating and engineering recombination-active metal-rich precipitates in n-type multicrystalline silicon","authors":"A. Morishige, D. Fenning, J. Hofstetter, M. Ann Jensen, S. Ramanathan, Chenlei Wang, B. Lai, T. Buonassisi","doi":"10.1109/PVSC.2014.6925564","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925564","url":null,"abstract":"Solar cells based on n-type upgraded metallurgical grade multicrystalline silicon (mc-Si) substrates may be a promising path for reducing the cost per watt of photovoltaics. The detrimental effect of metal point defects in both n- and p-type silicon is known, but the recombination activity of metal-silicide precipitates, especially in n-type mc-Si, is still not well established, impeding modeling and process optimization efforts. In this contribution, we provide a rationale for why metal-rich precipitates may limit minority-carrier lifetime in n-type mc-Si, in contrast to as-grown p-type mc-Si, which is dominated by metal point defects. Using μ-XRF, we identify metal-rich precipitates along a recombination active grain boundary in the low-lifetime “red zone” region of n-type wafers from a corner brick. To reduce the concentration of precipitated metals, we phosphorus-diffuse the wafers. Grain boundaries remain recombination active, which may be attributed to incomplete gettering of point defects and dissolution of recombination-active metal-rich precipitates.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"17 1","pages":"3004-3007"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74337134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Double Shottcky of NiOx/graphene/Si for enhance efficiency solar cells 氧化镍/石墨烯/硅复合材料提高太阳能电池效率

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925563

M. Mohammed, A. Al-Hilo, Tar-Pin Chen

引用次数: 0

Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management 利用二氧化硅纳米球光刻技术制备纳米硅以增强光管理

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925363

Jea-Young Choi, C. Honsberg

{"title":"Silicon nano-fabrication by using silica nanosphere lithography technique for enhanced light management","authors":"Jea-Young Choi, C. Honsberg","doi":"10.1109/PVSC.2014.6925363","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925363","url":null,"abstract":"We present a complete silicon (Si) nano-fabrication process to provide controlled shapes of nanostructures over large-scale Si surface area by combining our novel solvent controlled silica nanosphere (SNS) spin-coating method with reactive ion etching. Our novel spin-coating method shows that the introduction of N,N-dimethyl-formamide solvent for SNS spin-coating can greatly enhance the uniformity of spin-coated 2-dimensional SNS layer and its coverage with significantly less sensitivity to deposition area. The enhanced quality and coverage of SNS provided excellent nano-patterning for diverse etching applications. With our SNS lithography, reactive ion etching (RIE) has been applied with fluorine (F) and chlorine (Cl) based gases to provide (1) controlled etching selectivity between SNS (SiO2) and Si substrate and (2) desired etching orientation depending on target shape of structure. Here we focus on the fabrication of Si nanopillar structures with various top diameters but fixed height which show significantly improved anti-reflection effect. In addition, computational optical modeling with rigorous coupled wave analysis (RCWA) shows that well-tapered nanocone structures can provide greatly reduced incident light angle dependence for surface reflection.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"1 1","pages":"2206-2208"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72819210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Evaluation of passivation layers via temperature-dependent lifetime measurements 通过温度相关寿命测量评估钝化层

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925131

S. Bernardini, Adrienne L. Blum, M. Bertoni

引用次数: 2

Scanning electron microscopy analysis of defect clusters in multicrystalline solar grade silicon solar cells 多晶太阳级硅太阳电池缺陷团簇的扫描电镜分析

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925549

C. Berthod, J. Odden, T. O. Saetre

引用次数: 0

Development of high efficiency wafer bonded 4-junction solar cells for concentrator photovoltaic applications 聚光光伏用高效晶圆键合四结太阳能电池的研制

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6924947

F. Dimroth, T. Tibbits, Paul Beutel, C. Karcher, E. Oliva, G. Siefer, M. Schachtner, A. Wekkeli, M. Steiner, M. Wiesenfarth, A. Bett, R. Krause, E. Gerster, M. Piccin, N. Blanc, M. Rico, C. Drazek, E. Guiot, J. Wasselin, C. Arena, T. Salvetat, A. Tauzin, T. Signamarcheix, T. Hannappel

{"title":"Development of high efficiency wafer bonded 4-junction solar cells for concentrator photovoltaic applications","authors":"F. Dimroth, T. Tibbits, Paul Beutel, C. Karcher, E. Oliva, G. Siefer, M. Schachtner, A. Wekkeli, M. Steiner, M. Wiesenfarth, A. Bett, R. Krause, E. Gerster, M. Piccin, N. Blanc, M. Rico, C. Drazek, E. Guiot, J. Wasselin, C. Arena, T. Salvetat, A. Tauzin, T. Signamarcheix, T. Hannappel","doi":"10.1109/PVSC.2014.6924947","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6924947","url":null,"abstract":"The next generation of multi-junction concentrator solar cells will have to reach higher efficiencies than today's devices. At the same time these solar cells must be reliable in the field, be manufacturable with good yield and at sufficiently low cost. Inevitably the request of higher efficiency requires four or even more junction devices. A four-junction solar cell combination of GaInP/GaAs//GaInAsP/GaInAs with bandgap energies of 1.9, 1.4, 1.1, 0.7 eV is developed in a close collaboration between the Fraunhofer ISE, Soitec, CEA-LETI and HZB. This 4-junction cell hits close to the optimum of theoretical efficiency contour plots and has the potential to reach efficiencies up to 50 % under concentration. Challenges are associated with lattice-mismatch between GaAs and InP which is overcome by direct wafer-bonding. The high cost of the InP is addressed by the use of engineered substrates which only require a 500 nm thin mono-crystalline InP layer instead of several hundred μm. Excellent solar cell results up to 44.7 % efficiency have been obtained under concentration for devices manufactured on InP bulk substrates. The high cell efficiency is also supported by out-door characterization of one cell below a Fresnel lens with 16 cm2 aperture area. 38.5 % conversion efficiency has been measured for this mono-module in Freiburg under real operating conditions without any corrections.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"12 1","pages":"0006-0010"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73683458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 25

A combinatorial approach to the optimisation of Cd(1−x)ZnxS layers for CdTe solar cells CdTe太阳能电池中Cd(1−x)ZnxS层优化的组合方法

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925253

Robert E. Treharne, A. Clayton, L. Phillips, J. Major, S. Irvine, K. Durose

引用次数: 0

Nanoscale engineering of solution-processed CdTe solar cells using nanocrystalline precursors 采用纳米晶前驱体的溶液处理碲化镉太阳能电池的纳米工程

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925672

Ryan W. Crisp, Matthew G. Panthani, J. Berry, W. Rance, J. Duenow, D. Talapin, J. Luther

引用次数: 2

1.6 suns at 58°20′N - the solar resource in Southern Norway 北纬58°20°的1.6个太阳——挪威南部的太阳能资源

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925040

G. Yordanov, T. O. Saetre, O. Midtgård

引用次数: 3