2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)最新文献_第4页

Modeling nonuniform irradiance and chromatic aberration effects in a four junction solar cell using SPICE 用SPICE模拟四结太阳能电池的非均匀辐照度和色差效应

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925639

Pratibha Sharma, M. Wilkins, H. Schriemer, K. Hinzer

引用次数: 13

High-performance hetero-junction crystalline silicon photovoltaic technology 高性能异质结晶体硅光伏技术

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925134

J. Levrat, C. Allébe, N. Badel, L. Barraud, M. Bonnet-eymard, J. Champliaud, F. Debrot, A. Descoeudres, A. Faes, A. Lachowicz, S. Nicolay, L. Sansonnens, C. Ballif, J. Geissbühler, S. D. Wolf, M. Despeisse

{"title":"High-performance hetero-junction crystalline silicon photovoltaic technology","authors":"J. Levrat, C. Allébe, N. Badel, L. Barraud, M. Bonnet-eymard, J. Champliaud, F. Debrot, A. Descoeudres, A. Faes, A. Lachowicz, S. Nicolay, L. Sansonnens, C. Ballif, J. Geissbühler, S. D. Wolf, M. Despeisse","doi":"10.1109/PVSC.2014.6925134","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925134","url":null,"abstract":"Silicon heterojunction solar cell technology (HJT) takes advantage of ultra-thin amorphous silicon layers deposited on both sides of monocrystalline silicon wafers, enabling excellent silicon wafer surface passivation resulting in high device power output and in addition to efficient use of thin wafers. A full cell processing platform was developed in our laboratory, enabling to achieve > 22 % cell efficiency. Advanced concepts for metallization and interconnection are under study, from fine-line printing combined with SmartWire interconnection to Copper plating. Importantly, we show that the HJT technology intrinsically enables high bifaciality of the cells (> 95 %), and further demonstrates a low thermal coefficient (<; 0.2 - 0.3 %/°C). The high performance of heterojunction cells and SmartWire interconnection based modules allow for very low cost of electricity for Heterojunction based solar systems, with a potential below 6 Euro cents per kWh in Europe, bringing photovoltaics as a very competitive electricity source. It further provides upgrade potential towards 24 % cell efficiency.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"62 1","pages":"1218-1222"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84928815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 7

The application of a magnetic field to improve polymer: Fullerence solar cell performance 应用磁场改善聚合物:太阳能电池的充盈性能

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925259

F. Hsu, Chiang-Ting Chen, Cheng-Hung Li, C. Chen, Y. Chen

引用次数: 1

Minority carrier lifetimes in 1.0-eV p-In0.27Ga0.73As layers grown on GaAs substrates 在GaAs衬底上生长的1.0 ev p-In0.27Ga0.73As层的少数载流子寿命

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925664

R. Tatavarti, K. Ban, A. Wibowo, D. Kuciauskas, H. Guthrey, K. Jones, S. Johnston, A. Norman, D. Levi, M. Al‐Jassim

{"title":"Minority carrier lifetimes in 1.0-eV p-In0.27Ga0.73As layers grown on GaAs substrates","authors":"R. Tatavarti, K. Ban, A. Wibowo, D. Kuciauskas, H. Guthrey, K. Jones, S. Johnston, A. Norman, D. Levi, M. Al‐Jassim","doi":"10.1109/PVSC.2014.6925664","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925664","url":null,"abstract":"Time-resolved photoluminescence (TRPL) measurements indicated minority carrier lifetimes of 15 ns for electrons in 2-μm thick layers of 1.0-eV p-In0.27Ga0.73As grown on 6-inch GaAs wafers. Electron lifetimes increased from 10 ns to 15 ns as the thickness of 1.0-eV p-In0.27Ga0.73As was increased from 0.5 μm to 2 μm. The electron lifetimes decreased from 15 ns for a p-InxGa1-xAs with a doping density of 1×1017 cm-3 to 5 ns for a doping density of 5×1017 cmq̑3. Cathodoluminescence imaging measurements indicated dislocation densities of 7.9×105 cm-2 for a 1.0-μm thick layer of p-In0.27Ga0.73As (1.0eV) at the center of the wafer and 1.4×106 cm-2 towards the edge. Cross-section transmission electron microscopy studies were performed to study dislocation blocking and threading dislocation propagation through the metamorphic graded AllnGaAs layers.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"51 1","pages":"3414-3416"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85665528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of GaAs solar cells at High MOCVD growth rates 高MOCVD生长速率下GaAs太阳能电池的分析

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925345

K. Schmieder, M. Yakes, C. Bailey, Z. Pulwin, M. Lumb, L. Hirst, M. González, S. Hubbard, C. Ebert, R. Walters

引用次数: 13

Hierarchical modeling of electron and hole transport in nanoparticle thin films: From ab initio to Monte Carlo 纳米粒子薄膜中电子和空穴输运的分层建模:从从头算到蒙特卡罗

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925113

G. Zimányi, M. Voros, I. Carbone, S. Carter

{"title":"Hierarchical modeling of electron and hole transport in nanoparticle thin films: From ab initio to Monte Carlo","authors":"G. Zimányi, M. Voros, I. Carbone, S. Carter","doi":"10.1109/PVSC.2014.6925113","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6925113","url":null,"abstract":"Nanoparticle solar cells show the promise of enhancing the efficiency of solar cells over the Shockley-Queisser limit due to the quantum-confinement-enhanced charge multiplication process. A fundamental challenge of nanoparticle solar cells, however, is that the same quantum confinement that enhances charge multiplication also tends to localize the carriers and thus hinders charge transport. To create a roadmap for overcoming this challenge, we developed a multi-scale transport modeling scheme that starts with ab initio modeling of individual nanoparticles, continues with extracting a few summary parameters that best characterize the physics of these nanoparticles, such as charging energies and size dependent energy levels, and finally feeds this information into a kinetic Monte Carlo hopping transport framework to simulate electron and hole transport across realistically modeled nanoparticle films and devices. We demonstrate the power of this hierarchical modeling by exploring the carrier mobilities of PbSe nanoparticle films as a function of composition, disorder and temperature, where comparison of our results with experiments is possible.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"49 1","pages":"1124-1126"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85745045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Arc fault risk assessment and degradation model development for photovoltaic connectors 光伏连接器电弧故障风险评估及退化模型开发

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6924875

B. Yang, Kenneth Armijo, R. K. Harrison, Kara E. Thomas, Jay Johnson, Jason M. Taylor, N. R. Sorensen

引用次数: 4

Thin film Iron Pyrite synthesized by sulfurization of Iron Oxide for application in photovoltaics 氧化铁硫化法制备薄膜硫铁矿在光伏中的应用

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6925411

Pravakar P. Rajbhandari, T. Dhakal, C. Westgate

引用次数: 0

Study of the passivation mechanism of c-Si by Al2O3 using in situ infrared spectroscopy 用原位红外光谱研究Al2O3钝化c-Si的机理

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6924988

Rohan P. Chaukulkar, W. Nemeth, A. Dameron, P. Stradins, S. Agarwal

{"title":"Study of the passivation mechanism of c-Si by Al2O3 using in situ infrared spectroscopy","authors":"Rohan P. Chaukulkar, W. Nemeth, A. Dameron, P. Stradins, S. Agarwal","doi":"10.1109/PVSC.2014.6924988","DOIUrl":"https://doi.org/10.1109/PVSC.2014.6924988","url":null,"abstract":"We present an in situ attenuated total reflection Fourier transform infrared (ATR-FTIR) spectroscopy study of the passivation mechanism in the surface passivation of Si solar cells by Al2O3 thin films deposited via atomic layer deposition (ALD) using TMA and O3 as precursors. The IR measurements suggest that during the annealing stage, the Si-H bonding near the interface decreases. We have used D-terminated c-Si internal-reflection crystals to differentiate the residual H atoms that may migrate from ALD Al2O3 films versus the residual D atoms present at the Al2O3/c-Si interface after ALD. Within the sensitivity of the ATR-FTIR spectroscopy setup of ~1012 cm-2 for Si-H bonds, we do not detect any migration of H from Al2O3 to the c-Si interface. Therefore, we conclude that the migration of O, and the subsequent restructuring of the interface during the annealing step, primarily contributes toward the chemical passivation of the Al2O3/c-Si interface.","PeriodicalId":6649,"journal":{"name":"2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)","volume":"126 1","pages":"0582-0585"},"PeriodicalIF":0.0,"publicationDate":"2014-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85399556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Defect creation in low lattice-mismatched epitaxial structures 低晶格错配外延结构的缺陷产生

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Pub Date : 2014-06-08 DOI: 10.1109/PVSC.2014.6924969

A. Maros, N. Faleev, C. Honsberg

引用次数: 1