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2018 4th IEEE International Conference on Emerging Electronics (ICEE)最新文献

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Increasing the efficiency of a fixed-wavelength cascaded Raman resonator for a non-resonant pump by using a reflector 利用反射器提高非谐振泵浦的固定波长级联拉曼谐振腔的效率
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8938007
Roopa Prakash, V. Balaswamy, Vishal Choudhury, V. Supradeepa
{"title":"Increasing the efficiency of a fixed-wavelength cascaded Raman resonator for a non-resonant pump by using a reflector","authors":"Roopa Prakash, V. Balaswamy, Vishal Choudhury, V. Supradeepa","doi":"10.1109/icee44586.2018.8938007","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938007","url":null,"abstract":"A narrow-band, fixed-wavelength cascaded Raman resonator can be effectively used only for a given input wavelength. The efficiency of wavelength conversion of a cascaded Raman resonator decreases sharply when a non-resonant pump is used. Designing and fabricating new grating sets for the resonator for different pump sources isn’t a feasible option as it compromises the simplicity and cost-effectiveness of this approach. We identified that by seeding the cascaded Raman conversion suitably, a substantial improvement in efficiency can be achieved. This is demonstrated using a coupler-based broadband reflector to significantly improve the performance of CRR for a non-resonant pump source. Remarkable improvement in efficiency is obtained with $sim 70$% of the output power at 1480nm Stokes wavelength when the CRR is pumped by a 16W Ytterbium doped fiber laser at 1057nm.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"48 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77346311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of Annealing on Resistive Switching Behavior of PMMA Based RRAM 退火对PMMA基RRAM阻性开关性能的影响
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937901
Ishan Varun, Deepak Bharti, A. Mahato, Vivek Raghuwanshi, S. P. Tiwari
{"title":"Effect of Annealing on Resistive Switching Behavior of PMMA Based RRAM","authors":"Ishan Varun, Deepak Bharti, A. Mahato, Vivek Raghuwanshi, S. P. Tiwari","doi":"10.1109/icee44586.2018.8937901","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937901","url":null,"abstract":"A PMMA based Ag/PMMA/Ti/Glass RRAM devices are reported for their resistive switching behavior. Switching performance was tested on three samples fabricated at different PMMA annealing temperatures. The switching voltages have shown a down trend with increasing annealing temperature. The Current on/off ratio and retention time also degrades with annealing temperature. The devices exhibited significantly low switching voltages (<1 V) and retention time upto 103 s. Annealing of PMMA at higher temperatures may result in softening of films resulting in lower switching voltages due to defects generation and easy charge migration. The conduction mechanism has been investigated by double log plot of I-V characteristics of device suggesting ohmic conduction at lower voltages in in HRS and in LRS. At higher voltages in HRS, space charge limited conduction dominates the conduction mechanism.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"99 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80994268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Long term aging studies of Graphene/Surlyn encapsulated organic photovoltaic devices 石墨烯/Surlyn封装有机光伏器件的长期老化研究
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937902
V. Adiga, A. D. Rao, Shishir V. Kumar, S. Raghavan, Praveen C Ramamurthy
{"title":"Long term aging studies of Graphene/Surlyn encapsulated organic photovoltaic devices","authors":"V. Adiga, A. D. Rao, Shishir V. Kumar, S. Raghavan, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937902","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937902","url":null,"abstract":"Flexible and transparent moisture barrier films have been climacteric importance for the further development of the polymer solar cells (PSCs). Herein, a monolayer graphene (2D atomic crystal) embedded in a flexible polymer (GEPs) was used to encapsulate the solar cells. The improvement of long-term stability of PSCs still needs to be overcome for their commercialization to be feasible.Degradation mechanisms studied in ITO/ZnO/PTB7:PC70 BM/MoO3/Ag inverted PSCs by Capacitance-voltage, Capacitance-frequency and light intensity dependent measurements is reported here. Measurements was performed on encapsulated and nonencapsulated (controlled and ambient environment) cells under AM1.5 illumination. However, the degradation studies performed with the ISOS D1 protocol suggested the increased lifetimes of the PSCs encapsulated with GEPs barrier films. A promising lifetime of more than 20000 hours was demonstrated with less than 22 % degradation for encapsulated devices.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"45 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87897725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of platinum thin film as a bottom electrode for aluminum nitride thin films using Plackett-Burman statistical approach 利用Plackett-Burman统计方法优化铂薄膜作为氮化铝薄膜底电极
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937951
Shubham Jadhav, Babu R. Singh, S. Chandorkar, R. Pratap
{"title":"Optimization of platinum thin film as a bottom electrode for aluminum nitride thin films using Plackett-Burman statistical approach","authors":"Shubham Jadhav, Babu R. Singh, S. Chandorkar, R. Pratap","doi":"10.1109/icee44586.2018.8937951","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937951","url":null,"abstract":"In this work, Plackett-Burman design is used to optimize platinum thin film sputtering parameters. The effect of different deposition parameters on Pt (111) rocking curve FWHM, residual stress and roughness of Pt film was studied. These substrate parameters are known to influence the quality of AlN deposited on it. It was concluded that most critical parameters deciding platinum film quality are power, annealing temperature, and deposition pressure. By identifying the most critical parameters, we narrowed our subsequent two-level factorial optimization domain by a factor of 16. Furthermore, based on the Plackett-Burman screening, the optimal values of non-critical process parameters can be set by a judicious choice that would yield best results for one of the features of film quality without adversely affecting the other features.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"12 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90950606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interlayer Engineering in GeSn Gate Stacks for Advanced CMOS 先进CMOS中GeSn栅极堆栈的层间工程
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937978
S. Kothari, J. Rathore, Krista R. Khiangte, S. Mahapatra, S. Lodha
{"title":"Interlayer Engineering in GeSn Gate Stacks for Advanced CMOS","authors":"S. Kothari, J. Rathore, Krista R. Khiangte, S. Mahapatra, S. Lodha","doi":"10.1109/icee44586.2018.8937978","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937978","url":null,"abstract":"This work reports a comparative study of different interlayers (ILs) in low thermal budget gate stacks on GeSn substrates with 8.5% and 11% of Sn concentration. It is shown through electrical capacitance-voltage $(C-V)$ and xray photoelectron spectroscopy (XPS) characterization that aluminum-based ILs help in reducing the density of interface traps $(mathrm{D}_{it})$ by suppressing Sn-O formation during HfO2 high k dielectric deposition. Pre-oxidation before IL deposition was found to be essential to reduce the C–V stretch-out indicating reduction in $mathrm{D}_{it}$. XPS data also suggests that AlN is likely to perform better than Al2O3 as an IL for further reduction of $mathrm{D}_{it}$ at the GeSn gate stack interface.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90964168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of Large Area Flexible Dielectric Metasurafces 大面积柔性介电超表面的制备
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937973
Haobijam Johnson Singh, Ambarish Ghosh
{"title":"Fabrication of Large Area Flexible Dielectric Metasurafces","authors":"Haobijam Johnson Singh, Ambarish Ghosh","doi":"10.1109/icee44586.2018.8937973","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937973","url":null,"abstract":"We report a novel way of fabricating a large area dielectric metasurface on a flexible substrate using template stripped technique. The dielectric metasurface which consisted of high index Si nanoparticle arrays, exhibits strong narrow optical resonances in near IR (~ 830 nm) with a Q-factor as large as 100. The dielectric material platform is low loss and CMOS compatible which together could be promising for applications in the field of integrated flexible opto-electronics and adaptive photonic systems.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"97 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85940397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Alternative transparent conducting electrode for flexible optoelectronics 柔性光电子器件的替代透明导电电极
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937867
Kumar Mp, Praveen C Ramamnurthy
{"title":"Alternative transparent conducting electrode for flexible optoelectronics","authors":"Kumar Mp, Praveen C Ramamnurthy","doi":"10.1109/icee44586.2018.8937867","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937867","url":null,"abstract":"Transparent conducting electrode for the organic optoelectronic devices are gathering a tremendous amount of interest. Most of the conducting electrodes like Indium Tin Oxide (ITO) are fabricated at high temperature. In recent years, flexible transparent electrodes fabricated with silver nanowires (AgNWs) extensively studied. This is a promising alternative to ITO film in an optoelectronic application. ITO may present good conductivity and transparency for the optoelectronic device but, due to its mechanical non-robust nature, it is hard to fabricate, process and use on flexible substrates like poly (ethylene terephthalate) (PET) and epoxy. These solution process methods are also important due to ease of process and large area coating without losing its electronic property. In this work alternative conducting electrodes are prepared by solution process and effect of the silver nanowire on sheet resistance has been studied. Optical and mechanical properties correlated to electronic properties are also evaluated.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"34 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81775539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photothermal effects in mobile nanotweezers 移动纳米镊子中的光热效应
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8938001
Souvik Ghosh, Ambarish Ghosh
{"title":"Photothermal effects in mobile nanotweezers","authors":"Souvik Ghosh, Ambarish Ghosh","doi":"10.1109/icee44586.2018.8938001","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938001","url":null,"abstract":"Magnetically driven mobile plasmonic nanotweezers [1] are potential candidates for various device applications pertaining to optical manipulation which are otherwise difficult to achieve using existing techniques. When illuminated, plasmonic nanoantennas generate enhanced localized electric field which imparts mechanical gradient force to trap sub-wavelength sized objects. In addition to the trapping force, there are also other effects present in a plasmonic system due to efficient absorption of electromagnetic energy. In this paper, we have theoretically investigated intrinsic plasmonic heating and resulting fluid convection for mobile nanotweezers. The temperature rise and fluid flow are calculated as a function of incident light intensity and position of the nanotweezer inside the chamber where we have assumed the geometries and experimental conditions given in reference [1]. In addition, we have investigated the possible role of fluid confinement in convective flows generated by the nanotweezer. The detailed thermal and hydrodynamic study brings an insight to different parameters that can influence the trapping performance of mobile nanotweezers and their applicability for practical purposes.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"101 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80823664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric 以高压氧化铝为栅介质的氮化镓基mis - hemt界面陷阱的研究
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937856
Bhuvnesh Kushwah, S. Kanaga, Gourab Dutta, N. Dasgupta, A. DasGupta
{"title":"Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric","authors":"Bhuvnesh Kushwah, S. Kanaga, Gourab Dutta, N. Dasgupta, A. DasGupta","doi":"10.1109/icee44586.2018.8937856","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937856","url":null,"abstract":"In this paper, we have reported high pressure oxidized thin aluminium layer as a gate dielectric for GaN-based MIS-HEMTs and studied the interface traps at Al2O3/III-Nitride interface using the capacitance-conductance method. Effect of oxygen plasma treatment prior to aluminium layer deposition has also been investigated. Significant reduction in gate leakage current has been observed in all fabricated MIS-HEMTs compared to reference HEMT in both reverse and forward bias conditions. Forward bias swing is also larger for MIS-HEMTs. Significant reduction in interface trap density was found for MIS-HEMTs with oxygen plasma treatment.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77726310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of FET Biosensor for Detection of Glutathione 谷胱甘肽检测FET生物传感器的研制
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937892
U. Barman, N. Goswami, S. Ghosh, R. Paily
{"title":"Fabrication of FET Biosensor for Detection of Glutathione","authors":"U. Barman, N. Goswami, S. Ghosh, R. Paily","doi":"10.1109/icee44586.2018.8937892","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937892","url":null,"abstract":"This work describes fabrication and characterization of Field Effect Transistor (FET) biosensor incorporated with ZnO nanoparticle - Glutathione-S-Transferase (GST) protein conjugate based channel layer for detection of glutathione. Glutathione has been reported to be an important biomarker for certain types of cancer. Nanocomposite of ZnO nanoparticles and GST was synthesized to be used as the channel material for the FET structure fabricated using standard UV lithography technique. The channel material specifically detects the conjugation reaction between glutathione and 1-chloro-2,4-dinitrobenzene (CDNB) which takes place only in presence of GST. As GST in immobilized on the channel itself, presence of glutathione can be detected by dint of occurrence of the conjugation reaction. This device was also tested with cancer cells for detection of enhanced levels of glutathione in them. Presence of glutathione is reflected on the transfer characteristics of the device. Detection was performed at various concentrations of GSH and a sensitivity and LOD (Limit of Detection) of 60.22 $mu$ A/dec change in concentration and 13.1 nM were obtained respectively. Subsequently, the device was tested with HeLa and MCF 7 cancer cells and the results were compared with that of Human Embryonic Kidney (HEK) cells, which are noncancerous. Device characteristics marked presence of higher concentration of GSH on cancer cells compared to that of normal cells. The values of sensitivity and LOD for this experiment were found to be 206.7 nA/cell and 38 cells respectively.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"73 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86831825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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