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Charge Based Compact Modeling of Gate Leakage Mechanism in AlGaN/GaN HEMTs 基于电荷的AlGaN/GaN hemt栅漏机理紧凑建模
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937997
A. Debnath, Sreenidhi Turuvekre, N. Dasgupta, A. DasGupta
{"title":"Charge Based Compact Modeling of Gate Leakage Mechanism in AlGaN/GaN HEMTs","authors":"A. Debnath, Sreenidhi Turuvekre, N. Dasgupta, A. DasGupta","doi":"10.1109/icee44586.2018.8937997","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937997","url":null,"abstract":"The gate leakage mechanism in AlGaN/GaN high electron mobility transistors (HEMT) is studied analytically using a charge-based model over a wide range of bias and temperature. Three distinct current mechanisms, Poole-Frenkel (PF), Defect assisted tunneling (DAT) and Thermionic emission (TE) are modeled. PF is the significant mechanism in reverse bias, while TE and DAT are the two dominant mechanisms in forward and low reverse bias respectively. This model is implemented in Verilog-A and rigorously validated with experimental data.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"175 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75936046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric 以高压氧化铝为栅介质的氮化镓基mis - hemt界面陷阱的研究
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937856
Bhuvnesh Kushwah, S. Kanaga, Gourab Dutta, N. Dasgupta, A. DasGupta
{"title":"Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric","authors":"Bhuvnesh Kushwah, S. Kanaga, Gourab Dutta, N. Dasgupta, A. DasGupta","doi":"10.1109/icee44586.2018.8937856","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937856","url":null,"abstract":"In this paper, we have reported high pressure oxidized thin aluminium layer as a gate dielectric for GaN-based MIS-HEMTs and studied the interface traps at Al2O3/III-Nitride interface using the capacitance-conductance method. Effect of oxygen plasma treatment prior to aluminium layer deposition has also been investigated. Significant reduction in gate leakage current has been observed in all fabricated MIS-HEMTs compared to reference HEMT in both reverse and forward bias conditions. Forward bias swing is also larger for MIS-HEMTs. Significant reduction in interface trap density was found for MIS-HEMTs with oxygen plasma treatment.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77726310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of FET Biosensor for Detection of Glutathione 谷胱甘肽检测FET生物传感器的研制
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937892
U. Barman, N. Goswami, S. Ghosh, R. Paily
{"title":"Fabrication of FET Biosensor for Detection of Glutathione","authors":"U. Barman, N. Goswami, S. Ghosh, R. Paily","doi":"10.1109/icee44586.2018.8937892","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937892","url":null,"abstract":"This work describes fabrication and characterization of Field Effect Transistor (FET) biosensor incorporated with ZnO nanoparticle - Glutathione-S-Transferase (GST) protein conjugate based channel layer for detection of glutathione. Glutathione has been reported to be an important biomarker for certain types of cancer. Nanocomposite of ZnO nanoparticles and GST was synthesized to be used as the channel material for the FET structure fabricated using standard UV lithography technique. The channel material specifically detects the conjugation reaction between glutathione and 1-chloro-2,4-dinitrobenzene (CDNB) which takes place only in presence of GST. As GST in immobilized on the channel itself, presence of glutathione can be detected by dint of occurrence of the conjugation reaction. This device was also tested with cancer cells for detection of enhanced levels of glutathione in them. Presence of glutathione is reflected on the transfer characteristics of the device. Detection was performed at various concentrations of GSH and a sensitivity and LOD (Limit of Detection) of 60.22 $mu$ A/dec change in concentration and 13.1 nM were obtained respectively. Subsequently, the device was tested with HeLa and MCF 7 cancer cells and the results were compared with that of Human Embryonic Kidney (HEK) cells, which are noncancerous. Device characteristics marked presence of higher concentration of GSH on cancer cells compared to that of normal cells. The values of sensitivity and LOD for this experiment were found to be 206.7 nA/cell and 38 cells respectively.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"73 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86831825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Photothermal effects in mobile nanotweezers 移动纳米镊子中的光热效应
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8938001
Souvik Ghosh, Ambarish Ghosh
{"title":"Photothermal effects in mobile nanotweezers","authors":"Souvik Ghosh, Ambarish Ghosh","doi":"10.1109/icee44586.2018.8938001","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938001","url":null,"abstract":"Magnetically driven mobile plasmonic nanotweezers [1] are potential candidates for various device applications pertaining to optical manipulation which are otherwise difficult to achieve using existing techniques. When illuminated, plasmonic nanoantennas generate enhanced localized electric field which imparts mechanical gradient force to trap sub-wavelength sized objects. In addition to the trapping force, there are also other effects present in a plasmonic system due to efficient absorption of electromagnetic energy. In this paper, we have theoretically investigated intrinsic plasmonic heating and resulting fluid convection for mobile nanotweezers. The temperature rise and fluid flow are calculated as a function of incident light intensity and position of the nanotweezer inside the chamber where we have assumed the geometries and experimental conditions given in reference [1]. In addition, we have investigated the possible role of fluid confinement in convective flows generated by the nanotweezer. The detailed thermal and hydrodynamic study brings an insight to different parameters that can influence the trapping performance of mobile nanotweezers and their applicability for practical purposes.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"101 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80823664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Retention Enhancement through Architecture Optimization in Junctionless Capacitorless DRAM 无结无电容DRAM的架构优化提高保留率
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937914
Md. Hasan Raza Ansari, A. Kranti
{"title":"Retention Enhancement through Architecture Optimization in Junctionless Capacitorless DRAM","authors":"Md. Hasan Raza Ansari, A. Kranti","doi":"10.1109/icee44586.2018.8937914","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937914","url":null,"abstract":"The work shows the significance of device architecture to enhance the Retention Time (RT) of Junctionless Capacitorless Dynamic Random Access Memory (1T-DRAM). The conduction and storage regions of the DRAM are segregated through an oxide. The top (n-type) region is utilized for conduction while back region (p-type) for charge storage. A potential well, required to store charges, is also achieved through a Metal-Oxide-Semiconductor (MOS) effect. A maximum RT of $sim 3.8mathrm{s}$ is achieved with gate length of 200 nm and is scaled down to 10 nm with RT of $sim 1$ ms at $85^{circ}mathrm{C}$. The significance of scaling down total length and thickness is examined. It is possible to scale the bias required to perform Write “1” operation (generation of holes) through Band-to-Band-Tunneling (BTBT) to 0.5 V for gate length of 25 nm with RT of $sim 220$ ms at $85^{circ}mathrm{C}$.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"78 10 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89543072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Memory and Logic soft error improvement using phase transition material assisted transistors 利用相变材料辅助晶体管改善存储器和逻辑软误差
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937957
S. T. Nibhanupudi, A. Rai, A. Roy, Sanjay K.Banerjee, J. Kulkarni
{"title":"Memory and Logic soft error improvement using phase transition material assisted transistors","authors":"S. T. Nibhanupudi, A. Rai, A. Roy, Sanjay K.Banerjee, J. Kulkarni","doi":"10.1109/icee44586.2018.8937957","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937957","url":null,"abstract":"Phase transition Material (PTM) assisted logic and SRAM bitcells have been proposed with improved soft error tolerance. The large insulating resistance of PTM hinders the propagation of glitches to subsequent stages thereby improving the immunity to radiation strikes. Also, the abrupt switching to metallic phase minimizes the delay penalty thereby offering an optimized solution. We present a detailed PTM parameter optimization for optimum soft error performance. We also quantify the improvement in the Soft Error Tolerance of logic and 6T SRAM bit cell configuration.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"52 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73770421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis of Cu2 ZnSnSn4 nanoparticles for solar cell applications 用于太阳能电池的Cu2 ZnSnSn4纳米颗粒的合成
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937933
K. Deepa, Praveen C Ramamurthy
{"title":"Synthesis of Cu2 ZnSnSn4 nanoparticles for solar cell applications","authors":"K. Deepa, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8937933","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937933","url":null,"abstract":"Cu2 ZnSnS4 (CZTS) nanoparticles are synthesized using hot injection method at different durations such as 3, 6, 9 and 12h. With increase in the duration to 6h, Cu3SnS4 phase appeared to be prominent together with CZTS phase. Fixing the deposition time at 3 h, the composition is varied to get a Cu poor sample Cu(Zn+Sn) ratio of 0.78 which is known to be in the optimum range for device fabricaton. These films showed tetragonal kesterite structure of CZTS with traces of wurtzite phase. Band gap varied from 1.55 to 1.3 eV and the nanoparticles have a size of ~8 nm. The optimized film had a resistivity of 15 $Omega$ cm and mobility of 8 cm2/Vs suitable for solar cells.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85376197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effect of meso substituent on Optoelectronic Properties in BODIPY based donor acceptor Copolymers 介观取代基对BODIPY基给受体共聚物光电性能的影响
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8938014
Gourav Tarafdar, A. Kesavan, U. K. Pandey, Praveen C Ramamurthy
{"title":"Effect of meso substituent on Optoelectronic Properties in BODIPY based donor acceptor Copolymers","authors":"Gourav Tarafdar, A. Kesavan, U. K. Pandey, Praveen C Ramamurthy","doi":"10.1109/icee44586.2018.8938014","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938014","url":null,"abstract":"In this work two novel copolymers of Boron dipyrromethane (BODIPY) and Fluorene are designed, synthesized and their optoelectronics properties is reported. The polymers were designed to study the effect of the substituent at the meso position of BODIPY on the optoelectronic properties of the polymer. Changing the methyl group on the phenyl group at the meso position in the BODIPY subunit to trifluoromethyl group not only lowers the LUMO energy value but also improves the electron transport in the polymer. The polymers have also been used as electron transport material to fabricate all polymer solar cell and polymer photodetectors.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"60 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87127455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tin disulphide based electrochemical sensor for lead ions detection in water 用于水中铅离子检测的二硫化锡电化学传感器
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8938021
S. Saravanan, C. Athira, Praveen C Ramamurth
{"title":"Tin disulphide based electrochemical sensor for lead ions detection in water","authors":"S. Saravanan, C. Athira, Praveen C Ramamurth","doi":"10.1109/icee44586.2018.8938021","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8938021","url":null,"abstract":"The present study evaluates the sensing behavior of lead ions in water by tin disulphide nanomaterial synthesized by hydrothermal method and tested with a three electrode electrochemical system using square wave anodic stripping voltammetry. The experimental parameters such as deposition potential and time, the pH of the medium were optimized to get good sensitivity and selectivity of the tin disulphide towards lead ions. The as synthesized SnS2 nanomaterial can able to detect the lead ions effectively (low limit of detection) in the nano molar concentration of lead ions in water and selectively, than do other ions using interference analysis.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"1-5"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87260274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analytical model for monitoring of AFM tip wear through resonance frequency measurements 通过共振频率测量监测AFM尖端磨损的分析模型
2018 4th IEEE International Conference on Emerging Electronics (ICEE) Pub Date : 2018-12-01 DOI: 10.1109/icee44586.2018.8937987
Kiran Dhope, S. Tallur
{"title":"Analytical model for monitoring of AFM tip wear through resonance frequency measurements","authors":"Kiran Dhope, S. Tallur","doi":"10.1109/icee44586.2018.8937987","DOIUrl":"https://doi.org/10.1109/icee44586.2018.8937987","url":null,"abstract":"A sharp tip is essential for high resolution surface characterization images using atomic force microscope (AFM). We propose an analytical model for in-situ monitoring of AFM tip wear by tracking the resonance frequency of the cantilever tip that can be measured in a commercial AFM. The tip is modeled as a mass-loaded cantilever, and an expression for the resonance frequency shift with changing tip height is obtained analytically. The model agrees well with FEM simulations performed in COMSOL FEM and experimental measurements conducted with an Oxford Asylum MFP3D Origin AFM.","PeriodicalId":6590,"journal":{"name":"2018 4th IEEE International Conference on Emerging Electronics (ICEE)","volume":"57 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84887648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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