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RF voltage limiters for passive differential UHF RFID front-ends in a 40 nm CMOS technology 用于无源差分UHF RFID前端的射频电压限制器采用40纳米CMOS技术
2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI: 10.1109/MWSYM.2015.7166839
Lukas Zoscher, J. Grosinger, U. Muehlmann, H. Watzinger, W. Bosch
{"title":"RF voltage limiters for passive differential UHF RFID front-ends in a 40 nm CMOS technology","authors":"Lukas Zoscher, J. Grosinger, U. Muehlmann, H. Watzinger, W. Bosch","doi":"10.1109/MWSYM.2015.7166839","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166839","url":null,"abstract":"Passive differential UHF radiofrequency identification (RFID) front-ends may experience at high input power levels voltage amplitudes exceeding the maximum voltage ratings of the respective CMOS technology. The risk of damaging overvoltage stress increases significantly with circuits moving to technologies below the 100nm node. This work gives a discussion on characteristics of central building blocks of a UHF RFID frontend in a 40nm low-power CMOS technology under high-power conditions. The investigation reveals the limitations of front-ends without dedicated RF limiter structures. Thus, we present two stand-alone RF voltage limiter designs that mitigate overvoltage stress risks. Simulation results demonstrate the capability of the two RF limiter circuits to restrict the voltage amplitude to values of lower than 1.1V at an available power of 20 dBm.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"12 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87913607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A new method for extracting Ri and Rgd of the intrinsic transistor model of GaN HEMT based on extrema points of intrinsic Y-parameters 基于本征y参数极值点提取GaN HEMT本征晶体管模型Ri和Rgd的新方法
2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI: 10.1109/MWSYM.2015.7167071
J. Reynoso‐Hernández, Jaqueline Estrada-Mendoza, M. C. Maya‐Sanchez, M. Pulido-Gaytán, J. R. Loo-Yau, J. E. Zuniga-Juarez, J. D. del Valle-Padilla
{"title":"A new method for extracting Ri and Rgd of the intrinsic transistor model of GaN HEMT based on extrema points of intrinsic Y-parameters","authors":"J. Reynoso‐Hernández, Jaqueline Estrada-Mendoza, M. C. Maya‐Sanchez, M. Pulido-Gaytán, J. R. Loo-Yau, J. E. Zuniga-Juarez, J. D. del Valle-Padilla","doi":"10.1109/MWSYM.2015.7167071","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167071","url":null,"abstract":"The classical method for extracting the intrinsic elements of the small signal equivalent circuit of the FET is based on the knowledge of intrinsic Yij-parameters. It requires finding the frequency range where the value of each intrinsic element is frequency independent. Using the extrema (maximum or minimum) points of the intrinsic Yij-parameters, this work proposes a new and reliable method for determining the intrinsic elements Ri and Rgd of GaN HEMT.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"41 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87917801","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A X-band GaN power amplifier with Bitstream modulations and active noise filtering 一种带比特流调制和有源噪声滤波的x波段GaN功率放大器
2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI: 10.1109/MWSYM.2015.7167122
Yonghoon Song, Rui Zhu, Y. Wang
{"title":"A X-band GaN power amplifier with Bitstream modulations and active noise filtering","authors":"Yonghoon Song, Rui Zhu, Y. Wang","doi":"10.1109/MWSYM.2015.7167122","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167122","url":null,"abstract":"Power amplifiers (PAs) using Bitstream modulations such as Envelope Delta-Sigma Modulations (EDSM) have been proposed to overcome the trade-off between the linearity and efficiency in RF transmitters for signals with complex modulations. The essential idea of Bitstream amplifiers with EDSM is to translate the analogue envelope to digitized envelope so the PA can settle in several discrete driving points for high efficiency operation. The quantization noise generated due to the Bitstream modulation, however, must be rejected in a lossless fashion to guarantee the high power efficiency. The suppression of the noise power has been traditionally achieved with a passive filter, which incurs additional power loss and bulky volumes. In this paper, an active noise filtering technique is applied to suppress the quantization noise power in Bitstream transmitters by leveraging on the load modulation between the multiple identical units of PAs driven under different phase delays. A GaN PA operating at X-band has been fabricated based on Triquint's 0.25um discrete GaN HEMT devices. Two units of PAs are combined for the purpose of the active noise filtering. Driven by a single-channel WCDMA signal with 5MHz bandwidth and peak-to-average ratio (PAPR) of 5.3dB, it delivers a 35.6 dBm output power with 42.8 % drain efficiency (DE) and 33.5 % power added efficiency (PAE). The active noise filtering characteristics leading to a significant noise power reduction has also been observed in the output spectrum of the PA.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75924828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
500-600 GHz RF MEMS based tunable stub integrated in micromachined rectangular waveguide 基于500-600 GHz射频MEMS的可调谐短段集成在微加工矩形波导中
2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI: 10.1109/MWSYM.2015.7166831
U. Shah, E. Decrossas, C. Jung-Kubiak, T. Reck, G. Chattopadhyay, I. Mehdi, J. Oberhammer
{"title":"500-600 GHz RF MEMS based tunable stub integrated in micromachined rectangular waveguide","authors":"U. Shah, E. Decrossas, C. Jung-Kubiak, T. Reck, G. Chattopadhyay, I. Mehdi, J. Oberhammer","doi":"10.1109/MWSYM.2015.7166831","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166831","url":null,"abstract":"This paper presents a 500-600 GHz switchable Eplane waveguide stub tuned MEMS device. It is the first ever RF MEMS component reported to be operating above 220 GHz. The micromachined E-plane stub can be blocked/unblocked from the micromachined waveguide by using a MEMS-reconfigurable surface. The surface is designed so that in the blocking state it is in the H-plane and comprises the roof of the main waveguide, whereas in the non-blocking state it comprises a transmissive Eplane surface for the stub. The measurement results of the first prototypes show a return loss better than 15 dB from 500-600 GHz. The insertion loss is better than 3 dB up to 550 GHz, and better than 4 dB up to 600 GHz. The switchable stub can be utilized as a basic reconfigurable device for tuning/matching of waveguide components under operation; the implemented prototype switchable stub achieves a (measured) tuning of 2.5° at 500 GHz, with a change in S21 better than 0.15 dB for the whole band. The paper further shows that the reconfigurable stub can also be operated in analog tuning mode. This paper also demonstrates that MEMS-reconfigurable E-plane surfaces can be designed and operated deep into the submillimeter-wave frequency range.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"17 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80116865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Divider/combiner with enhanced isolation and reflection cancellation 具有增强隔离和反射消除的分频器/组合器
2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI: 10.1109/MWSYM.2015.7167042
A. Darwish, A. Ibrahim, J. Qiu, E. Viveiros, H. Alfred Hung
{"title":"Divider/combiner with enhanced isolation and reflection cancellation","authors":"A. Darwish, A. Ibrahim, J. Qiu, E. Viveiros, H. Alfred Hung","doi":"10.1109/MWSYM.2015.7167042","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167042","url":null,"abstract":"An advanced power divider/combiner concept is presented and demonstrated. The new concept provides significant isolation and enhanced reflection cancelation for 1:N dividers/combiners. It is demonstrated with a 1:4, 2-8 GHz, with 0.4 dB insertion loss, 20 dB isolation, and 10 dB return loss improvement over conventional (e.g. Wilkinson) dividers. Additionally, a 1:3, 4-12 GHz (100% bandwidth) divider with low insertion loss, high isolation and high return loss improvement is demonstrated.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"38 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86181481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A linear polarization continuously sweeping antenna with a variable power divider based on CRLH transmission line 基于CRLH传输线的可变功率分压器线极化连续扫描天线
2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI: 10.1109/MWSYM.2015.7167054
Y. Jiang, X. Q. Lin, F. Cheng, J. Zhang, Y. Fan
{"title":"A linear polarization continuously sweeping antenna with a variable power divider based on CRLH transmission line","authors":"Y. Jiang, X. Q. Lin, F. Cheng, J. Zhang, Y. Fan","doi":"10.1109/MWSYM.2015.7167054","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167054","url":null,"abstract":"A tunable antenna with continuously sweeping linear polarization (LP) is proposed in this paper. This tunable antenna consists of a variable power divider (VPD) based on Composite Right/Left-Handed (CRLH) transmission line and a patch antenna. The VPD is a combination of a Wilkinson power divider, a 90 degree bridge and two CRLH tunable phase shifters. The CRLH phase shifters are the core tunable components making the VPD to be tunable. The measurements show the ratio of the VPD can reach -20dB to 20dB and the linear polarization of the tunable antenna can continuously sweep for all directions.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"21 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73307077","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Traceable phase calibration of a wide-bandwidth microwave Vector Signal Analyzer 宽带微波矢量信号分析仪的可跟踪相位校准
2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI: 10.1109/MWSYM.2015.7167125
M. vanden Bossche, F. Verbeyst, A. Samant
{"title":"Traceable phase calibration of a wide-bandwidth microwave Vector Signal Analyzer","authors":"M. vanden Bossche, F. Verbeyst, A. Samant","doi":"10.1109/MWSYM.2015.7167125","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167125","url":null,"abstract":"Numerous wide-bandwidth and multi-channel applications benefit from accurate test and measurement equipment which minimize the distortion of the generated and analyzed signals. Different techniques are described in literature to achieve this for Vector Signal Analyzers. This paper presents a simple traceable phase calibration technique for wide-bandwidth Vector Signal Analyzers using a comb generator which is able to realize a dense frequency grid up to 40 GHz and above. The comb generator itself is calibrated using a technique which is traceable to electro-optical sampling as primary standard. The calibration procedure is explained in detail showing the characterized phase distortion for different center frequencies and different IF bandwidths of a commercial VSA.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82669149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Experimental study of the capabilities of the Real-Valued NARX neural network for behavioral modeling of multi-standard RF power amplifier 实值NARX神经网络用于多标准射频功率放大器行为建模能力的实验研究
2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI: 10.1109/MWSYM.2015.7166978
L. Aguilar-Lobo, J. R. Loo-Yau, S. Ortega-Cisneros, P. Moreno, J. Reynoso‐Hernández
{"title":"Experimental study of the capabilities of the Real-Valued NARX neural network for behavioral modeling of multi-standard RF power amplifier","authors":"L. Aguilar-Lobo, J. R. Loo-Yau, S. Ortega-Cisneros, P. Moreno, J. Reynoso‐Hernández","doi":"10.1109/MWSYM.2015.7166978","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166978","url":null,"abstract":"This paper evaluates the capability of a Real-Valued Nonlinear Autoregressive with exogenous Input Neural Network (RVNARXNN) to model the nonlinear behavior of multi-standard RF Power Amplifiers (PAs). The RVNARXNN is a recurrent neural network that can be trained in feedforward mode and take the advantage of real-valued representation to reduce the complexity when complex signal are used. The RVNARXNN is a neural network with good generalization performance and fast convergence, thus it is suitable for dynamic modeling of the nonlinear behavior of RF PAs with memory. The validation of the behavioral modeling with RVNARXNN is realized with a commercial PA excited with multi-standard signals as GSM, WCDMA and LTE. The results are very satisfactory and suggest the possibility of using this type of neural network for the development of a digital pre-distortion technique for multi-standard power amplifiers.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"52 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87083831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The high-frequency limits of SIS receivers SIS接收机的高频限制
2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI: 10.1109/MWSYM.2015.7167149
J. Zmuidzinas
{"title":"The high-frequency limits of SIS receivers","authors":"J. Zmuidzinas","doi":"10.1109/MWSYM.2015.7167149","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167149","url":null,"abstract":"The field of submillimeter-wavelength astronomy is blossoming thanks to major investments such as the Atacama Large Millimeter/Submillimeter Array (ALMA) and the Herschel Space Telescope. These projects were enabled by the development of very sensitive receivers, especially those using Superconductor-Insulator-Superconductor (SIS) tunnel junction diodes. Here I review some of the challenges that were faced in pushing this technology from its first demonstrations around 100 GHz to its upper frequency limit beyond 1.2 THz.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"126 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87709956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wearable wireless electronics 可穿戴无线电子产品
2015 IEEE MTT-S International Microwave Symposium Pub Date : 2015-05-17 DOI: 10.1109/MWSYM.2015.7167104
V. Lubecke
{"title":"Wearable wireless electronics","authors":"V. Lubecke","doi":"10.1109/MWSYM.2015.7167104","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167104","url":null,"abstract":"A key component to wearable technology is wireless functionality allowing untethered interaction between the body and the outside world. Furthermore, wearables can use wireless technology not only for communications, but also for energy and sensing. An introductory overview is provided highlighting applications and methods associated with research in wearable wireless technology.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"34 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90420543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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