A new method for extracting Ri and Rgd of the intrinsic transistor model of GaN HEMT based on extrema points of intrinsic Y-parameters

Abstract

The classical method for extracting the intrinsic elements of the small signal equivalent circuit of the FET is based on the knowledge of intrinsic Yij-parameters. It requires finding the frequency range where the value of each intrinsic element is frequency independent. Using the extrema (maximum or minimum) points of the intrinsic Yij-parameters, this work proposes a new and reliable method for determining the intrinsic elements Ri and Rgd of GaN HEMT.