J. Reynoso‐Hernández, Jaqueline Estrada-Mendoza, M. C. Maya‐Sanchez, M. Pulido-Gaytán, J. R. Loo-Yau, J. E. Zuniga-Juarez, J. D. del Valle-Padilla
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A new method for extracting Ri and Rgd of the intrinsic transistor model of GaN HEMT based on extrema points of intrinsic Y-parameters
The classical method for extracting the intrinsic elements of the small signal equivalent circuit of the FET is based on the knowledge of intrinsic Yij-parameters. It requires finding the frequency range where the value of each intrinsic element is frequency independent. Using the extrema (maximum or minimum) points of the intrinsic Yij-parameters, this work proposes a new and reliable method for determining the intrinsic elements Ri and Rgd of GaN HEMT.
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