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Phase transformation experimental study of IC chip power supplying grounding on ferroelectric ceramic porous material 铁电陶瓷多孔材料IC芯片供电接地相变实验研究
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424716
Zhenhai Zhang, Zhanzhong Cui, Jinglong Yan, Kejie Li
{"title":"Phase transformation experimental study of IC chip power supplying grounding on ferroelectric ceramic porous material","authors":"Zhenhai Zhang, Zhanzhong Cui, Jinglong Yan, Kejie Li","doi":"10.1109/INEC.2010.5424716","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424716","url":null,"abstract":"We demonstrated both experimentally and in theory analysis and calculation that the PSZT nanoporous ferroelectric generator (FEG) system can perform as a micro-power supplying source for IC chip. The nanoceramic phase transition under transverse shock wave compression can charge external storage capacitor. The nanoporous microstructure ferroelectric micro-pulsed-power system is capable of generating low output voltage pulses with amplitudes 54.2V and with transferred energy 1.73mJ, and supplying IC chip with micro power sources. We developed the methodology for theory analysis and experimental operation of the ferroelectric generator. The experimental results were in good agreement with the theory analysis.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"7 4 1","pages":"628-629"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78088619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Stable colloidal dispersions of silicon nanoparticles for the fabrication of films using inkjet printing technology 用喷墨打印技术制备薄膜的稳定胶体分散硅纳米颗粒
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5425068
Anoop K. Gupta, A. Khalil, M. Winterer, H. Wiggers
{"title":"Stable colloidal dispersions of silicon nanoparticles for the fabrication of films using inkjet printing technology","authors":"Anoop K. Gupta, A. Khalil, M. Winterer, H. Wiggers","doi":"10.1109/INEC.2010.5425068","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425068","url":null,"abstract":"The formation of stable colloidal dispersions of nanoparticles is essential for the manufacture of electronic and optoelectronic devices using cost-effective printing technologies. In this study, we examined the stability of silicon nanoparticles (Si-NPs) in aqueous medium at different pH. The Si-NPs show high zeta potential values within pH = 6.5 – 8.5. In addition, the Si-NPs do not show any isoelectric point in the pH range studied. It is observed that the stability of Si-NPs in aqueous medium increases after the addition of ethanol. In order to stabilize Si-NPs in organic solvents, their surface is functionalized with alkyl groups via a thermally induced alkylation process. The functionalized Si-NPs form nice, transparent dispersions in a variety of organic solvents and no sedimentation of functionalized samples was observed over any period of time. Fabricating films of Si-NPs using inkjet printing is currently under investigation.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"25 1","pages":"1018-1019"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78253720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High efficient self-assembly CdSe/ZnS quantum dots light-emitting devices in organic matrix 有机基质中高效自组装CdSe/ZnS量子点发光器件
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424530
A. Uddin, C. Teo
{"title":"High efficient self-assembly CdSe/ZnS quantum dots light-emitting devices in organic matrix","authors":"A. Uddin, C. Teo","doi":"10.1109/INEC.2010.5424530","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424530","url":null,"abstract":"We have fabricated and investigated the effect of CdSe/ZnS quantum dot (QD) concentrations on self-assembly hybrid organic/inorganic light emitting diodes (QD-OLEDs). The uniform distribution of QDs with controllable density was achieved using the conventional spin-coating method. There was a QD threshold concentration below which there was no emission from the QDs. The estimated QD concentration was around 9×1011 cm−2 for the best performance of QD-OLED. The QD emission was increased about three times by annealing of QDOLED.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"2005 1","pages":"750-751"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78569484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Construction and operation of sub-10 nm vertical molecular transistors 亚10nm垂直分子晶体管的构建与运行
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424686
E. Mentovich, S. Richter
{"title":"Construction and operation of sub-10 nm vertical molecular transistors","authors":"E. Mentovich, S. Richter","doi":"10.1109/INEC.2010.5424686","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424686","url":null,"abstract":"We present a novel type of nano device: the sub-10 nm vertical molecular transistor. This device can be fabricated using conventional lithographic methods and in mass production. We use this transistor to explore the transport mechanism of various molecular systems such molecular quantum dots and doped proteins","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"39 1","pages":"646-647"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77975121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of THz concentric circular metal grating with TM polarization TM偏振太赫兹同心圆金属光栅的建模
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424696
X. F. Li, S. Yu
{"title":"Modeling of THz concentric circular metal grating with TM polarization","authors":"X. F. Li, S. Yu","doi":"10.1109/INEC.2010.5424696","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424696","url":null,"abstract":"A rigorous coupled-wave model describing the diffraction characteristics of transverse-magnetic (TM) waves by a concentric-circular metal grating (CCMG) operating within terahertz regime is presented. The high-order diffracted cylindrical waves are taken into account by expanding the TM field as infinite spatially harmonic Floquet waves obey Hankel distribution. The proposed model is inherently convergent and the diffraction characteristics of the system can be stabilized under a small amount of diffraction waves. Results show that only a few of them can keep propagating after being reflected by the grating and the rest waves are evanescent. The incident frequency effect on the diffraction efficiency is investigated and the detailed field distribution in the injecting region is presented.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"19 1","pages":"293-294"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74735859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of ultra-sharp single atom tips 超锋利单原子尖端的制造
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424585
T. Fu, Chia-Lun Chiang, R. Lin, Jin-Long Hou, H. Kuo, I. Hwang, T. Tsong
{"title":"Fabrication of ultra-sharp single atom tips","authors":"T. Fu, Chia-Lun Chiang, R. Lin, Jin-Long Hou, H. Kuo, I. Hwang, T. Tsong","doi":"10.1109/INEC.2010.5424585","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424585","url":null,"abstract":"Ultra high vacuum - field ion microscopy (UHV-FIM) with atomic resolution was used to study the methods of preparing ultra-sharp single atom tips. Several treatments including annealing, depositing, exposing to special gas, keep in a given atmosphere, and so on were the possible tactics to sharpen the tips. The sharpen results of various treatments were observed by field ion microscope. Two kinds of magnetic nano tips were formed. One is a PtCo pyramidal tip formed by surface faceting, the other is a Pt based Co tip formed by the SK mode epitaxy.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"142-143"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74416184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Raman mapping probing of V2O5 waveguiding nanoribbons V2O5波导纳米带的拉曼映射探测
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424720
T. Yu, B. Yan, Y. You, C. Du, Z. Zheng, Zexiang Shen
{"title":"Raman mapping probing of V2O5 waveguiding nanoribbons","authors":"T. Yu, B. Yan, Y. You, C. Du, Z. Zheng, Zexiang Shen","doi":"10.1109/INEC.2010.5424720","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424720","url":null,"abstract":"Considering the smooth surface and high refractive index which give rise to the tight optical confinement, it is the first demonstration of efficient light propagation in V2O5 nanoribbons. The results provide useful information for the construction of future nanoscaled waveguide structures. Moreover, regular V2O5 waveguides were found to exhibit Raman signals with near-resonance excitation and guide these modes through the nanoribbon cavity. The results shown here provide experimental support for the development of novel nanophotonic elements. Furthermore, we discovered that the waveguiding property of the nanoribbon can modulate the polarized Raman scattering signal depending on the local field of the sample.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"31 1","pages":"324-325"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74417744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis strategy for 1D magnetic ternary amorphous nanoalloys 一维磁性三元非晶纳米合金的合成策略
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424573
M. Wen, Fan Zhang, Qingsheng Wu
{"title":"Synthesis strategy for 1D magnetic ternary amorphous nanoalloys","authors":"M. Wen, Fan Zhang, Qingsheng Wu","doi":"10.1109/INEC.2010.5424573","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424573","url":null,"abstract":"A new synthesis strategy was put forward for obtaining these 1D amorphous alloy nanorods through inducing assembly by ternary component system. It is a simple way to successfully obtain 1D amorphous nanoalloys of NiFePt and EuFePt without any hard template in one-pot solvent thermal system. And 1D alloy nanorods present larger magnetic anisotropy with higher coercivity than that of alloy nanoparticles.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"126-127"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79116506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The effects of bi-layer catalysts and its annealing on the growth of GaN nanowires 双层催化剂及其退火对氮化镓纳米线生长的影响
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5425038
D. Kuo, Wei-Ting Shen
{"title":"The effects of bi-layer catalysts and its annealing on the growth of GaN nanowires","authors":"D. Kuo, Wei-Ting Shen","doi":"10.1109/INEC.2010.5425038","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425038","url":null,"abstract":"We report an evaporation reaction to synthesize GaN nanowires at 800°C on metallic bi-layer catalyst-coated substrates and on the bi-layer catalyst-annealed substrates through the reaction of GaN and NH3. The annealing temperatures of catalyst layers before the GaN growth were 700°C and 850°C. Bi-layer metallic catalysts were constituted with Au, Ni, Al, and In. The growth differences caused by the stacking sequence of bi-layer catalysts and the annealing conditions were investigated. The understanding of those differences can help to know the growth mechanism.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"26 1","pages":"1064-1065"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79213195","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Highly efficient red phosphorescent Ir(III) complexes for oleds based on carbonylated arylpyridine ligands 基于羰基化芳基吡啶配体的高效红色磷光Ir(III)配合物
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424554
Kum-Hee Lee, H. Kang, S. Lee, J. Seo, Young Kwan Kim, S. Yoon
{"title":"Highly efficient red phosphorescent Ir(III) complexes for oleds based on carbonylated arylpyridine ligands","authors":"Kum-Hee Lee, H. Kang, S. Lee, J. Seo, Young Kwan Kim, S. Yoon","doi":"10.1109/INEC.2010.5424554","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424554","url":null,"abstract":"A new series of the carbonylated arylpyridine derived iridium complexes were synthesized and their photophysical and electroluminescent properties were characterized. Multilayer devices with the configuration of ITO / 2-TNATA (60 nm) / NPB(20 nm)/ Ir complexes doped in CBP(30 nm) / BCP(10 nm) / Alq3(20 nm) / Liq(2 nm)/ Al(100 nm) were fabricated. In the device employing complex 2 as dopant, the maximum luminance, luminanous efficiency, and power efficiency were 16200 cd/m2 at 14 V, 12.20 cd/A at 20 mA/cm2 and 4.26 lm/W at 20 mA/cm2, respectively, at the CIE coordinates of (0.626, 0.373) at 12.0 V.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"PP 1","pages":"734-735"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84322135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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