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2010 3rd International Nanoelectronics Conference (INEC)最新文献

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Evaluating biocompatibility of semiconductive gallium nitride, flat and nano-structured silicon chips by cell viability, adhesion and growth 通过细胞活力、粘附和生长来评价半导体氮化镓、平面和纳米结构硅片的生物相容性
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5425190
Yu-Ting Kang, T. Yen
{"title":"Evaluating biocompatibility of semiconductive gallium nitride, flat and nano-structured silicon chips by cell viability, adhesion and growth","authors":"Yu-Ting Kang, T. Yen","doi":"10.1109/INEC.2010.5425190","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425190","url":null,"abstract":"We show that two dominant semiconductors gallium nitride (GaN) and silicon nanorods (SiNR) exhibit excellent biocompatibility, the most important property in the research of bio-medical materials. The result of MTT assays indicates no cytotoxicity and the observation of cellular morphology further reveals outstanding adhesion and extension of L929 cells (mouse fibroblasts) in both the GaN and silicon substrates. Consequently, combining the advantages of semiconductors including controllable electric properties and mature fabrication with the demonstrated favorable biocompatibility, GaN and SiNR are promising materials for neuron bio-chips, medical devices and other bio-medical application.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"811-812"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89270223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Direct growth of Nb2O5 nanobelts on Nb foil Nb2O5纳米带在铌箔上的直接生长
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5425019
B. Gao, K. Huo, Jijiang Fu, P. Chu
{"title":"Direct growth of Nb2O5 nanobelts on Nb foil","authors":"B. Gao, K. Huo, Jijiang Fu, P. Chu","doi":"10.1109/INEC.2010.5425019","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425019","url":null,"abstract":"Self-organized Nb2O5 nanobelt scaffolds and quasi-aligned bamboo slip-like Nb2O5 nanobelt arrays have been directly fabricated on Nb foils by a hydrothermal reaction in an alkaline solution followed by protonation and annealing. The length and width of the nanobelts can be controlled by varying the fabrication parameters such as reaction temperature, alkaline concentration, and reaction time. The morphology, structure and composition of the nanobelts were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectrometry (XPS).","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"55 1","pages":"1092-1093"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87220255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication of Si/SiO2/Au nanoparticles/HfO2 MOS capacitor structure by spin coating method 自旋镀膜法制备Si/SiO2/Au纳米颗粒/HfO2 MOS电容器结构
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424590
Shih-Tang Chen, Hua-Chiang Chen, Kun-Cheng Huang, Fu-Ken Liu, C. Leu
{"title":"Fabrication of Si/SiO2/Au nanoparticles/HfO2 MOS capacitor structure by spin coating method","authors":"Shih-Tang Chen, Hua-Chiang Chen, Kun-Cheng Huang, Fu-Ken Liu, C. Leu","doi":"10.1109/INEC.2010.5424590","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424590","url":null,"abstract":"In this work, a Metal-Oxide-Semiconductor (MOS) capacitor (Si/SiO2/Au nanoparticles/HfO2) has been fabricated. Gold (Au) nanoparticles with particle size of about 3.3nm were synthesized by chemical reduction method. Then the self-assembled gold nanoparticles were attached to 3-aminopropyltrimethoxysilane (APTMS) modified silicon oxide substrates by the spin coating method. With the spin coating method, the gold nanoparticles can be fabricated onto 5.0 nm thermally grown silicon oxide with highly packing density of 1×1012cm−2 in a short processing time. Finally, the sol-gel derived HfO2 layer was spin coated to construct a Si/SiO2/Au nanoparticles/HfO2 structure. The MOS structure embedded with Au nanoparticles showed well defined counterclockwise C-V hysteresis curves which indicating a good memory effect. The flat-band voltage shift was about 2.7 V at a swapping voltage between ±5V. Furthermore, the MOS structure embedded with Au nanoparticles behaved a desirable retention characteristic up to 104s. We have succeeded to fabricate the Metal-Oxide-Semiconductor capacitor structure (Si/SiO2/Au nanoparticles/HfO2) by a spin coating method. The spin coating method has many advantages like short fabrication time, high uniformity, and better reproducibility when compared with the traditional immersion method. Therefore, the spin coating method has the potential to be applied to nanofabrication processes in mass production.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"3 1","pages":"710-711"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88197919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis of Ni/TiO2 nanocomposite by loading TiO2 nanotubes with Ni nanoparticles Ni纳米颗粒负载TiO2纳米管合成Ni/TiO2纳米复合材料
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5425035
Yannan Yang, Yunhuai Zhang, P. Xiao, Xiaoning Zhang, Lu Lu, Lu Li
{"title":"Synthesis of Ni/TiO2 nanocomposite by loading TiO2 nanotubes with Ni nanoparticles","authors":"Yannan Yang, Yunhuai Zhang, P. Xiao, Xiaoning Zhang, Lu Lu, Lu Li","doi":"10.1109/INEC.2010.5425035","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425035","url":null,"abstract":"Synthesis of Ni nanoparticles on TiO2 nanotubes was carried out using a pulsed electrodeposition technique. TiO2 nanotubes were fabricated by anodization. The influence of the pulse electrodeposition conditions (current amplitudes, pulse time of negative current and substrate conductivity) was investigated on the surface morphology of Ni electrodeposited on TiO2 nanotube arrays. The particle size and surface morphology of Ni deposits were studied by field emission scanning electron microscopy (FESEM). The result indicated that the average size of Ni nanoparticles was varied from 20 to 43 nm. The phase structure of Ni/TiO2 materials was studied by X-ray diffraction (XRD). The experiment found that enhancing the conductivity of the TiO2 nanotubes was a key factor for the successful deposition of Ni nanoparticles.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"44 1","pages":"1059-1060"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79673179","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhancement of ordering and perpendicular magnetic properties of CoPt films by adding Ag underlayer 添加银底层增强CoPt薄膜的有序磁性和垂直磁性
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424949
C. Shen, P. Kuo, Y. S. Li, G. Lin, K. Huang, S. C. Chen
{"title":"Enhancement of ordering and perpendicular magnetic properties of CoPt films by adding Ag underlayer","authors":"C. Shen, P. Kuo, Y. S. Li, G. Lin, K. Huang, S. C. Chen","doi":"10.1109/INEC.2010.5424949","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424949","url":null,"abstract":"CoPt/Ag films were prepared by magnetron sputtering on glass substrates and subsequent annealing. The dependence of ordering degree and magnetic properties on Ag film thickness and annealing conditions were investigated. It was found that the Ag underlayer played a dominant role in inducing the (001) texture of the CoPt film after annealing. CoPt films with a thickness about 20 nm and Ag underlayers with a thickness about 70 nm are easy to obtain a well ordering degree and a perpendicular magnetic anisotropy after annealing at 700 °C for 30 min. CoPt/Ag films with a large perpendicular coercivity in the range of 13.5–14.0 kOe and a perpendicular squareness of 0.97 were obtained after annealing at 700 °C for 30 min. Ag underlayer is beneficial to enhance the perpendicular coercivity (Hc⊥) and perpendicular squareness (S⊥) of CoPt film significantly. The ordering degree and perpendicular magnetic properties of the CoPt films which deposited on Ag underlayer are larger than those of the single layer CoPt films.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"122 1","pages":"507-508"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82006851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Identification of different concentrations of antibody by electrical property of DLC thin films 利用DLC薄膜的电学性质鉴定不同浓度的抗体
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424636
V. Amornkitbamrung, Kridsanapan Srimongkon, N. Faibut, Samarn Saekow
{"title":"Identification of different concentrations of antibody by electrical property of DLC thin films","authors":"V. Amornkitbamrung, Kridsanapan Srimongkon, N. Faibut, Samarn Saekow","doi":"10.1109/INEC.2010.5424636","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424636","url":null,"abstract":"Hydrophobic properties, electrical properties, ratio of diamond and graphite contents and X-ray diffraction pattern are characterized of diamond-like-carbon thin films which are grown on silicon substrate by RF-CVD. Seeding techniques are varied in this experiment. Silicon substrate is cleaned with three different solvents by ultrasonic cleaner i.e. acetone, methanol, and de-ionized water about 5 minutes in each solvent. The size of 4–5 nanometers diamond powder suspension in methanol of 0.0010g/50ml is used for electro-deposition technique. Voltage between electrodes is 30 V and seeding times is 25 minutes. These are seeding conditions. Normal seeding, normal seeding then cleaning by ultrasonic cleaner in methanol, and seeding and cleaning at the same time are three different seeding techniques. DLC thin films are grown by RF-CVD at power of 100 W, pressure of 8.5 mbar, growth time of 30 minutes and H2 and CH4 flow rate of 6.50 and 1.50 sccm respectively. It is found that the results of the three techniques of seeding are nearby, for example, they have a hydrophobic property and their XRD patterns are quite similar. IV-characteristic is measured by Van der Pauw 4 point probe technique. When pure water, and several concentrations of antibody are dropped on the films, their IV-curves can be distinguished.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"48 1","pages":"210-211"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91138412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystallization and electrochemical corrosion behaviors of amorphous and nanocrystalline Fe-based alloys 非晶和纳米晶铁基合金的结晶和电化学腐蚀行为
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5425104
Xiang Li, Yuxin Wang, Chunfeng Du, Chenkui Li, B. Yan
{"title":"Crystallization and electrochemical corrosion behaviors of amorphous and nanocrystalline Fe-based alloys","authors":"Xiang Li, Yuxin Wang, Chunfeng Du, Chenkui Li, B. Yan","doi":"10.1109/INEC.2010.5425104","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425104","url":null,"abstract":"Amorphous Fe<inf>73.5</inf>Si<inf>13.5</inf>B<inf>9</inf>Nb<inf>3</inf>Cu<inf>1</inf> alloy was prepared by the chill block melt-spinning process and nanocrystalline alloy was obtained by annealing. The crystallization behavior was analysed by DSC, XRD and TEM. The electrochemical corrosion behaviors in different annealed states were performed by linear polarization method and electrochemical impedance spectroscopy in 1mol/L HCl solution. The results show that the crystallization of amorphous alloy occurs in the two steps. Some nanometer crystals appear when annealing in 550°C and 600°C, respectively with grain size 13nm and 15nm. The nanocrystalline alloy has higher corrosion potential and lower anodic current density than amorphous alloy. It indicates that nanocrystalline alloy has a higher corrosion resistance. Amorphous and nanocrystalline Fe<inf>73.5</inf>Si<inf>13.5</inf>B<inf>9</inf>Nb<inf>3</inf>Cu<inf>1</inf> alloys both consisted of only single semi-circle. The charge transfer reaction resistances increases as annealing temperature rises.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"143 1","pages":"962-963"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91179134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Introducing time-dependant sources for solving time-domain Schrödinger equation using FDTD method 介绍用时域有限差分法求解时域Schrödinger方程的时变源
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424536
Xiao-Ying Wang, Wenting Guo, Chengzhi Li, Jin Lan, W. Sui
{"title":"Introducing time-dependant sources for solving time-domain Schrödinger equation using FDTD method","authors":"Xiao-Ying Wang, Wenting Guo, Chengzhi Li, Jin Lan, W. Sui","doi":"10.1109/INEC.2010.5424536","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424536","url":null,"abstract":"A numerical approach to introduce excitations in finite-difference time-domain (FDTD) method that solves time-domain Schrödinger equation is presented in this paper. The proposed approach which used to solve electromagnetic waves incidence has its novel application in this study. It can ensure incident electron wave propagate in a designated direction. The corresponding three-dimensional FDTD formulations and modified formulations at the incident boundary are both derived. To verify the proposed method, transmission coefficient of tunneling structures is calculated and the simulation results show high accuracy compared with the analytical solutions. Therefore this approach is proven versatile in solving the time-domain Schrödinger equation and it gives an effective method to analyze other more complicated structures and lays the foundation for future research work in related areas.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"41 1","pages":"746-747"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91221074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dielectrophoretic addressable deposition of arc-SWCNTs for high-throughput screening FET arrays 用于高通量筛选FET阵列的电弧- swcnts介电泳可寻址沉积
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424895
W. Guo, Zengpei Dou, Xiaoxue Tian, Hongfang Sun, Yanyi Huang, Dongsheng Xu, Yuanfang Liu
{"title":"Dielectrophoretic addressable deposition of arc-SWCNTs for high-throughput screening FET arrays","authors":"W. Guo, Zengpei Dou, Xiaoxue Tian, Hongfang Sun, Yanyi Huang, Dongsheng Xu, Yuanfang Liu","doi":"10.1109/INEC.2010.5424895","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424895","url":null,"abstract":"For fabrication of arc-discharged single walled carbon nanotubes (arc-SWCNTs) based FET array, controllable deposition of SWNTs is an important issue. In this study highly purified arc-SWCNTs are deposited on the high-throughput screening FET array via the addressable dielectrophoresis method. The electrodes array are designed with different electrode gaps, from 3 to 20 µm, every electrode has its own address. In order to limit the SWCNTs to be deposited within the electrodes area, we designed a deposition window on the silicon chip surface by the optical lithography. Then the diluted SWCNTs solution was dropped onto the limited window. By setting a voltage (10 V, 100 kHz) between a specific source electrode and the shared drain electrode, the SWCNTs can be aligned evenly within the pair of electrodes via the dielectrophoresis process. This method might facilitate the controllable fabrication of high throughput screening SWCNTs-FET arrays for biosensors.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"1 1","pages":"490-491"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89602425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Crystallization behavior of Ni-Nb-Sb system bulk metallic glass Ni-Nb-Sb系大块金属玻璃的结晶行为
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5425131
Junxia Lu, Jiliang Zhang, C. Shek
{"title":"Crystallization behavior of Ni-Nb-Sb system bulk metallic glass","authors":"Junxia Lu, Jiliang Zhang, C. Shek","doi":"10.1109/INEC.2010.5425131","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425131","url":null,"abstract":"The crystallization of (Ni8Nb5)99.5Sb0.5 bulk metallic glass at the temperature of 700°C in the synthetic air was investigated. Crystallization occurred to form the columbite NiNb<inf>2</inf>O<inf>6</inf> and oxides Nb<inf>2</inf>O<inf>5</inf> and NiO. The surface presented the compact and continuous structure. The cross section shows that the oxide scale is about 40 µm depth. The upper scale forms the compact structure, however, loose one with the lamellar structure was observed with the depth. In the internal, a compact transition layer was also seen.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":"590 1","pages":"907-908"},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73461015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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