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A synthetic strategy of quantum dot-bioconjugate 量子点-生物偶联物的合成策略
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-12-13 DOI: 10.1109/INEC.2010.5424726
Qiangbin Wang, Hao Yan, D. Seo
{"title":"A synthetic strategy of quantum dot-bioconjugate","authors":"Qiangbin Wang, Hao Yan, D. Seo","doi":"10.1109/INEC.2010.5424726","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424726","url":null,"abstract":"Quantum dots (QDs) have attracted tremendous interest in biological applications, such as bioimaging, biolabeling, and biosensing, because of their advantages over organic fluorophores at high quantum yield (QY), size-tunable narrow emission, photostability, etc. To date, various strategies have been developed to obtain water-soluble QDs and QD bioconjugates, but these commonly require multiple steps to obtain the final products. Herein, we present a simple and robust one-step method for creating stable, water-soluble QD and QD-biomolecule conjugates. We demonstrate the successful implementation of this strategy by using mercaptopropyl acid and DNA molecules as model systems, but expect this could also be extended to other types of biomolecules.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88640717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanical and electrical properties of Cu-Ag nanocomposites processed by equal channel angular pressing (ECAP) 等通道角压Cu-Ag纳米复合材料的力学和电学性能
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424899
Kyu-Jin Cho, S. Hong
{"title":"Mechanical and electrical properties of Cu-Ag nanocomposites processed by equal channel angular pressing (ECAP)","authors":"Kyu-Jin Cho, S. Hong","doi":"10.1109/INEC.2010.5424899","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424899","url":null,"abstract":"Equal channel angular pressing was carried out on Cu-Ag composites at room temperature. ECAPed Cu-Ag exhibited ultrafine structure with the shape and distribution of Ag phase dependent on the processing routes. In route A, the initial lamellae of Ag phase were elongated along the shear direction and developed into filaments whereas the initial lamellae became finer by fragmentation with no pronounced change of the shape in route Bc. The hardness of ECAPed Cu-Ag is greater than that of ECAPed Cu. The higher hardness in Cu-Ag is ascribed to the more effective matrix strengthening due to the dislocation storage at the interface and the precipitation hardening. The hardness of ECAPed Cu-Ag was lower than the drawn Cu-Ag at the same deformation strain because of the less effective refinement and elongation of the two-phase filamentary microstructure. The application of ECAP in Cu-Ag was found to be effective in the modification of structure, shape and distribution of phases in composite and the increase of the strength.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73477650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced UV lasing emission from ZnO-MgO core-shell structure ZnO-MgO核壳结构增强紫外激光发射
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424706
H. Yang, S. Yu, T. Wu
{"title":"Enhanced UV lasing emission from ZnO-MgO core-shell structure","authors":"H. Yang, S. Yu, T. Wu","doi":"10.1109/INEC.2010.5424706","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424706","url":null,"abstract":"We investigate the effect of modification of ZnO nanorods surfaces with amorphous MgO layer on the lasing emission from ZnO nanorods.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74296760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation of silicon nanowire arrays via electroless metal deposition 化学金属沉积法制备硅纳米线阵列
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424540
Xuan Liu, Qingsong Hu
{"title":"Preparation of silicon nanowire arrays via electroless metal deposition","authors":"Xuan Liu, Qingsong Hu","doi":"10.1109/INEC.2010.5424540","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424540","url":null,"abstract":"Large-area silicon nanowire arrays are prepared successfully with mixed AgNO3 and HF solution by EMD method at normal temperature and pressure. It has been proved the best equality of silicon nanowires can be obtained at the concentration ratio of 0.02 mol/l: 5mol/l for AgNO3 and HF and 1h reaction time. The influence of nano metal particles on the growth, the wire diameter, the distribution and the array of silicon nanowires are analyzed. Experimental results show the distribution and wire diameter of silicon nanowires can be controlled effectively by nano metal particles deposited on silicon wafers, and the equality of silicon nanowires with nano Au particles are better than those with nano Pt particles. The reaction mechanism of preparing large-area silicon nanowire arrays is analyzed as the result of the deoxidization of Ag+ and the removal of the oxidized Si solution by reacting with HF.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75426141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Microstructure and thermal properties of phase change (GeSbSn)100-xCox optical recording films 相变(GeSbSn)100-xCox光记录薄膜的微观结构和热性能
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424938
S. Ou, P. Kuo, S. Ma, C. Shen, W. Tang, D. Chiang, C. Lee
{"title":"Microstructure and thermal properties of phase change (GeSbSn)100-xCox optical recording films","authors":"S. Ou, P. Kuo, S. Ma, C. Shen, W. Tang, D. Chiang, C. Lee","doi":"10.1109/INEC.2010.5424938","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424938","url":null,"abstract":"In this study, the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films (x = 0 ∼ 13.3) were deposited on natural oxidized silicon wafer and glass substrate by dc magnetron co-sputtering of GeSbSn and Co targets. The thicknesses of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf>films and protective layer were 100 nm and 30 nm, respectively. The phase transition temperatures of (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films are decreased with Co content. It is found that the activation energy of the (GeSbSn)<inf>100-x</inf>Co<inf>x</inf> films will decrease from 1.53 eV to 0.55 eV as Co content increased from 0 at.% to 13.3 at.%.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75653041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Piezomagnetic properties and shielding properties of amorphous and nanocrystalline powders / butyl rubber composite films 非晶和纳米晶粉末/丁基橡胶复合薄膜的压磁性能和屏蔽性能
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424766
X. Xu, Zhenghou Zhu, Huizong Song, Zhenzhen Wan, H. Peng, Junfu Huang
{"title":"Piezomagnetic properties and shielding properties of amorphous and nanocrystalline powders / butyl rubber composite films","authors":"X. Xu, Zhenghou Zhu, Huizong Song, Zhenzhen Wan, H. Peng, Junfu Huang","doi":"10.1109/INEC.2010.5424766","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424766","url":null,"abstract":"The composite films of amorphous and nanocrystalline Fe73.5Cu1Nb3Si13.5B9 powders/butyl rubber were prepared by pressing in the mold to shape. The piezomagnetic properties of composite films were studied in the temperature range of 20–50 Celsius degree with theshielding properties in the frequency band (30kHz–6000MHz) of electromagnetic wave. The results show that when the microstress below 0.09MPa and testing frequency below 200kHz, the piezomagnetic properties are the best and theirs piezomagnetic properties increase as temperatures increase, the piezomagnetic properties of amorphous composite films are the best at 40 Celsius degree. Within frequency band (30kHz–6000MHz) of electromagnetic wave, the films have good characteristics of shielding high-frequency and broad-frequency electromagnetic waves. The shielding properties are improved significantly as the content of powder or the thickness of materials increases. Shielding effectiveness above 15dB is obtained at certain experimental parameters.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74387945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hybrid inorganic-organic films with Benzaldehyde-based chromophore for electro-optic device 电光器件用苯甲醛基发色团无机-有机杂化薄膜
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424687
Yuanjing Cui, Jingting Hu, Jiancan Yu, Jing-Shen Qiu, Liying Liu, Lei Xu, G. Qian
{"title":"Hybrid inorganic-organic films with Benzaldehyde-based chromophore for electro-optic device","authors":"Yuanjing Cui, Jingting Hu, Jiancan Yu, Jing-Shen Qiu, Liying Liu, Lei Xu, G. Qian","doi":"10.1109/INEC.2010.5424687","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424687","url":null,"abstract":"A novel alkoxysilane-functionalized push-pull chromophore was synthesized through a coupling reaction between a benzaldehyde-based chromophore, 4-aldehyde-4'-(N-ethyl-N-2-hydroxyethyl aminoazobenzene (BA) and 3-isocyanatopropyltriethoxysilane (ICTES). Followed by a hydrolysis and condensation process of the resultant alkoxysilane dye and tetraethoxysilane (TEOS), hybrid inorganic-organic materials were obtained. The hybrid materials exhibited excellent film homogeneity and optical clarity. Molecular structural and physical properties were characterized by FTIR, NMR, UV-vis spectroscopy, thermogravimetric analysis, and differential scanning calorimetry. Second harmonic generation and electro-optic modulation studies were also conducted on this material.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74508382","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The valence charge polarization induced by the shorter and stronger bonds between under-coordinated gold atoms 低配位金原子间较短较强的键引起的价电荷极化
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424627
Xi Zhang, J. Kuo, M. Gu, Xiaofeng Fan, P. Bai, Q. Song, C. Q. Sun
{"title":"The valence charge polarization induced by the shorter and stronger bonds between under-coordinated gold atoms","authors":"Xi Zhang, J. Kuo, M. Gu, Xiaofeng Fan, P. Bai, Q. Song, C. Q. Sun","doi":"10.1109/INEC.2010.5424627","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424627","url":null,"abstract":"Relativistic density functional theory calculations have been conducted to examine the effect of atomic under-coordination. The calculated results agree exceedingly well with experimental observations: skin-depth bond contraction, chain end stats polarization, potential well depression, core level shift, and the valence charge polarization of gold nanostructures. Consistency between calculations and experimental observations affirms the prediction of the bond-order-length-strength (BOLS) correlation theory [Sun CQ, Phys Rev B 69, 045105 (2004)], asserting that the under-coordinated surface atoms are indeed associated with local strain, quantum trap depression, charge densification and valence charge polarization and that the locally polarized and pinned electrons are responsible for the metal-insulator transition and magnetism present of gold nanoparticles.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73687481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of multiferroic thin films directly deposited on silicon for novel device applications 直接沉积在硅上的多铁薄膜在新型器件中的应用
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5425138
K. Prashanthi, V. Palkar
{"title":"Characterization of multiferroic thin films directly deposited on silicon for novel device applications","authors":"K. Prashanthi, V. Palkar","doi":"10.1109/INEC.2010.5425138","DOIUrl":"https://doi.org/10.1109/INEC.2010.5425138","url":null,"abstract":"we have investigated the multiferroic and dielectric properties in Dy modified BiFeO3 thin films deposited directly on silicon using pulsed laser deposition (PLD) technique. The results support the usability of these films in multiferroic based MEMS devices as well as gate dielectrics for future CMOS applications.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74281633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and characterization of twin poly-Si thin film transistors EEPROM with nitride trapping layer 带氮化物捕获层的双多晶硅薄膜EEPROM的制备与表征
2010 3rd International Nanoelectronics Conference (INEC) Pub Date : 2010-03-04 DOI: 10.1109/INEC.2010.5424704
Yung-Chun Wu, Min-Feng Hung, Ji-Hong Chiang, Lun-Jyun Chen, Chiang-Hung Chen
{"title":"Fabrication and characterization of twin poly-Si thin film transistors EEPROM with nitride trapping layer","authors":"Yung-Chun Wu, Min-Feng Hung, Ji-Hong Chiang, Lun-Jyun Chen, Chiang-Hung Chen","doi":"10.1109/INEC.2010.5424704","DOIUrl":"https://doi.org/10.1109/INEC.2010.5424704","url":null,"abstract":"This work demonstrates a novel twin poly-Si thin film transistor (TFT) EEPROM that utilizes oxide for gate dielectric and nitride for electron trapping layer (O/N twin poly-Si EEPROM). This EEPROM has superior reliability because its nitride for electron trapping layer provides a better program/erase efficiency and retention. For endurance and retention, the memory window can be maintained 2.5 V after 103 program and erase (P/E) cycles, and the memory window can be maintained 2.5 V after 104 s at 85 °C. This investigation explores its feasibility in future active matrix liquid crystal display (AMLCD) system-on-panel (SOP) and 3D stacked Flash memory applications.","PeriodicalId":6390,"journal":{"name":"2010 3rd International Nanoelectronics Conference (INEC)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2010-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74557770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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